DK0501941T3 - Transistorstruktur til brug i sletbare og programmerbare halvlederhukommelsesanordninger - Google Patents

Transistorstruktur til brug i sletbare og programmerbare halvlederhukommelsesanordninger

Info

Publication number
DK0501941T3
DK0501941T3 DK92870016.0T DK92870016T DK0501941T3 DK 0501941 T3 DK0501941 T3 DK 0501941T3 DK 92870016 T DK92870016 T DK 92870016T DK 0501941 T3 DK0501941 T3 DK 0501941T3
Authority
DK
Denmark
Prior art keywords
gate
erasable
semiconductor memory
memory devices
transistor structure
Prior art date
Application number
DK92870016.0T
Other languages
English (en)
Inventor
Houdt Jan Van
Guido Groeseneken
Herman Maes
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of DK0501941T3 publication Critical patent/DK0501941T3/da

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DK92870016.0T 1991-01-31 1992-01-30 Transistorstruktur til brug i sletbare og programmerbare halvlederhukommelsesanordninger DK0501941T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9100091A BE1004424A3 (nl) 1991-01-31 1991-01-31 Transistorstruktuur voor uitwisbare en programmeerbare geheugens.

Publications (1)

Publication Number Publication Date
DK0501941T3 true DK0501941T3 (da) 1997-04-01

Family

ID=3885316

Family Applications (1)

Application Number Title Priority Date Filing Date
DK92870016.0T DK0501941T3 (da) 1991-01-31 1992-01-30 Transistorstruktur til brug i sletbare og programmerbare halvlederhukommelsesanordninger

Country Status (8)

Country Link
EP (2) EP0740306B1 (da)
JP (1) JP3236054B2 (da)
KR (1) KR100280051B1 (da)
AT (2) ATE195034T1 (da)
BE (1) BE1004424A3 (da)
DE (2) DE69214688T2 (da)
DK (1) DK0501941T3 (da)
ES (2) ES2095453T3 (da)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212541A (en) * 1991-04-18 1993-05-18 National Semiconductor Corporation Contactless, 5v, high speed eprom/flash eprom array utilizing cells programmed using source side injection
US6243293B1 (en) 1992-01-29 2001-06-05 Interuniversitair Micro-Elektronica Centrum Contacted cell array configuration for erasable and programmable semiconductor memories
US6009013A (en) * 1992-01-29 1999-12-28 Interuniversitair Micro-Elektronica Centrum Vzw Contactless array configuration for semiconductor memories
EP0762429B1 (en) * 1995-08-11 2002-02-20 Interuniversitair Microelektronica Centrum Vzw Method of programming a flash EEPROM memory cell optimized for low power consumption and a method for erasing said cell
KR100217900B1 (ko) * 1996-04-01 1999-09-01 김영환 플래쉬 메모리 셀의 프로그램 방법
JP2001508910A (ja) * 1996-06-14 2001-07-03 シーメンス アクチエンゲゼルシヤフト 多重レベルの電荷を記憶するためのデバイス及び方法並びに該デバイスの読出しのためのデバイス及び方法
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
RU2481653C2 (ru) * 2009-03-30 2013-05-10 Виктор Николаевич Мурашев Ячейка памяти для быстродействующего эсппзу и способ ее программирования
CN105957806B (zh) * 2016-06-08 2018-05-04 天津大学 用于减少非易失性存储器中数据残留的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958868A (ja) * 1982-09-28 1984-04-04 Nec Corp 半導体不揮発性メモリ
JPS59161873A (ja) * 1983-03-07 1984-09-12 Agency Of Ind Science & Technol 半導体不揮発性メモリ
JPS609168A (ja) * 1983-06-29 1985-01-18 Toshiba Corp 不揮発性半導体メモリ装置
JPS6288368A (ja) * 1985-10-15 1987-04-22 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
JPS6393158A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
DE69231300T2 (de) 2001-03-01
ATE195034T1 (de) 2000-08-15
EP0740306B1 (en) 2000-07-26
ATE144651T1 (de) 1996-11-15
KR100280051B1 (ko) 2001-02-01
ES2095453T3 (es) 1997-02-16
DE69231300D1 (de) 2000-08-31
JP3236054B2 (ja) 2001-12-04
EP0740306A3 (en) 1996-11-13
EP0501941B1 (en) 1996-10-23
EP0740306A2 (en) 1996-10-30
EP0501941A1 (en) 1992-09-02
KR920015561A (ko) 1992-08-27
JPH0582794A (ja) 1993-04-02
DE69214688D1 (de) 1996-11-28
BE1004424A3 (nl) 1992-11-17
DE69214688T2 (de) 1997-04-24
ES2150053T3 (es) 2000-11-16

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