DE69942392D1 - Verfahren zur herstellung aufgerauhter platinschichten, und verfahren zur kondensatoren-herstellung, die diese aufgerauhten platinschichten enthalten - Google Patents
Verfahren zur herstellung aufgerauhter platinschichten, und verfahren zur kondensatoren-herstellung, die diese aufgerauhten platinschichten enthaltenInfo
- Publication number
- DE69942392D1 DE69942392D1 DE69942392T DE69942392T DE69942392D1 DE 69942392 D1 DE69942392 D1 DE 69942392D1 DE 69942392 T DE69942392 T DE 69942392T DE 69942392 T DE69942392 T DE 69942392T DE 69942392 D1 DE69942392 D1 DE 69942392D1
- Authority
- DE
- Germany
- Prior art keywords
- platinum
- platinum layers
- substrate
- reaction chamber
- upgrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title abstract 20
- 229910052697 platinum Inorganic materials 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000003990 capacitor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53247—Noble-metal alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/964—Roughened surface
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/141,840 US6583022B1 (en) | 1998-08-27 | 1998-08-27 | Methods of forming roughened layers of platinum and methods of forming capacitors |
PCT/US1999/019814 WO2000013216A1 (en) | 1998-08-27 | 1999-08-27 | Capacitors comprising roughened platinum layers, methods of forming roughened layers of platinum and methods of forming capacitors |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69942392D1 true DE69942392D1 (de) | 2010-07-01 |
Family
ID=22497502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942392T Expired - Lifetime DE69942392D1 (de) | 1998-08-27 | 1999-08-27 | Verfahren zur herstellung aufgerauhter platinschichten, und verfahren zur kondensatoren-herstellung, die diese aufgerauhten platinschichten enthalten |
Country Status (8)
Country | Link |
---|---|
US (3) | US6583022B1 (de) |
EP (1) | EP1108267B1 (de) |
JP (1) | JP3550361B2 (de) |
KR (3) | KR20030078967A (de) |
AT (1) | ATE468603T1 (de) |
AU (1) | AU5589699A (de) |
DE (1) | DE69942392D1 (de) |
WO (1) | WO2000013216A1 (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271131B1 (en) * | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
US7098503B1 (en) | 1998-08-27 | 2006-08-29 | Micron Technology, Inc. | Circuitry and capacitors comprising roughened platinum layers |
US6583022B1 (en) * | 1998-08-27 | 2003-06-24 | Micron Technology, Inc. | Methods of forming roughened layers of platinum and methods of forming capacitors |
US6284655B1 (en) | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
US6239028B1 (en) * | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
US6323081B1 (en) | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
US6204178B1 (en) * | 1998-12-29 | 2001-03-20 | Micron Technology, Inc. | Nucleation and deposition of PT films using ultraviolet irradiation |
US6329286B1 (en) * | 1999-04-27 | 2001-12-11 | Micron Technology, Inc. | Methods for forming conformal iridium layers on substrates |
KR100431820B1 (ko) * | 1999-12-28 | 2004-05-20 | 주식회사 하이닉스반도체 | 반도체소자의 저장전극 형성방법 |
NL1014696C2 (nl) * | 2000-03-20 | 2001-09-28 | Stichting Energie | Vervaardiging van lage-temperatuur brandstofcel elektroden. |
US6429127B1 (en) * | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
US6660631B1 (en) | 2000-08-31 | 2003-12-09 | Micron Technology, Inc. | Devices containing platinum-iridium films and methods of preparing such films and devices |
US6642567B1 (en) * | 2000-08-31 | 2003-11-04 | Micron Technology, Inc. | Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices |
US7217615B1 (en) * | 2000-08-31 | 2007-05-15 | Micron Technology, Inc. | Capacitor fabrication methods including forming a conductive layer |
KR100389120B1 (ko) * | 2000-09-08 | 2003-06-25 | 한국과학기술원 | 자동차 배기가스 정화용 촉매 및 그의 제조방법 |
KR100434489B1 (ko) | 2001-03-22 | 2004-06-05 | 삼성전자주식회사 | 루테늄 산화막 씨딩층을 포함하는 루테늄막 증착 방법 |
