DE878824T1 - Verfahren und Gerät zur Ätzung eines Werkstücks - Google Patents

Verfahren und Gerät zur Ätzung eines Werkstücks

Info

Publication number
DE878824T1
DE878824T1 DE0878824T DE98303196T DE878824T1 DE 878824 T1 DE878824 T1 DE 878824T1 DE 0878824 T DE0878824 T DE 0878824T DE 98303196 T DE98303196 T DE 98303196T DE 878824 T1 DE878824 T1 DE 878824T1
Authority
DE
Germany
Prior art keywords
workpiece
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE0878824T
Other languages
English (en)
Inventor
Andrew Duncan Mcquarrie
Lee Campbell Boman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Surface Technology Systems Ltd
Original Assignee
Surface Technology Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surface Technology Systems Ltd filed Critical Surface Technology Systems Ltd
Publication of DE878824T1 publication Critical patent/DE878824T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
DE0878824T 1997-05-13 1998-04-24 Verfahren und Gerät zur Ätzung eines Werkstücks Pending DE878824T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9709659.8A GB9709659D0 (en) 1997-05-13 1997-05-13 Method and apparatus for etching a workpiece

Publications (1)

Publication Number Publication Date
DE878824T1 true DE878824T1 (de) 1999-05-06

Family

ID=10812209

Family Applications (1)

Application Number Title Priority Date Filing Date
DE0878824T Pending DE878824T1 (de) 1997-05-13 1998-04-24 Verfahren und Gerät zur Ätzung eines Werkstücks

Country Status (6)

Country Link
US (2) US6409876B1 (de)
EP (1) EP0878824A3 (de)
JP (1) JP4047970B2 (de)
KR (1) KR19980086769A (de)
DE (1) DE878824T1 (de)
GB (1) GB9709659D0 (de)

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DE19919471A1 (de) 1999-04-29 2000-11-09 Bosch Gmbh Robert Verfahren zur Beseitigung von Defekten von Siliziumkörpern durch selektive Ätzung
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6960305B2 (en) * 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6736987B1 (en) * 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US6887337B2 (en) * 2000-09-19 2005-05-03 Xactix, Inc. Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto
US6939409B2 (en) * 2000-12-18 2005-09-06 Sumitomo Precision Products Co., Ltd. Cleaning method and etching method
AU2002303842A1 (en) * 2001-05-22 2002-12-03 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US6965468B2 (en) * 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7027200B2 (en) * 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
AU2003275018B2 (en) 2002-09-20 2009-10-01 Integrated Dna Technologies, Inc. Anthraquinone quencher dyes, their methods of preparation and use
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
GB0413554D0 (en) * 2004-06-17 2004-07-21 Point 35 Microstructures Ltd Improved method and apparartus for the etching of microstructures
EP1774538A4 (de) * 2004-07-29 2012-06-06 Omniprobe Inc Multiples gasinjektionssystem für strahlinstrumente geladener teilchen
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20080191153A1 (en) * 2005-03-16 2008-08-14 Advanced Technology Materials, Inc. System For Delivery Of Reagents From Solid Sources Thereof
CN101558477B (zh) * 2005-08-23 2012-05-30 埃克提斯公司 间歇性蚀刻冷却
US8257602B2 (en) * 2005-12-01 2012-09-04 Xactix, Inc. Pulsed-continuous etching
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
CN102747336A (zh) * 2006-04-26 2012-10-24 高级技术材料公司 半导体加工系统的清洁方法和装置
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US8536059B2 (en) 2007-02-20 2013-09-17 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of MEMS
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
CA2694044C (en) 2007-07-25 2017-02-28 Qualcomm Mems Technologies, Inc. Mems display devices and methods of fabricating the same
WO2009028114A1 (ja) * 2007-08-31 2009-03-05 Ulvac, Inc. エッチング装置
JP2009149959A (ja) * 2007-12-21 2009-07-09 Ulvac Japan Ltd エッチング装置、エッチング方法
CN101981661A (zh) 2008-02-11 2011-02-23 高级技术材料公司 在半导体处理系统中离子源的清洗
US8394454B2 (en) 2008-03-08 2013-03-12 Omniprobe, Inc. Method and apparatus for precursor delivery system for irradiation beam instruments
JP5144352B2 (ja) * 2008-04-22 2013-02-13 株式会社アルバック エッチング装置
US8023191B2 (en) * 2008-05-07 2011-09-20 Qualcomm Mems Technologies, Inc. Printable static interferometric images
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
WO2014011292A1 (en) 2012-07-13 2014-01-16 Omniprobe, Inc. Gas injection system for energetic-beam instruments
WO2017189582A1 (en) 2016-04-26 2017-11-02 Active Layer Parametrics, Inc. Methods and systems for material property profiling of thin films
US11289386B2 (en) 2016-04-26 2022-03-29 Active Layer Parametrics, Inc. Methods and apparatus for test pattern forming and film property measurement
WO2024057509A1 (ja) * 2022-09-15 2024-03-21 日本碍子株式会社 ＸｅＦ２ドライエッチングシステム及びプロセス

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US4190488A (en) * 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4478677A (en) * 1983-12-22 1984-10-23 International Business Machines Corporation Laser induced dry etching of vias in glass with non-contact masking
JPS61134019A (ja) * 1984-12-05 1986-06-21 Nec Corp パタ−ン形成方法
WO1991017284A1 (en) * 1990-04-30 1991-11-14 International Business Machines Corporation Apparatus for low temperature cvd of metals
US5198390A (en) 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
US5340437A (en) * 1993-10-08 1994-08-23 Memc Electronic Materials, Inc. Process and apparatus for etching semiconductor wafers
US5726480A (en) 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
EP0729175A1 (de) 1995-02-24 1996-08-28 International Business Machines Corporation Verfahren zur Erzeugung von tiefen und vertikalen Strukturen in Silizium-Substraten
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
JP3417239B2 (ja) * 1997-01-17 2003-06-16 三菱電機株式会社 マイクロエレクトロメカニカルデバイスの作製方法

Also Published As

Publication number Publication date
KR19980086769A (ko) 1998-12-05
JP4047970B2 (ja) 2008-02-13
EP0878824A2 (de) 1998-11-18
GB9709659D0 (en) 1997-07-02
JPH10317169A (ja) 1998-12-02
US6409876B1 (en) 2002-06-25
US20020142599A1 (en) 2002-10-03
EP0878824A3 (de) 2000-01-19

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