DK152385C - Fremgangsmaade til fremstilling af hoejrene halvledermaterialer og rene metaller - Google Patents
Fremgangsmaade til fremstilling af hoejrene halvledermaterialer og rene metallerInfo
- Publication number
- DK152385C DK152385C DK507278A DK507278A DK152385C DK 152385 C DK152385 C DK 152385C DK 507278 A DK507278 A DK 507278A DK 507278 A DK507278 A DK 507278A DK 152385 C DK152385 C DK 152385C
- Authority
- DK
- Denmark
- Prior art keywords
- procedure
- manufacturing
- pure metals
- conductor materials
- conductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2753567 | 1977-12-01 | ||
| DE2753567A DE2753567C3 (de) | 1977-12-01 | 1977-12-01 | Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK507278A DK507278A (da) | 1979-06-02 |
| DK152385B DK152385B (da) | 1988-02-22 |
| DK152385C true DK152385C (da) | 1988-08-01 |
Family
ID=6025086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK507278A DK152385C (da) | 1977-12-01 | 1978-11-15 | Fremgangsmaade til fremstilling af hoejrene halvledermaterialer og rene metaller |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4215154A (de) |
| JP (1) | JPS5820297B2 (de) |
| DE (1) | DE2753567C3 (de) |
| DK (1) | DK152385C (de) |
| IT (1) | IT1106382B (de) |
| NL (1) | NL7811027A (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2928456C2 (de) * | 1979-07-13 | 1983-07-07 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinem Silicium |
| JPS56104795A (en) * | 1980-01-28 | 1981-08-20 | Sony Corp | Device for pulling up crystal |
| DE3319734C2 (de) * | 1983-05-31 | 1994-02-03 | Osaka Titanium | Vorrichtung zur Einspeisung der Heizleistung in polykristalline Halbleiterstäbe |
| JPH0631185B2 (ja) * | 1986-02-06 | 1994-04-27 | 東芝セラミツクス株式会社 | 炭化珪素発熱体の製造方法 |
| US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
| US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
| WO1999031013A1 (en) | 1997-12-15 | 1999-06-24 | Advanced Silicon Materials, Inc. | Chemical vapor deposition system for polycrystalline silicon rod production |
| JP2001274113A (ja) * | 2000-03-23 | 2001-10-05 | Nec Corp | 半導体装置の製造方法 |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
| KR100768148B1 (ko) * | 2006-05-22 | 2007-10-17 | 한국화학연구원 | 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법 |
| DE102008002184A1 (de) * | 2008-06-03 | 2009-12-10 | Wacker Chemie Ag | Vorrichtung zur Umformung elektrischer Energie zur konduktiven Erhitzung von Halbleitermaterial in Stabform |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE570421A (de) * | ||||
| NL113118C (de) * | 1954-05-18 | 1900-01-01 | ||
| NL236697A (de) * | 1958-05-16 | |||
| NL256255A (de) * | 1959-11-02 | |||
| NL7207136A (de) * | 1971-07-07 | 1973-01-09 | ||
| DE2315469C3 (de) * | 1973-03-28 | 1981-08-20 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und Vorrichtung zum Herstellen von hochreinem Halbleitermaterial |
| BE806098A (fr) * | 1973-03-28 | 1974-02-01 | Siemens Ag | Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure |
-
1977
- 1977-12-01 DE DE2753567A patent/DE2753567C3/de not_active Expired
-
1978
- 1978-10-18 JP JP53127442A patent/JPS5820297B2/ja not_active Expired
- 1978-11-06 NL NL7811027A patent/NL7811027A/xx not_active Application Discontinuation
- 1978-11-15 DK DK507278A patent/DK152385C/da active
- 1978-11-24 US US05/963,644 patent/US4215154A/en not_active Expired - Lifetime
- 1978-11-29 IT IT52131/78A patent/IT1106382B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT7852131A0 (it) | 1978-11-29 |
| IT1106382B (it) | 1985-11-11 |
| DK152385B (da) | 1988-02-22 |
| JPS5480284A (en) | 1979-06-26 |
| DE2753567C3 (de) | 1982-04-15 |
| JPS5820297B2 (ja) | 1983-04-22 |
| DK507278A (da) | 1979-06-02 |
| NL7811027A (nl) | 1979-06-06 |
| DE2753567B2 (de) | 1980-08-07 |
| DE2753567A1 (de) | 1979-06-07 |
| US4215154A (en) | 1980-07-29 |
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