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Priority to TW83106389ApriorityCriticalpatent/TW288207B/en
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A process of fabricating erasable and un-erasable programmable memory cell, which is applicable to split-gate memory cell which comprises of: (1) one substrate with drain and source region, and there forms channel region between the above drain and source region; (2) one gate oxide formed on the above substrate; (3) one floating gate formed on gate oxide on the above channel region and located on the above drain side; (4) one control gate formed on gate oxide on the above channel region and located on the above source side, therewith extending to on the above floating gate; and (5) one gate dielectric formed between the above floating gate and the above control gate; It features that when forming un-erasable programmable memory cell, performing programming from the above source side, and injecting hot electron into the above floating gate to make the above gate oxide trap the above hot electron so as to form un-erasble progammable memory cell.
TW83106389A1994-07-141994-07-14Process of fabricating erasable and un-erasable programmable memory cell
TW288207B
(en)