DE69922816D1 - Oberflächenbehandlung mittels physikalischer dampfabscheidung mit kompensierung der ungleichförmigkeit - Google Patents

Oberflächenbehandlung mittels physikalischer dampfabscheidung mit kompensierung der ungleichförmigkeit

Info

Publication number
DE69922816D1
DE69922816D1 DE69922816T DE69922816T DE69922816D1 DE 69922816 D1 DE69922816 D1 DE 69922816D1 DE 69922816 T DE69922816 T DE 69922816T DE 69922816 T DE69922816 T DE 69922816T DE 69922816 D1 DE69922816 D1 DE 69922816D1
Authority
DE
Germany
Prior art keywords
inequality
compensation
surface treatment
physical steam
disposal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69922816T
Other languages
English (en)
Other versions
DE69922816T2 (de
Inventor
J Licata
D Di Hurwitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69922816D1 publication Critical patent/DE69922816D1/de
Publication of DE69922816T2 publication Critical patent/DE69922816T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Drying Of Semiconductors (AREA)
DE69922816T 1998-07-20 1999-07-20 Oberflächenbehandlung mittels physikalischer dampfabscheidung mit kompensierung der ungleichförmigkeit Expired - Fee Related DE69922816T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US119291 1998-07-20
US09/119,291 US6224724B1 (en) 1995-02-23 1998-07-20 Physical vapor processing of a surface with non-uniformity compensation
PCT/US1999/012378 WO2000005745A1 (en) 1998-07-20 1999-07-20 Physical vapor processing of a surface with non-uniformity compensation

Publications (2)

Publication Number Publication Date
DE69922816D1 true DE69922816D1 (de) 2005-01-27
DE69922816T2 DE69922816T2 (de) 2005-12-01

Family

ID=22383595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69922816T Expired - Fee Related DE69922816T2 (de) 1998-07-20 1999-07-20 Oberflächenbehandlung mittels physikalischer dampfabscheidung mit kompensierung der ungleichförmigkeit

Country Status (7)

Country Link
US (1) US6224724B1 (de)
EP (1) EP1114436B1 (de)
JP (1) JP3737363B2 (de)
KR (1) KR100455494B1 (de)
DE (1) DE69922816T2 (de)
TW (1) TW476801B (de)
WO (1) WO2000005745A1 (de)

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US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6466881B1 (en) * 1999-04-22 2002-10-15 Applied Materials Inc. Method for monitoring the quality of a protective coating in a reactor chamber
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
TW552624B (en) 2001-05-04 2003-09-11 Tokyo Electron Ltd Ionized PVD with sequential deposition and etching
US7744735B2 (en) 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US6584416B2 (en) * 2001-08-16 2003-06-24 Hewlett-Packard Development Company System and methods for forming data storage devices
US7041201B2 (en) 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
FR325790A (fr) 2002-03-28 1903-05-08 Kempshall Eleazer Balle perfectionnée pour le jeu de golf
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6797440B2 (en) * 2002-08-06 2004-09-28 Freescale Semiconductor, Inc. Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device
US7556718B2 (en) * 2004-06-22 2009-07-07 Tokyo Electron Limited Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer
DE102007009615A1 (de) * 2007-02-26 2008-08-28 Leybold Optics Gmbh Anlage und Verfahren zur Vakuumbehandlung von bandförmigen Substraten
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
CN103202105B (zh) * 2010-09-10 2015-11-25 Emd株式会社 等离子处理装置
US10669625B2 (en) * 2013-03-15 2020-06-02 Taiwan Semiconductor Manufacturing Company Limited Pumping liner for chemical vapor deposition
KR20140137734A (ko) * 2013-05-23 2014-12-03 삼성디스플레이 주식회사 반사형 편광판 제조방법 및 인셀 반사형 편광판 제조방법
DE102013011068A1 (de) 2013-07-03 2015-01-08 Oerlikon Trading Ag, Trübbach Targetalter-Kompensationsverfahren zur Durchführung von stabilen reaktiven Sputterverfahren
SG11201709089YA (en) * 2015-05-22 2017-12-28 Ulvac Inc Magnetron sputtering apparatus
KR20210144932A (ko) 2019-04-22 2021-11-30 어플라이드 머티어리얼스, 인코포레이티드 가스 유동 시스템
CN113737143A (zh) * 2021-08-24 2021-12-03 北海惠科半导体科技有限公司 磁控溅射装置

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US4464223A (en) 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
JPS61190070A (ja) 1985-02-20 1986-08-23 Hitachi Ltd スパツタ装置
JPS61246368A (ja) 1985-04-24 1986-11-01 Nec Corp 金属膜の堆積方法
US4657619A (en) 1985-11-29 1987-04-14 Donnell Kevin P O Diverter magnet arrangement for plasma processing system
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US4871433A (en) 1986-04-04 1989-10-03 Materials Research Corporation Method and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system
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Also Published As

Publication number Publication date
US6224724B1 (en) 2001-05-01
KR100455494B1 (ko) 2004-11-06
WO2000005745A8 (en) 2000-03-30
TW476801B (en) 2002-02-21
EP1114436B1 (de) 2004-12-22
DE69922816T2 (de) 2005-12-01
JP2002521567A (ja) 2002-07-16
EP1114436A2 (de) 2001-07-11
KR20010099597A (ko) 2001-11-09
JP3737363B2 (ja) 2006-01-18
WO2000005745A1 (en) 2000-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee