DE69940757D1 - Halbleiter schaltungsanordnungen und ihre herstellung - Google Patents

Halbleiter schaltungsanordnungen und ihre herstellung

Info

Publication number
DE69940757D1
DE69940757D1 DE69940757T DE69940757T DE69940757D1 DE 69940757 D1 DE69940757 D1 DE 69940757D1 DE 69940757 T DE69940757 T DE 69940757T DE 69940757 T DE69940757 T DE 69940757T DE 69940757 D1 DE69940757 D1 DE 69940757D1
Authority
DE
Germany
Prior art keywords
manufacture
circuit arrangement
semiconductor circuit
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940757T
Other languages
English (en)
Inventor
Holger Schligtenhorst
Godefridus A Hurkx
Andrew M Warwick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE69940757D1 publication Critical patent/DE69940757D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE69940757T 1998-02-28 1999-02-04 Halbleiter schaltungsanordnungen und ihre herstellung Expired - Lifetime DE69940757D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9804177.5A GB9804177D0 (en) 1998-02-28 1998-02-28 Semiconductor switch devices and their manufacture
PCT/IB1999/000202 WO1999046821A2 (en) 1998-02-28 1999-02-04 Semiconductor switch devices and their manufacture

Publications (1)

Publication Number Publication Date
DE69940757D1 true DE69940757D1 (de) 2009-06-04

Family

ID=10827693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940757T Expired - Lifetime DE69940757D1 (de) 1998-02-28 1999-02-04 Halbleiter schaltungsanordnungen und ihre herstellung

Country Status (6)

Country Link
US (1) US6355971B2 (de)
EP (1) EP0979530B1 (de)
JP (1) JP2001523401A (de)
DE (1) DE69940757D1 (de)
GB (1) GB9804177D0 (de)
WO (1) WO1999046821A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792174B2 (ja) 2002-05-02 2006-07-05 株式会社巴川製紙所 光学接続部品
US6660537B1 (en) * 2002-08-15 2003-12-09 National Semiconductor Corporation Method of inducing movement of charge carriers through a semiconductor material
EP2535940B1 (de) * 2011-06-14 2013-08-21 ABB Technology AG Bipolare Diode und Verfahren zur deren Herstellung
DE102011108334B4 (de) * 2011-07-25 2016-05-25 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen
CN111856164B (zh) * 2020-07-28 2023-05-05 哈尔滨工业大学 提取电子器件氧化层中正电荷的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507714A (en) 1967-08-16 1970-04-21 Westinghouse Electric Corp High current single diffused transistor
FR2108781B1 (de) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3710203A (en) 1971-11-05 1973-01-09 Fmc Corp High power storage diode
US4975751A (en) * 1985-09-09 1990-12-04 Harris Corporation High breakdown active device structure with low series resistance
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
EP0632502B1 (de) * 1993-06-28 1999-03-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung
US5548158A (en) * 1994-09-02 1996-08-20 National Semiconductor Corporation Structure of bipolar transistors with improved output current-voltage characteristics
FR2734114B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection sensible de circuit d'interface de lignes d'abonnes

Also Published As

Publication number Publication date
JP2001523401A (ja) 2001-11-20
US6355971B2 (en) 2002-03-12
WO1999046821A2 (en) 1999-09-16
EP0979530A2 (de) 2000-02-16
WO1999046821A3 (en) 1999-11-25
GB9804177D0 (en) 1998-04-22
EP0979530B1 (de) 2009-04-22
US20010054747A1 (en) 2001-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition