DE69923900D1 - Architektur einer Speicherschaltung - Google Patents
Architektur einer SpeicherschaltungInfo
- Publication number
- DE69923900D1 DE69923900D1 DE69923900T DE69923900T DE69923900D1 DE 69923900 D1 DE69923900 D1 DE 69923900D1 DE 69923900 T DE69923900 T DE 69923900T DE 69923900 T DE69923900 T DE 69923900T DE 69923900 D1 DE69923900 D1 DE 69923900D1
- Authority
- DE
- Germany
- Prior art keywords
- architecture
- memory circuit
- memory
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9811715A FR2784219B1 (fr) | 1998-09-16 | 1998-09-16 | Architecture de circuit memoire |
FR9811715 | 1998-09-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69923900D1 true DE69923900D1 (de) | 2005-04-07 |
DE69923900T2 DE69923900T2 (de) | 2006-04-06 |
Family
ID=9530620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69923900T Expired - Fee Related DE69923900T2 (de) | 1998-09-16 | 1999-09-14 | Architektur für eine Speicherschaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6373741B2 (de) |
EP (1) | EP0987713B1 (de) |
DE (1) | DE69923900T2 (de) |
FR (1) | FR2784219B1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL155102A0 (en) * | 2000-10-03 | 2003-10-31 | Penwest Pharmaceuticals Co | Delivery system for multi-pharmaceutical active materials at various release rates |
US6944056B2 (en) * | 2001-04-02 | 2005-09-13 | Renesas Technology Corp. | Semiconductor non-volatile storage device |
US6687147B2 (en) | 2002-04-02 | 2004-02-03 | Hewlett-Packard Development Company, L.P. | Cubic memory array with diagonal select lines |
US7505321B2 (en) * | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
TWI295805B (en) * | 2005-04-26 | 2008-04-11 | Via Tech Inc | Memory circuit and related method for integrating pre-decode and selective pre-charge |
JP4909619B2 (ja) * | 2006-04-13 | 2012-04-04 | パナソニック株式会社 | 半導体記憶装置 |
KR100857743B1 (ko) * | 2007-02-06 | 2008-09-10 | 삼성전자주식회사 | 반도체 메모리 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0772991B2 (ja) * | 1988-12-06 | 1995-08-02 | 三菱電機株式会社 | 半導体記憶装置 |
JPH07130163A (ja) * | 1993-11-01 | 1995-05-19 | Matsushita Electron Corp | 半導体メモリ |
JPH09161476A (ja) * | 1995-10-04 | 1997-06-20 | Toshiba Corp | 半導体メモリ及びそのテスト回路、並びにデ−タ転送システム |
JP3291206B2 (ja) * | 1996-09-17 | 2002-06-10 | 富士通株式会社 | 半導体記憶装置 |
US5781488A (en) * | 1997-04-18 | 1998-07-14 | Mosel Vitelic Corporation | DRAM with new I/O data path configuration |
US5949732A (en) * | 1997-09-11 | 1999-09-07 | International Business Machines Corporation | Method of structuring a multi-bank DRAM into a hierarchical column select line architecture |
US5940329A (en) * | 1997-12-17 | 1999-08-17 | Silicon Aquarius, Inc. | Memory architecture and systems and methods using the same |
-
1998
- 1998-09-16 FR FR9811715A patent/FR2784219B1/fr not_active Expired - Fee Related
-
1999
- 1999-09-14 DE DE69923900T patent/DE69923900T2/de not_active Expired - Fee Related
- 1999-09-14 EP EP99410112A patent/EP0987713B1/de not_active Expired - Lifetime
- 1999-09-15 US US09/396,617 patent/US6373741B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0987713B1 (de) | 2005-03-02 |
DE69923900T2 (de) | 2006-04-06 |
FR2784219B1 (fr) | 2001-11-02 |
EP0987713A1 (de) | 2000-03-22 |
US6373741B2 (en) | 2002-04-16 |
US20020018391A1 (en) | 2002-02-14 |
FR2784219A1 (fr) | 2000-04-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |