DK104470C - Mikrominiaturehalvlederapparat udformet som en enhed. - Google Patents

Mikrominiaturehalvlederapparat udformet som en enhed.

Info

Publication number
DK104470C
DK104470C DK258265AA DK258265A DK104470C DK 104470 C DK104470 C DK 104470C DK 258265A A DK258265A A DK 258265AA DK 258265 A DK258265 A DK 258265A DK 104470 C DK104470 C DK 104470C
Authority
DK
Denmark
Prior art keywords
micro
unit
semiconductor device
device designed
miniature semiconductor
Prior art date
Application number
DK258265AA
Other languages
Danish (da)
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27408060&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK104470(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DK104470C publication Critical patent/DK104470C/da

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/00—
    • H10P14/6309—
    • H10P50/613—
    • H10P76/40—
    • H10P95/00—
    • H10W10/00—
    • H10W10/01—
    • H10W10/031—
    • H10W10/30—
    • H10W20/497—
    • H10W74/43—
    • H10W72/07554—
    • H10W72/536—
    • H10W72/5473—
    • H10W72/5522—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Recrystallisation Techniques (AREA)
  • Thyristors (AREA)
DK258265AA 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat udformet som en enhed. DK104470C (da)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US791602A US3138743A (en) 1959-02-06 1959-02-06 Miniaturized electronic circuits
US792840A US3138747A (en) 1959-02-06 1959-02-12 Integrated semiconductor circuit device
US352380A US3261081A (en) 1959-02-06 1964-03-16 Method of making miniaturized electronic circuits

Publications (1)

Publication Number Publication Date
DK104470C true DK104470C (da) 1966-05-23

Family

ID=27408060

Family Applications (7)

Application Number Title Priority Date Filing Date
DK258265AA DK104470C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat udformet som en enhed.
DK258165AA DK104006C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat.
DK45460AA DK103790C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat og fremgangsmåde til fremstilling af et sådant.
DK258565AA DK104185C (da) 1959-02-06 1960-02-05 Halvlederapparat.
DK258465AA DK104008C (da) 1959-02-06 1960-02-05 Som en enhed udformet mikrominiaturehalvlederkredsløb.
DK258665AA DK104005C (da) 1959-02-06 1960-02-05 Kondensator bestående af en elektrode med et derpå anbragt dielektrisk lag og et oven på det dielektriske lag liggende lag af ledende materiale samt fremgangsmåde til dens fremstilling.
DK258365AA DK104007C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat udformet som en enhed samt fremgangsmåde til fremstilling deraf.

Family Applications After (6)

Application Number Title Priority Date Filing Date
DK258165AA DK104006C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat.
DK45460AA DK103790C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat og fremgangsmåde til fremstilling af et sådant.
DK258565AA DK104185C (da) 1959-02-06 1960-02-05 Halvlederapparat.
DK258465AA DK104008C (da) 1959-02-06 1960-02-05 Som en enhed udformet mikrominiaturehalvlederkredsløb.
DK258665AA DK104005C (da) 1959-02-06 1960-02-05 Kondensator bestående af en elektrode med et derpå anbragt dielektrisk lag og et oven på det dielektriske lag liggende lag af ledende materiale samt fremgangsmåde til dens fremstilling.
DK258365AA DK104007C (da) 1959-02-06 1960-02-05 Mikrominiaturehalvlederapparat udformet som en enhed samt fremgangsmåde til fremstilling deraf.

Country Status (10)

Country Link
US (3) US3138743A (cg-RX-API-DMAC10.html)
JP (1) JPS6155256B1 (cg-RX-API-DMAC10.html)
AT (1) AT247482B (cg-RX-API-DMAC10.html)
CH (8) CH415869A (cg-RX-API-DMAC10.html)
DE (8) DE1196295B (cg-RX-API-DMAC10.html)
DK (7) DK104470C (cg-RX-API-DMAC10.html)
GB (14) GB945741A (cg-RX-API-DMAC10.html)
MY (14) MY6900300A (cg-RX-API-DMAC10.html)
NL (7) NL6608446A (cg-RX-API-DMAC10.html)
SE (1) SE314440B (cg-RX-API-DMAC10.html)

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DE10084887T1 (de) * 1999-08-30 2002-09-12 Inst Biophysics Cn Acad Sci Parallele Platten-Diode
KR100368930B1 (ko) * 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
US7415421B2 (en) * 2003-02-12 2008-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for implementing an engineering change across fab facilities
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US7741971B2 (en) * 2007-04-22 2010-06-22 James Neil Rodgers Split chip
JP2009231891A (ja) * 2008-03-19 2009-10-08 Nec Electronics Corp 半導体装置
US8786355B2 (en) * 2011-11-10 2014-07-22 Qualcomm Incorporated Low-power voltage reference circuit
US9900943B2 (en) 2016-05-23 2018-02-20 On-Bright Electronics (Shanghai) Co., Ltd. Two-terminal integrated circuits with time-varying voltage-current characteristics including phased-locked power supplies
CN105979626B (zh) 2016-05-23 2018-08-24 昂宝电子（上海）有限公司 包括锁相电源的具有时变电压电流特性的双端子集成电路
US10872950B2 (en) 2016-10-04 2020-12-22 Nanohenry Inc. Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors
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Also Published As

Publication number Publication date
MY6900302A (en) 1969-12-31
GB945745A (en) 1964-01-08
GB945742A (cg-RX-API-DMAC10.html)
MY6900287A (en) 1969-12-31
MY6900293A (en) 1969-12-31
DE1196296B (de) 1965-07-08
CH415869A (fr) 1966-06-30
NL6608452A (cg-RX-API-DMAC10.html) 1970-07-23
MY6900283A (en) 1969-12-31
DK104005C (da) 1966-03-21
DE1196299B (de) 1965-07-08
SE314440B (cg-RX-API-DMAC10.html) 1969-09-08
US3138743A (en) 1964-06-23
GB945748A (en) 1964-01-08
NL6608446A (cg-RX-API-DMAC10.html) 1970-07-23
CH416845A (fr) 1966-07-15
MY6900284A (en) 1969-12-31
GB945744A (en) 1964-01-08
GB945743A (en) 1964-01-08
GB945739A (en) 1964-01-08
MY6900301A (en) 1969-12-31
GB945749A (en) 1964-01-08
CH380824A (fr) 1964-08-14
MY6900290A (en) 1969-12-31
NL6608445A (cg-RX-API-DMAC10.html) 1970-07-23
DE1439754B2 (de) 1972-04-13
DE1196297B (de) 1965-07-08
JPS6155256B1 (cg-RX-API-DMAC10.html) 1986-11-27
MY6900296A (en) 1969-12-31
DE1196298B (de) 1965-07-08
AT247482B (de) 1966-06-10
MY6900286A (en) 1969-12-31
DE1196295B (de) 1965-07-08
GB945741A (en) 1964-01-08
MY6900292A (en) 1969-12-31
DK104006C (da) 1966-03-21
NL6608451A (cg-RX-API-DMAC10.html) 1970-07-23
NL134915C (cg-RX-API-DMAC10.html) 1972-04-17
CH415867A (fr) 1966-06-30
DE1196297C2 (de) 1974-01-17
GB945738A (en) 1964-01-08
DK104008C (da) 1966-03-21
CH387799A (fr) 1965-02-15
MY6900315A (en) 1969-12-31
CH410201A (fr) 1966-03-31
GB945746A (en) 1964-01-08
GB945734A (en) 1964-01-08
MY6900285A (en) 1969-12-31
NL6608448A (cg-RX-API-DMAC10.html) 1970-07-23
GB945747A (cg-RX-API-DMAC10.html)
GB945740A (cg-RX-API-DMAC10.html)
DE1196301B (de) 1965-07-08
DK103790C (da) 1966-02-21
DK104007C (da) 1966-03-21
CH415868A (fr) 1966-06-30
US3261081A (en) 1966-07-19
DE1439754A1 (de) 1969-12-04
US3138747A (en) 1964-06-23
GB945737A (en) 1964-01-08
MY6900300A (en) 1969-12-31
DE1196299C2 (de) 1974-03-07
DE1196300B (de) 1965-07-08
CH410194A (fr) 1966-03-31
DK104185C (da) 1966-04-18
MY6900291A (en) 1969-12-31
NL6608447A (cg-RX-API-DMAC10.html) 1970-07-23
NL6608449A (cg-RX-API-DMAC10.html) 1970-07-23

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