DE969491C - Halbleiteruebertragungseinrichtung - Google Patents
HalbleiteruebertragungseinrichtungInfo
- Publication number
- DE969491C DE969491C DEW5665A DEW0005665A DE969491C DE 969491 C DE969491 C DE 969491C DE W5665 A DEW5665 A DE W5665A DE W0005665 A DEW0005665 A DE W0005665A DE 969491 C DE969491 C DE 969491C
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- transmission device
- semiconductor body
- cavity
- sheath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 230000005540 biological transmission Effects 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000011324 bead Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 238000005266 casting Methods 0.000 claims description 6
- 229920002367 Polyisobutene Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000002966 varnish Substances 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- 239000011257 shell material Substances 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- -1 Polyethylene Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical compound BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
- Y10T29/49172—Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US198294A US2688110A (en) | 1950-11-30 | 1950-11-30 | Semiconductor translating device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE969491C true DE969491C (de) | 1958-06-12 |
Family
ID=22732771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEW5665A Expired DE969491C (de) | 1950-11-30 | 1951-04-25 | Halbleiteruebertragungseinrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US2688110A (enrdf_load_stackoverflow) |
BE (1) | BE507187A (enrdf_load_stackoverflow) |
CH (1) | CH297595A (enrdf_load_stackoverflow) |
DE (1) | DE969491C (enrdf_load_stackoverflow) |
FR (1) | FR61630E (enrdf_load_stackoverflow) |
GB (1) | GB728223A (enrdf_load_stackoverflow) |
NL (2) | NL82047C (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1146205B (de) * | 1960-02-23 | 1963-03-28 | Siemens Ag | Halbleiteranordnung |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2820983A (en) * | 1951-05-17 | 1958-01-28 | Western Electric Co | Assembly fixture for point contact device |
US2758261A (en) * | 1952-06-02 | 1956-08-07 | Rca Corp | Protection of semiconductor devices |
US2745045A (en) * | 1952-07-19 | 1956-05-08 | Sylvania Electric Prod | Semiconductor devices and methods of fabrication |
NL269213A (enrdf_load_stackoverflow) * | 1953-07-28 | 1900-01-01 | ||
DE1043515B (de) * | 1953-10-01 | 1958-11-13 | Siemens Ag | Verfahren zur Herstellung einer in einem mit Vergussmasse ausgefuellten, vakuumdichtabgeschlossenen Gehaeuse untergebrachten Halbleiteranordnung |
US2850687A (en) * | 1953-10-13 | 1958-09-02 | Rca Corp | Semiconductor devices |
US2725506A (en) * | 1954-01-25 | 1955-11-29 | Clevite Corp | Point contact semiconductor unit |
US2829320A (en) * | 1955-01-12 | 1958-04-01 | Bell Telephone Labor Inc | Encapsulation for electrical components and method of manufacture |
DE1020121B (de) * | 1955-02-19 | 1957-11-28 | Kieler Howaldtswerke Ag | Verfahren zur Herstellung von Halbleitergeraeten kleinster Abmessungen und Vorrichtung zur Ausuebung des Verfahrens |
DE1019766B (de) * | 1955-03-31 | 1957-11-21 | Licentia Gmbh | Isolations- und Korrosionsschutz fuer Gleichrichterplatten |
US2846625A (en) * | 1955-03-31 | 1958-08-05 | Columbia Broadcasting Syst Inc | Semiconductor device |
US2888736A (en) * | 1955-03-31 | 1959-06-02 | Raytheon Mfg Co | Transistor packages |
US2888619A (en) * | 1955-05-20 | 1959-05-26 | John P Hammes | Semiconductor devices |
US2981873A (en) * | 1957-05-02 | 1961-04-25 | Sarkes Tarzian | Semiconductor device |
DE1059571B (de) * | 1957-08-13 | 1959-06-18 | Siemens Ag | Trockengleichrichteranordnung kleiner Bauweise und Verfahren zu ihrer Herstellung |
US3189801A (en) * | 1960-11-04 | 1965-06-15 | Microwave Ass | Point contact semiconductor devices |
US3189799A (en) * | 1961-06-14 | 1965-06-15 | Microwave Ass | Semiconductor devices and method of fabricating them |
US3243670A (en) * | 1963-09-30 | 1966-03-29 | Int Standard Electric Corp | Mountings for semiconductor devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH264445A (de) * | 1947-09-04 | 1949-10-15 | Geyer Karol | Verfahren zur Herstellung von Kristalldioden und Einrichtung zur Durchführung des Verfahrens, sowie nach diesem Verfahren hergestellte Kristalldiode. |
US2486776A (en) * | 1948-04-21 | 1949-11-01 | Bell Telephone Labor Inc | Self-biased electric translating device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2406405A (en) * | 1941-05-19 | 1946-08-27 | Sperry Gyroscope Co Inc | Coaxial condenser crystal and method of making same |
US2432594A (en) * | 1942-08-26 | 1947-12-16 | Union Switch & Signal Co | Rectifying detector for high-frequency alternating electric currents |
NL64085C (enrdf_load_stackoverflow) * | 1943-11-08 | 1900-01-01 | ||
US2468845A (en) * | 1944-11-20 | 1949-05-03 | Union Switch & Signal Co | Alternating electric current rectifier |
US2467811A (en) * | 1945-03-21 | 1949-04-19 | Gen Electric | Rectifier terminal device |
US2475641A (en) * | 1946-10-29 | 1949-07-12 | John Archer Carter | Prompting system |
US2516344A (en) * | 1947-07-18 | 1950-07-25 | Daniel W Ross | Rectifier |
GB674935A (en) * | 1947-10-25 | 1952-07-02 | Distillers Co Yeast Ltd | Drying apparatus and process |
US2606960A (en) * | 1949-06-01 | 1952-08-12 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- BE BE507187D patent/BE507187A/xx unknown
- NL NL7407315.A patent/NL162726B/xx unknown
- NL NL82047D patent/NL82047C/xx active
-
1950
- 1950-11-30 US US198294A patent/US2688110A/en not_active Expired - Lifetime
-
1951
- 1951-04-20 FR FR61630D patent/FR61630E/fr not_active Expired
- 1951-04-25 DE DEW5665A patent/DE969491C/de not_active Expired
- 1951-08-27 CH CH297595D patent/CH297595A/de unknown
- 1951-11-16 GB GB26909/51A patent/GB728223A/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH264445A (de) * | 1947-09-04 | 1949-10-15 | Geyer Karol | Verfahren zur Herstellung von Kristalldioden und Einrichtung zur Durchführung des Verfahrens, sowie nach diesem Verfahren hergestellte Kristalldiode. |
US2486776A (en) * | 1948-04-21 | 1949-11-01 | Bell Telephone Labor Inc | Self-biased electric translating device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1146205B (de) * | 1960-02-23 | 1963-03-28 | Siemens Ag | Halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
BE507187A (enrdf_load_stackoverflow) | |
CH297595A (de) | 1954-03-31 |
US2688110A (en) | 1954-08-31 |
NL162726B (nl) | |
FR61630E (fr) | 1955-05-16 |
GB728223A (en) | 1955-04-13 |
NL82047C (enrdf_load_stackoverflow) |
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