US7700454B2 (en) | 2001-07-24 | 2010-04-20 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities |
US6576538B2 (en) * | 2001-08-30 | 2003-06-10 | Micron Technology, Inc. | Technique for high efficiency metalorganic chemical vapor deposition |
US6918960B2 (en) * | 2001-11-28 | 2005-07-19 | Micron Technology, Inc. | CVD of PtRh with good adhesion and morphology |
US6794704B2 (en) * | 2002-01-16 | 2004-09-21 | Micron Technology, Inc. | Method for enhancing electrode surface area in DRAM cell capacitors |
US7105065B2 (en) * | 2002-04-25 | 2006-09-12 | Micron Technology, Inc. | Metal layer forming methods and capacitor electrode forming methods |
US6881260B2 (en) * | 2002-06-25 | 2005-04-19 | Micron Technology, Inc. | Process for direct deposition of ALD RhO2 |
KR100509161B1 (ko) * | 2002-07-11 | 2005-08-23 | 주식회사 성진케미칼 | 도전성 고무패드층 및 폴리이미드층을 구비한 유리섬유 패드 |
US20040036129A1 (en) * | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
WO2004018091A1 (de) * | 2002-08-23 | 2004-03-04 | Hartmut Presting | Mikrostrukturierter katalysatorkörper und verfahren zu dessen herstellung |
US6830983B2 (en) * | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide |
US6861355B2 (en) | 2002-08-29 | 2005-03-01 | Micron Technology, Inc. | Metal plating using seed film |
US6884691B2 (en) * | 2003-03-18 | 2005-04-26 | Micron Technology, Inc. | Method of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms |
US6855647B2 (en) * | 2003-04-02 | 2005-02-15 | Hewlett-Packard Development Company, L.P. | Custom electrodes for molecular memory and logic devices |
US7067454B2 (en) * | 2003-04-09 | 2006-06-27 | Honeywell International Inc. | Low cost quick response catalyst system |
US6737313B1 (en) | 2003-04-16 | 2004-05-18 | Micron Technology, Inc. | Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer |
US6838339B2 (en) * | 2003-06-05 | 2005-01-04 | Infineon Technologies Ag | Area-efficient stack capacitor |
US7440255B2 (en) * | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Capacitor constructions and methods of forming |
US7616757B2 (en) * | 2004-08-30 | 2009-11-10 | Erdman Joseph L | Scalable call center telecommunications system |
US7473637B2 (en) | 2005-07-20 | 2009-01-06 | Micron Technology, Inc. | ALD formed titanium nitride films |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7968488B2 (en) * | 2006-04-18 | 2011-06-28 | Southwest Research Institute | Two-dimensional composite particle adapted for use as a catalyst and method of making same |
US8003521B2 (en) * | 2009-04-07 | 2011-08-23 | Micron Technology, Inc. | Semiconductor processing |
DE102014116141B4 (de) * | 2014-11-05 | 2022-07-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement |
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US3856709A (en) | 1972-04-29 | 1974-12-24 | Getters Spa | Coating a substrate with soft particles |
US3975304A (en) | 1972-05-03 | 1976-08-17 | S.A.E.S. Getters S.P.A. | Coating a substrate with soft particles |
DE3161354D1 (en) | 1980-03-24 | 1983-12-15 | Ytkemiska Inst | A liquid suspension of particles of a metal belonging to the platinum group, and a method for the manufacture of such a suspension |
US4341662A (en) | 1980-04-11 | 1982-07-27 | Pfefferle William C | Method of catalytically coating low porosity ceramic surfaces |
US4431750A (en) | 1982-05-19 | 1984-02-14 | Phillips Petroleum Company | Platinum group metal catalyst on the surface of a support and a process for preparing same |
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US4714693A (en) | 1986-04-03 | 1987-12-22 | Uop Inc. | Method of making a catalyst composition comprising uniform size metal components on carrier |
US5053917A (en) | 1989-08-30 | 1991-10-01 | Nec Corporation | Thin film capacitor and manufacturing method thereof |
US5097843A (en) | 1990-04-10 | 1992-03-24 | Siemens-Pacesetter, Inc. | Porous electrode for a pacemaker |
JP2692402B2 (ja) | 1991-02-26 | 1997-12-17 | 日本電気株式会社 | 半導体素子の製造方法 |
