DE69936701D1 - Sensormatrixanordnung - Google Patents

Sensormatrixanordnung

Info

Publication number
DE69936701D1
DE69936701D1 DE69936701T DE69936701T DE69936701D1 DE 69936701 D1 DE69936701 D1 DE 69936701D1 DE 69936701 T DE69936701 T DE 69936701T DE 69936701 T DE69936701 T DE 69936701T DE 69936701 D1 DE69936701 D1 DE 69936701D1
Authority
DE
Germany
Prior art keywords
sensor array
array
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69936701T
Other languages
English (en)
Other versions
DE69936701T2 (de
Inventor
Frederick A Perner
Min Cao
Charles M C Tan
Jeremy A Theil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69936701D1 publication Critical patent/DE69936701D1/de
Publication of DE69936701T2 publication Critical patent/DE69936701T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Facsimile Heads (AREA)
DE69936701T 1998-11-02 1999-11-01 Sensormatrixanordnung Expired - Lifetime DE69936701T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US184426 1994-01-21
US09/184,426 US6545711B1 (en) 1998-11-02 1998-11-02 Photo diode pixel sensor array having a guard ring

Publications (2)

Publication Number Publication Date
DE69936701D1 true DE69936701D1 (de) 2007-09-13
DE69936701T2 DE69936701T2 (de) 2008-06-12

Family

ID=22676815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69936701T Expired - Lifetime DE69936701T2 (de) 1998-11-02 1999-11-01 Sensormatrixanordnung

Country Status (4)

Country Link
US (1) US6545711B1 (de)
EP (1) EP0999596B1 (de)
JP (1) JP2000138363A (de)
DE (1) DE69936701T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000131444A (ja) * 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
US6928144B2 (en) * 2003-08-01 2005-08-09 General Electric Company Guard ring for direct photo-to-electron conversion detector array
US7414653B2 (en) * 2003-12-19 2008-08-19 Micron Technology, Inc. Dark reduction via feedback control of photodiode bias
US7528420B2 (en) * 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same
US8753917B2 (en) * 2010-12-14 2014-06-17 International Business Machines Corporation Method of fabricating photoconductor-on-active pixel device
EP3502957B1 (de) * 2017-12-21 2021-07-21 Fingerprint Cards AB Fingerabdruckerfassungsvorrichtung mit kantenkompensierender struktur

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6149569A (ja) * 1984-08-17 1986-03-11 Matsushita Electronics Corp 固体撮像装置
JP2509592B2 (ja) * 1986-12-26 1996-06-19 株式会社東芝 積層型固体撮像装置
US5497146A (en) * 1992-06-03 1996-03-05 Frontec, Incorporated Matrix wiring substrates
US5535084A (en) * 1992-07-24 1996-07-09 Kawasaki Steel Corporation Semiconductor integrated circuit having protection circuits
GB9226890D0 (en) * 1992-12-23 1993-02-17 Philips Electronics Uk Ltd An imaging device
JPH06291294A (ja) * 1993-03-31 1994-10-18 Toshiba Corp 固体撮像装置
JP2601143B2 (ja) * 1993-06-17 1997-04-16 日本電気株式会社 半導体装置
US5751049A (en) * 1993-08-16 1998-05-12 Texas Instruments Incorporated Two-color infrared detector
JPH08195442A (ja) * 1995-01-17 1996-07-30 Sony Corp 半導体集積回路の保護回路
US5627850A (en) * 1995-03-20 1997-05-06 Paradigm Lasers, Inc. Laser diode array
WO1997005654A1 (en) * 1995-07-31 1997-02-13 Litton Systems Canada Limited Semiconductor switch array with electrostatic discharge protection and method of fabricating
US5736732A (en) * 1996-12-23 1998-04-07 General Electric Company Induced charge prevention in semiconductor imaging devices
KR100240872B1 (ko) * 1997-02-17 2000-01-15 윤종용 정전기 방전 보호 회로 및 그것을 구비하는 집적 회로
US5859450A (en) * 1997-09-30 1999-01-12 Intel Corporation Dark current reducing guard ring
US6060763A (en) * 1997-11-14 2000-05-09 Nec Corporation Semiconductor device and method for producing same
US6096618A (en) * 1998-01-20 2000-08-01 International Business Machines Corporation Method of making a Schottky diode with sub-minimum guard ring
US6229192B1 (en) * 1998-01-27 2001-05-08 Ois Optical Imaging Systems, Inc. Image sensor or LCD including switching pin diodes
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure

Also Published As

Publication number Publication date
EP0999596A2 (de) 2000-05-10
JP2000138363A (ja) 2000-05-16
US6545711B1 (en) 2003-04-08
EP0999596A3 (de) 2001-05-09
DE69936701T2 (de) 2008-06-12
EP0999596B1 (de) 2007-08-01

Similar Documents

Publication Publication Date Title
DE69912887D1 (de) Sensor
DE59811545D1 (de) Messaufnehmer
DE69938221D1 (de) Positionssensor
DE69917403T8 (de) Glukose-sensor
DE59812495D1 (de) Winkelsensor
DE59914644D1 (de) Optischer Sensor
DE59911604D1 (de) Optischer sensor
DE59712724D1 (de) Füllstandsgeber
BR9608046A (pt) Sensor
DE59909301D1 (de) Optischer sensor
DE69934776D1 (de) Positionssensor
DE69835247D1 (de) Verbesserte Sensoranordnungen
NO20005270D0 (no) Elektrokjemisk føler
DE60033722D1 (de) Bildsensoranordnung
DE50015835D1 (de) Sensor
DE59814373D1 (de) Füllstandssensor
DE69939508D1 (de) Optischer Sensor
DE19983808T1 (de) Differenz-VGMR-Sensor
DE59809734D1 (de) Wegsensor
DE59906220D1 (de) Weg-Winkel-Sensor
DE59712865D1 (de) Sensoranordnung
DE69824398D1 (de) Photodiodenanordnung
DE19815150B4 (de) Sensoranordnung
DE59812166D1 (de) Winkelsensor
NO991000D0 (no) Sensorelement

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, US

8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC., BOISE, ID., US

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: APTINA IMAGING CORP., GRAND CAYMAN, CAYMAN ISL, KY