DK167789B1 - Resonanssensorelement og fremgangsmaade til fremstilling deraf - Google Patents
Resonanssensorelement og fremgangsmaade til fremstilling deraf Download PDFInfo
- Publication number
- DK167789B1 DK167789B1 DK065687A DK65687A DK167789B1 DK 167789 B1 DK167789 B1 DK 167789B1 DK 065687 A DK065687 A DK 065687A DK 65687 A DK65687 A DK 65687A DK 167789 B1 DK167789 B1 DK 167789B1
- Authority
- DK
- Denmark
- Prior art keywords
- sensor element
- resonance sensor
- piezoelectric
- piezoelectric material
- element according
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 150000002611 lead compounds Chemical class 0.000 claims 1
- 239000000615 nonconductor Substances 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 238000004886 process control Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229960001296 zinc oxide Drugs 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910017852 NH2NH2 Inorganic materials 0.000 description 1
- 241001116459 Sequoia Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2473—Double-Ended Tuning Fork [DETF] resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02519—Torsional
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S73/00—Measuring and testing
- Y10S73/04—Piezoelectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49103—Strain gauge making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Radar Systems Or Details Thereof (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Gyroscopes (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/743,255 US4764244A (en) | 1985-06-11 | 1985-06-11 | Resonant sensor and method of making same |
US74325585 | 1985-06-11 | ||
PCT/US1986/001249 WO1986007507A1 (en) | 1985-06-11 | 1986-06-05 | Resonant sensor and method of making same |
US8601249 | 1986-06-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
DK65687D0 DK65687D0 (da) | 1987-02-10 |
DK65687A DK65687A (da) | 1987-04-10 |
DK167789B1 true DK167789B1 (da) | 1993-12-13 |
Family
ID=24988089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK065687A DK167789B1 (da) | 1985-06-11 | 1987-02-10 | Resonanssensorelement og fremgangsmaade til fremstilling deraf |
Country Status (8)
Country | Link |
---|---|
US (1) | US4764244A (ko) |
EP (1) | EP0222012B1 (ko) |
JP (1) | JPS63500068A (ko) |
KR (1) | KR880700542A (ko) |
AU (1) | AU584040B2 (ko) |
DK (1) | DK167789B1 (ko) |
FI (1) | FI870542A0 (ko) |
WO (1) | WO1986007507A1 (ko) |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216490A (en) * | 1988-01-13 | 1993-06-01 | Charles Stark Draper Laboratory, Inc. | Bridge electrodes for microelectromechanical devices |
US5016072A (en) * | 1988-01-13 | 1991-05-14 | The Charles Stark Draper Laboratory, Inc. | Semiconductor chip gyroscopic transducer |
US4906840A (en) * | 1988-01-27 | 1990-03-06 | The Board Of Trustees Of Leland Stanford Jr., University | Integrated scanning tunneling microscope |
GB8806214D0 (en) * | 1988-03-16 | 1988-04-13 | Avery Ltd W & T | Vibrating force sensor |
US4836882A (en) * | 1988-09-12 | 1989-06-06 | The United States Of America As Represented By The Secretary Of The Army | Method of making an acceleration hardened resonator |
US5049775A (en) * | 1988-09-30 | 1991-09-17 | Boston University | Integrated micromechanical piezoelectric motor |
EP0419021A3 (en) * | 1989-08-30 | 1991-10-09 | Schlumberger Industries Limited | Sensors with vibrating elements |
US5034608A (en) * | 1989-09-08 | 1991-07-23 | Massachusetts Institute Of Technology | Infrared sensor operable without cooling |
US5188704A (en) * | 1989-10-20 | 1993-02-23 | International Business Machines Corporation | Selective silicon nitride plasma etching |
US5258868A (en) * | 1990-02-02 | 1993-11-02 | Rosemount Inc. | Optical process variable transmitter |
US5126812A (en) * | 1990-02-14 | 1992-06-30 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical accelerometer |
US5473945A (en) * | 1990-02-14 | 1995-12-12 | The Charles Stark Draper Laboratory, Inc. | Micromechanical angular accelerometer with auxiliary linear accelerometer |
US5966230A (en) * | 1990-05-29 | 1999-10-12 | Symbol Technologies, Inc. | Integrated scanner on a common substrate |
US5625483A (en) * | 1990-05-29 | 1997-04-29 | Symbol Technologies, Inc. | Integrated light source and scanning element implemented on a semiconductor or electro-optical substrate |
US5142912A (en) * | 1990-06-15 | 1992-09-01 | Honeywell Inc. | Semiconductor pressure sensor |
US5165289A (en) * | 1990-07-10 | 1992-11-24 | Johnson Service Company | Resonant mechanical sensor |
US5408119A (en) * | 1990-10-17 | 1995-04-18 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical vibrating string accelerometer with trimmable resonant frequency |
US5605598A (en) * | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
US5162691A (en) * | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
US5129983A (en) * | 1991-02-25 | 1992-07-14 | The Charles Stark Draper Laboratory, Inc. | Method of fabrication of large area micromechanical devices |
US5203208A (en) * | 1991-04-29 | 1993-04-20 | The Charles Stark Draper Laboratory | Symmetrical micromechanical gyroscope |
US5431772A (en) * | 1991-05-09 | 1995-07-11 | International Business Machines Corporation | Selective silicon nitride plasma etching process |
US5331852A (en) * | 1991-09-11 | 1994-07-26 | The Charles Stark Draper Laboratory, Inc. | Electromagnetic rebalanced micromechanical transducer |
US5635639A (en) * | 1991-09-11 | 1997-06-03 | The Charles Stark Draper Laboratory, Inc. | Micromechanical tuning fork angular rate sensor |
US5339051A (en) * | 1991-12-09 | 1994-08-16 | Sandia Corporation | Micro-machined resonator oscillator |
US5198716A (en) * | 1991-12-09 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | Micro-machined resonator |
US5408877A (en) * | 1992-03-16 | 1995-04-25 | The Charles Stark Draper Laboratory, Inc. | Micromechanical gyroscopic transducer with improved drive and sense capabilities |
US5349855A (en) * | 1992-04-07 | 1994-09-27 | The Charles Stark Draper Laboratory, Inc. | Comb drive micromechanical tuning fork gyro |
US5767405A (en) * | 1992-04-07 | 1998-06-16 | The Charles Stark Draper Laboratory, Inc. | Comb-drive micromechanical tuning fork gyroscope with piezoelectric readout |
US5179499A (en) * | 1992-04-14 | 1993-01-12 | Cornell Research Foundation, Inc. | Multi-dimensional precision micro-actuator |
JPH05300765A (ja) * | 1992-04-17 | 1993-11-12 | Seiko Instr Inc | 圧電モータ用振動体の製造方法 |
EP0576400B1 (en) * | 1992-06-24 | 1996-09-04 | Algra Holding Ag | Method of making piezoelectric pressure-sensitive key or keyboard and product of the method |
US5364742A (en) * | 1992-09-21 | 1994-11-15 | International Business Machines Corporation | Micro-miniature structures and method of fabrication thereof |
US5367217A (en) * | 1992-11-18 | 1994-11-22 | Alliedsignal Inc. | Four bar resonating force transducer |
US5650568A (en) * | 1993-02-10 | 1997-07-22 | The Charles Stark Draper Laboratory, Inc. | Gimballed vibrating wheel gyroscope having strain relief features |
WO1994030030A1 (en) * | 1993-06-04 | 1994-12-22 | The Regents Of The University Of California | Microfabricated acoustic source and receiver |
US5728089A (en) * | 1993-06-04 | 1998-03-17 | The Regents Of The University Of California | Microfabricated structure to be used in surgery |
US5511427A (en) * | 1993-07-21 | 1996-04-30 | Honeywell Inc. | Cantilevered microbeam temperature sensor |
US5438231A (en) * | 1993-08-23 | 1995-08-01 | Rockwell International Corporation | Thin film micromechanical resonator gyro |
US5456111A (en) * | 1994-01-24 | 1995-10-10 | Alliedsignal Inc. | Capacitive drive vibrating beam accelerometer |
US5492596A (en) * | 1994-02-04 | 1996-02-20 | The Charles Stark Draper Laboratory, Inc. | Method of making a micromechanical silicon-on-glass tuning fork gyroscope |
US5581035A (en) * | 1994-08-29 | 1996-12-03 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode |
US5646348A (en) * | 1994-08-29 | 1997-07-08 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode and fabrication technique therefor |
US5725729A (en) * | 1994-09-26 | 1998-03-10 | The Charles Stark Draper Laboratory, Inc. | Process for micromechanical fabrication |
US5528409A (en) * | 1994-10-13 | 1996-06-18 | Nt International, Inc. | Fiber-optic interface system |
US5610431A (en) * | 1995-05-12 | 1997-03-11 | The Charles Stark Draper Laboratory, Inc. | Covers for micromechanical sensors and other semiconductor devices |
US5856722A (en) * | 1996-01-02 | 1999-01-05 | Cornell Research Foundation, Inc. | Microelectromechanics-based frequency signature sensor |
US5817942A (en) * | 1996-02-28 | 1998-10-06 | The Charles Stark Draper Laboratory, Inc. | Capacitive in-plane accelerometer |
WO1998001948A1 (en) * | 1996-07-03 | 1998-01-15 | International Business Machines Corporation | Mechanical signal processor comprising means for loss compensation |
US5892153A (en) * | 1996-11-21 | 1999-04-06 | The Charles Stark Draper Laboratory, Inc. | Guard bands which control out-of-plane sensitivities in tuning fork gyroscopes and other sensors |
US5783973A (en) * | 1997-02-24 | 1998-07-21 | The Charles Stark Draper Laboratory, Inc. | Temperature insensitive silicon oscillator and precision voltage reference formed therefrom |
US5911156A (en) * | 1997-02-24 | 1999-06-08 | The Charles Stark Draper Laboratory, Inc. | Split electrode to minimize charge transients, motor amplitude mismatch errors, and sensitivity to vertical translation in tuning fork gyros and other devices |
US6111520A (en) * | 1997-04-18 | 2000-08-29 | Georgia Tech Research Corp. | System and method for the wireless sensing of physical properties |
US5952574A (en) * | 1997-04-29 | 1999-09-14 | The Charles Stark Draper Laboratory, Inc. | Trenches to reduce charging effects and to control out-of-plane sensitivities in tuning fork gyroscopes and other sensors |
US6093330A (en) * | 1997-06-02 | 2000-07-25 | Cornell Research Foundation, Inc. | Microfabrication process for enclosed microstructures |
TW387198B (en) * | 1997-09-03 | 2000-04-11 | Hosiden Corp | Audio sensor and its manufacturing method, and semiconductor electret capacitance microphone using the same |
US6278379B1 (en) * | 1998-04-02 | 2001-08-21 | Georgia Tech Research Corporation | System, method, and sensors for sensing physical properties |
DE19821527A1 (de) * | 1998-05-13 | 1999-12-02 | Siemens Ag | Schwingkreis |
US6180536B1 (en) | 1998-06-04 | 2001-01-30 | Cornell Research Foundation, Inc. | Suspended moving channels and channel actuators for microfluidic applications and method for making |
US6410360B1 (en) * | 1999-01-26 | 2002-06-25 | Teledyne Industries, Inc. | Laminate-based apparatus and method of fabrication |
US7034660B2 (en) * | 1999-02-26 | 2006-04-25 | Sri International | Sensor devices for structural health monitoring |
US6617963B1 (en) | 1999-02-26 | 2003-09-09 | Sri International | Event-recording devices with identification codes |
US6806808B1 (en) | 1999-02-26 | 2004-10-19 | Sri International | Wireless event-recording device with identification codes |
DE19923087B4 (de) | 1999-05-20 | 2004-02-26 | Eads Deutschland Gmbh | Vorrichtung zur Druck-, Schall- und Vibrationsmessung, sowie Verfahren zur Strömungsanalyse an Bauteiloberflächen |
US6444138B1 (en) | 1999-06-16 | 2002-09-03 | James E. Moon | Method of fabricating microelectromechanical and microfluidic devices |
US6445106B1 (en) | 2000-02-18 | 2002-09-03 | Intel Corporation | Micro-electromechanical structure resonator, method of making, and method of using |
DE60037132T2 (de) | 2000-12-21 | 2008-09-11 | Eta Sa Manufacture Horlogère Suisse | Zeitbezug mit einem integrierten mikromechanischen Stimmgabelresonator |
US6787048B2 (en) * | 2001-03-05 | 2004-09-07 | Agilent Technologies, Inc. | Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
US6693020B2 (en) * | 2001-03-12 | 2004-02-17 | Motorola, Inc. | Method of preparing copper metallization die for wirebonding |
WO2002075261A2 (en) * | 2001-03-15 | 2002-09-26 | Molecular Reflection | Method for monitoring the oscillatory characteristics of a microfabricated resonant mass sensor |
FR2824636B1 (fr) * | 2001-05-10 | 2003-09-05 | Schlumberger Services Petrol | Capteur de pression microelectronique a resonateur supportant des pressions elevees |
JP2003004683A (ja) * | 2001-06-15 | 2003-01-08 | Denso Corp | 容量式湿度センサ |
JP3972790B2 (ja) * | 2001-11-27 | 2007-09-05 | 松下電器産業株式会社 | 薄膜微小機械式共振子および薄膜微小機械式共振子ジャイロ |
FR2836239B1 (fr) * | 2002-02-15 | 2004-05-07 | Centre Nat Rech Scient | Amelioration des performances d'un cristal onl |
EP1490699A1 (en) * | 2002-03-26 | 2004-12-29 | The Charles Stark Draper Laboratory, INC. | Microelectromechanical sensors having reduced signal bias errors and methods of manufacturing the same |
US6805809B2 (en) * | 2002-08-28 | 2004-10-19 | Board Of Trustees Of University Of Illinois | Decal transfer microfabrication |
US20040093952A1 (en) * | 2002-11-15 | 2004-05-20 | Spencer Eisenbarth | Electronic pressure transducer |
WO2004049756A1 (en) * | 2002-11-22 | 2004-06-10 | Knowles Electronics, Llc | An apparatus for creating acoustic energy in a balance receiver assembly and manufacturing method thereof |
JP4359757B2 (ja) * | 2003-09-17 | 2009-11-04 | ソニー株式会社 | 情報表示装置 |
US7032454B2 (en) * | 2004-03-05 | 2006-04-25 | Agilent Technologies, Inc. | Piezoelectric cantilever pressure sensor array |
US7662545B2 (en) | 2004-10-14 | 2010-02-16 | The Board Of Trustees Of The University Of Illinois | Decal transfer lithography |
US7790574B2 (en) * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
US7968364B2 (en) * | 2005-10-03 | 2011-06-28 | Analog Devices, Inc. | MEMS switch capping and passivation method |
KR101084447B1 (ko) * | 2006-12-22 | 2011-11-21 | 아나로그 디바이시즈 인코포레이티드 | 스위치 구동 방법 및 장치 |
WO2008149298A1 (en) * | 2007-06-04 | 2008-12-11 | Nxp B.V. | Pressure gauge |
EP2184582A1 (en) * | 2007-08-31 | 2010-05-12 | Rohm Co., Ltd. | Angular velocity signal detection circuit and angular velocity signal detection method |
US20100206073A1 (en) * | 2007-09-25 | 2010-08-19 | Rohm Co., Ltd | Angular velocity detecting device and manufacturing method of the same |
US8187902B2 (en) | 2008-07-09 | 2012-05-29 | The Charles Stark Draper Laboratory, Inc. | High performance sensors and methods for forming the same |
DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
US9243998B2 (en) * | 2011-07-07 | 2016-01-26 | Honeywell International Inc. | Resonant photo acoustic system |
US9038269B2 (en) * | 2013-04-02 | 2015-05-26 | Xerox Corporation | Printhead with nanotips for nanoscale printing and manufacturing |
JP2014212410A (ja) * | 2013-04-18 | 2014-11-13 | セイコーエプソン株式会社 | 振動子、発振器、電子機器、移動体、および振動子の製造方法 |
WO2014200460A1 (en) * | 2013-06-10 | 2014-12-18 | Empire Technology Development Llc | Graded structure films |
JP6245265B2 (ja) * | 2013-09-20 | 2017-12-13 | 株式会社村田製作所 | 振動装置及びその製造方法 |
CN104985241B (zh) * | 2015-05-16 | 2017-04-05 | 哈尔滨工业大学 | 一种基于压电陶瓷片逆压电效应的一维振动装置 |
CN112429699B (zh) * | 2020-10-20 | 2024-04-02 | 北京时代民芯科技有限公司 | 一种硅微悬臂梁谐振器的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3614677A (en) * | 1966-04-29 | 1971-10-19 | Ibm | Electromechanical monolithic resonator |
US4278492A (en) * | 1980-01-21 | 1981-07-14 | Hewlett-Packard Company | Frequency trimming of surface acoustic wave devices |
JPS56136017A (en) * | 1980-03-28 | 1981-10-23 | Clarion Co Ltd | Elastic surface wave device and its manufacture |
US4531267A (en) * | 1982-03-30 | 1985-07-30 | Honeywell Inc. | Method for forming a pressure sensor |
US4502932A (en) * | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
JPS6112214A (ja) * | 1984-06-26 | 1986-01-20 | 井関農機株式会社 | 横送式脱穀装置と結束部との間に設ける穀稈移送装置 |
US4614119A (en) * | 1985-03-08 | 1986-09-30 | The Foxboro Company | Resonant hollow beam and method |
-
1985
- 1985-06-11 US US06/743,255 patent/US4764244A/en not_active Expired - Fee Related
-
1986
- 1986-06-05 EP EP86903988A patent/EP0222012B1/en not_active Expired - Lifetime
- 1986-06-05 KR KR870700114A patent/KR880700542A/ko not_active Application Discontinuation
- 1986-06-05 WO PCT/US1986/001249 patent/WO1986007507A1/en active IP Right Grant
- 1986-06-05 AU AU59932/86A patent/AU584040B2/en not_active Expired - Fee Related
- 1986-06-05 JP JP61503526A patent/JPS63500068A/ja active Pending
-
1987
- 1987-02-10 FI FI870542A patent/FI870542A0/fi not_active IP Right Cessation
- 1987-02-10 DK DK065687A patent/DK167789B1/da active
Also Published As
Publication number | Publication date |
---|---|
DK65687A (da) | 1987-04-10 |
EP0222012B1 (en) | 1991-07-24 |
KR880700542A (ko) | 1988-03-15 |
JPS63500068A (ja) | 1988-01-07 |
US4764244A (en) | 1988-08-16 |
FI870542A (fi) | 1987-02-10 |
AU5993286A (en) | 1987-01-07 |
WO1986007507A1 (en) | 1986-12-18 |
FI870542A0 (fi) | 1987-02-10 |
AU584040B2 (en) | 1989-05-11 |
EP0222012A1 (en) | 1987-05-20 |
DK65687D0 (da) | 1987-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK167789B1 (da) | Resonanssensorelement og fremgangsmaade til fremstilling deraf | |
EP1299946B1 (en) | Filter and method for manufacturing the same | |
US6004832A (en) | Method of fabricating an electrostatic ultrasonic transducer | |
US6307447B1 (en) | Tuning mechanical resonators for electrical filter | |
US7328497B2 (en) | Incremental tuning process for electrical resonators based on mechanical motion | |
US7770279B2 (en) | Electrostatic membranes for sensors, ultrasonic transducers incorporating such membranes, and manufacturing methods therefor | |
US5873153A (en) | Method of making tunable thin film acoustic resonators | |
US8508003B2 (en) | MEMS element and method for manufacturing same | |
US6797631B2 (en) | High sensitive micro-cantilever sensor and fabricating method thereof | |
US7819015B2 (en) | Silicon carbide piezoresistive pressure transducer and method of fabrication | |
EP1155297A1 (en) | Resonant sensor | |
US20070000327A1 (en) | Acoustic wave sensing device integrated with micro-channels and method for the same | |
CN107525610B (zh) | 基于厚度方向激励剪切波模式的fbar微压力传感器 | |
US11863154B2 (en) | Non-linear tethers for suspended devices | |
Yen et al. | Characterization of aluminum nitride Lamb wave resonators operating at 600 C for harsh environment RF applications | |
JP2002372974A (ja) | 薄膜音響共振器及びその製造方法 | |
Rezaei et al. | Challenges in fabrication and testing of piezoelectric MEMS with a particular focus on energy harvesters | |
Midtbo et al. | Fabrication and characterization of CMUTs realized by wafer bonding | |
Fabula et al. | Triple-beam resonant silicon force sensor based on piezoelectric thin films | |
JP6421828B2 (ja) | 圧電デバイスの製造方法 | |
NO870525L (no) | Resonanssensor og fremgangsmaate til fremstilling av samme. | |
CN116391459A (zh) | 包括可变形层和压电层的用于mems应用的复合结构及相关制造方法 | |
CN115513365A (zh) | 一种基于fbar的压力传感器及其制备方法 | |
Beeby | Resonance: Picking up good vibrations | |
Mohammad et al. | Self-aligned maskless process for etching cavities in SOI wafers to enhance the quality factor of MEMS resonators |