US5525570A (en) | 1991-03-09 | 1996-06-11 | Forschungszentrum Julich Gmbh | Process for producing a catalyst layer on a carrier and a catalyst produced therefrom |
US5208479A (en) | 1992-05-15 | 1993-05-04 | Micron Technology, Inc. | Method of increasing capacitance of polycrystalline silicon devices by surface roughening and polycrystalline silicon devices |
US5320978A (en) * | 1993-07-30 | 1994-06-14 | The United States Of America As Represented By The Secretary Of The Navy | Selective area platinum film deposition |
US6052271A (en) | 1994-01-13 | 2000-04-18 | Rohm Co., Ltd. | Ferroelectric capacitor including an iridium oxide layer in the lower electrode |
US5763286A (en) * | 1994-09-14 | 1998-06-09 | Micron Semiconductor, Inc. | Process for manufacturing a DRAM capacitor having an annularly-grooved, cup-shaped storage-node plate which stores charge on inner and outer surfaces |
US5555486A (en) | 1994-12-29 | 1996-09-10 | North Carolina State University | Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
JP3672115B2 (ja) | 1995-09-19 | 2005-07-13 | 富士通株式会社 | 薄膜形成方法及び半導体装置の製造方法 |
US5874364A (en) | 1995-03-27 | 1999-02-23 | Fujitsu Limited | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
US5783716A (en) | 1996-06-28 | 1998-07-21 | Advanced Technology Materials, Inc. | Platinum source compositions for chemical vapor deposition of platinum |
US5639685A (en) | 1995-10-06 | 1997-06-17 | Micron Technology, Inc. | Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon |
JP3645338B2 (ja) * | 1995-12-11 | 2005-05-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH10189909A (ja) * | 1996-12-27 | 1998-07-21 | Texas Instr Japan Ltd | 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法 |
US6054331A (en) | 1997-01-15 | 2000-04-25 | Tong Yang Cement Corporation | Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate |
US5905280A (en) | 1997-02-11 | 1999-05-18 | Micron Technology, Inc. | Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures |
US5917213A (en) | 1997-08-21 | 1999-06-29 | Micron Technology, Inc. | Depletion compensated polysilicon electrodes |
US6010744A (en) | 1997-12-23 | 2000-01-04 | Advanced Technology Materials, Inc. | Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films |
US6583022B1 (en) * | 1998-08-27 | 2003-06-24 | Micron Technology, Inc. | Methods of forming roughened layers of platinum and methods of forming capacitors |
-
1998
- 1998-08-27 US US09/141,840 patent/US6583022B1/en not_active Expired - Lifetime
-
1999
- 1999-03-30 US US09/281,735 patent/US5990559A/en not_active Expired - Lifetime
- 1999-08-27 AT AT99942541T patent/ATE468603T1/de not_active IP Right Cessation
- 1999-08-27 DE DE69942392T patent/DE69942392D1/de not_active Expired - Lifetime
- 1999-08-27 KR KR10-2003-7012179A patent/KR20030078967A/ko active Search and Examination
- 1999-08-27 WO PCT/US1999/019814 patent/WO2000013216A1/en active IP Right Grant
- 1999-08-27 KR KR10-2003-7012178A patent/KR100451486B1/ko not_active IP Right Cessation
- 1999-08-27 KR KR10-2001-7001364A patent/KR100432177B1/ko not_active IP Right Cessation
- 1999-08-27 AU AU55896/99A patent/AU5589699A/en not_active Abandoned
- 1999-08-27 EP EP99942541A patent/EP1108267B1/de not_active Expired - Lifetime
- 1999-08-27 JP JP2000568109A patent/JP3550361B2/ja not_active Expired - Fee Related
- 1999-09-20 US US09/399,591 patent/US6281161B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002524655A (ja) | 2002-08-06 |
US6583022B1 (en) | 2003-06-24 |
EP1108267B1 (de) | 2010-05-19 |
US5990559A (en) | 1999-11-23 |
ATE468603T1 (de) | 2010-06-15 |
EP1108267A1 (de) | 2001-06-20 |
KR20030083748A (ko) | 2003-10-30 |
JP3550361B2 (ja) | 2004-08-04 |
WO2000013216A1 (en) | 2000-03-09 |
KR20010053624A (ko) | 2001-06-25 |
AU5589699A (en) | 2000-03-21 |
US6281161B1 (en) | 2001-08-28 |
KR100451486B1 (ko) | 2004-10-08 |
KR100432177B1 (ko) | 2004-05-22 |
KR20030078967A (ko) | 2003-10-08 |
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