DE69906541D1 - Mosfet-schalter mit geringer ladungsinjektion - Google Patents

Mosfet-schalter mit geringer ladungsinjektion

Info

Publication number
DE69906541D1
DE69906541D1 DE69906541T DE69906541T DE69906541D1 DE 69906541 D1 DE69906541 D1 DE 69906541D1 DE 69906541 T DE69906541 T DE 69906541T DE 69906541 T DE69906541 T DE 69906541T DE 69906541 D1 DE69906541 D1 DE 69906541D1
Authority
DE
Germany
Prior art keywords
charge injection
low charge
mosfet switch
mosfet
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69906541T
Other languages
English (en)
Other versions
DE69906541T2 (de
Inventor
Russell Hale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Credence Systems Corp
Original Assignee
Credence Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Credence Systems Corp filed Critical Credence Systems Corp
Publication of DE69906541D1 publication Critical patent/DE69906541D1/de
Application granted granted Critical
Publication of DE69906541T2 publication Critical patent/DE69906541T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163Soft switching
DE69906541T 1998-07-30 1999-07-21 Mosfet-schalter mit geringer ladungsinjektion Expired - Fee Related DE69906541T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/126,696 US6005433A (en) 1998-07-30 1998-07-30 Low charge injection mosfet switch
PCT/US1999/016806 WO2000007299A1 (en) 1998-07-30 1999-07-21 Low charge injection mosfet switch

Publications (2)

Publication Number Publication Date
DE69906541D1 true DE69906541D1 (de) 2003-05-08
DE69906541T2 DE69906541T2 (de) 2003-11-06

Family

ID=22426237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69906541T Expired - Fee Related DE69906541T2 (de) 1998-07-30 1999-07-21 Mosfet-schalter mit geringer ladungsinjektion

Country Status (6)

Country Link
US (1) US6005433A (de)
EP (1) EP1101287B1 (de)
JP (1) JP2002521953A (de)
KR (1) KR20010053074A (de)
DE (1) DE69906541T2 (de)
WO (1) WO2000007299A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19836361C1 (de) * 1998-08-11 2000-03-30 Siemens Ag Verfahren zur Leckstromprüfung einer Kontaktierungsstelle einer integrierten Schaltung
US6842053B1 (en) * 1998-11-09 2005-01-11 Agere Systems Inc. Reduced charge injection in current switch
US6316933B1 (en) 1999-08-26 2001-11-13 Broadcom Corporation Test bus circuit and associated method
EP1199801A1 (de) * 2000-10-19 2002-04-24 STMicroelectronics S.r.l. Schaltung zur injektionsstromsteuerung in Analogschaltern
WO2002042783A2 (en) * 2000-11-22 2002-05-30 Ecole De Technologie Superieure Vddq INTEGRATED CIRCUIT TESTING SYSTEM AND METHOD
JP5706251B2 (ja) * 2011-06-30 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
US10277223B2 (en) 2016-12-06 2019-04-30 Analog Devices Global Charge injection compensation circuit
US10733391B1 (en) 2019-03-08 2020-08-04 Analog Devices International Unlimited Company Switching scheme for low offset switched-capacitor integrators

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471245A (en) * 1982-06-21 1984-09-11 Eaton Corporation FET Gating circuit with fast turn-on capacitor
JPS6146613A (ja) * 1984-08-10 1986-03-06 Nec Corp レベル検出回路
US4857770A (en) * 1988-02-29 1989-08-15 Advanced Micro Devices, Inc. Output buffer arrangement for reducing chip noise without speed penalty
JP2797338B2 (ja) * 1988-10-11 1998-09-17 松下電器産業株式会社 ゲートドライブ回路
US4890010A (en) * 1988-12-22 1989-12-26 Ncr Corporation Matched current source serial bus driver
US4885597A (en) * 1988-12-27 1989-12-05 Eastman Kodak Company Non-impact printer apparatus with improved current mirror driver and method of printing
WO1991018338A1 (en) * 1990-05-17 1991-11-28 International Business Machines Corporation Switchable current source
WO1993019490A1 (en) * 1992-03-23 1993-09-30 Rohm Co., Ltd. Voltage regulating diode
US5430401A (en) * 1992-08-27 1995-07-04 Northern Telecom Ltd. Electronic switches
JPH06196746A (ja) * 1992-12-25 1994-07-15 Canon Inc 光電変換装置、駆動回路、半導体発光素子駆動回路、記憶装置、及びシーケンシャルアクセスメモリー
KR0123849B1 (ko) * 1994-04-08 1997-11-25 문정환 반도체 디바이스의 내부 전압발생기
US5552744A (en) * 1994-08-11 1996-09-03 Ltx Corporation High speed IDDQ monitor circuit
US5701133A (en) * 1994-10-13 1997-12-23 Lucent Technologies Inc. Cascaded multiplying current mirror driver for LED's
US5517143A (en) * 1994-11-29 1996-05-14 Linear Technology Corporation Current mirror circuits and methods with guaranteed off state and amplifier circuits using same
FR2733097B1 (fr) * 1995-04-13 1997-07-04 Valeo Equip Electr Moteur Circuit d'excitation d'alternateur notamment de vehicule automobile, et regulateur et alternateur l'incorporant
JPH10132601A (ja) * 1996-10-29 1998-05-22 Fuji Koki Corp 信号電圧−電流変換回路
US5905412A (en) * 1997-05-21 1999-05-18 National Semiconductor Corporation Process compensation method for CMOS current controlled ring oscillators

Also Published As

Publication number Publication date
WO2000007299A1 (en) 2000-02-10
EP1101287A4 (de) 2001-09-12
EP1101287B1 (de) 2003-04-02
EP1101287A1 (de) 2001-05-23
JP2002521953A (ja) 2002-07-16
US6005433A (en) 1999-12-21
DE69906541T2 (de) 2003-11-06
KR20010053074A (ko) 2001-06-25

Similar Documents

Publication Publication Date Title
DE60125784D1 (de) Graben-mosfet-struktur mit geringer gate-ladung
DE69822160D1 (de) Verbesserte injektionsspritze
DE69913459D1 (de) Injektionsvorrichtung
DE59910742D1 (de) Brennstoffeinspritzanlage
DE69910363D1 (de) Brennstoffeinspritzung
DE69819300D1 (de) Fussmatte mit angeformter tür
DE69703568T2 (de) Spannungsregelungsvorrichtung mit geringer interner Verlustleistung
DE19882020D2 (de) Thermo-optischer Schalter mit seitlich versetzten Element
DE59904243D1 (de) Spritzgiessmaschine
DE69708222T2 (de) Hochspannungsschalter mit Selbstbeblasung
DE69829540D1 (de) Spritzgiessvorrichtung
DE69906541T2 (de) Mosfet-schalter mit geringer ladungsinjektion
DE59706917D1 (de) Spritzgiessvorrichtung
DE69709333T2 (de) Spritzgiessverfahren
FR2787145B1 (fr) Circuit d'injection perfectionne
AT2958U3 (de) Einspritzsystem
DE69908772D1 (de) Geraet mit kontextumschaltungsfaehigkeit
DE69726707D1 (de) Spritzgiessvorrichtung
DE69900913T2 (de) Bleibatterie mit verbesserter leistung
DE69817278D1 (de) Spritzgiessgefertigte kühlschrankinnenverkleidung
DE60012959D1 (de) Polycarbonatmischungen mit verbesserter fliessfähigkeit
DE69906868T2 (de) Kraftstoffeinspritzung
NO970576D0 (no) Selvdestruerende injeksjonsspröyte
DE59903782D1 (de) Kraftstoffeinspritzsystem
DE59907743D1 (de) Kraftstoffeinspritzsystem

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee