DE69904912T2 - Unterschwingungsfester Busschalter - Google Patents
Unterschwingungsfester BusschalterInfo
- Publication number
- DE69904912T2 DE69904912T2 DE69904912T DE69904912T DE69904912T2 DE 69904912 T2 DE69904912 T2 DE 69904912T2 DE 69904912 T DE69904912 T DE 69904912T DE 69904912 T DE69904912 T DE 69904912T DE 69904912 T2 DE69904912 T2 DE 69904912T2
- Authority
- DE
- Germany
- Prior art keywords
- vibration
- bus switch
- bus
- switch
- vibration bus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/219,403 US5963080A (en) | 1998-12-23 | 1998-12-23 | Undershoot hardened FET switch |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69904912D1 DE69904912D1 (de) | 2003-02-20 |
DE69904912T2 true DE69904912T2 (de) | 2003-10-09 |
Family
ID=22819130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69904912T Expired - Lifetime DE69904912T2 (de) | 1998-12-23 | 1999-10-21 | Unterschwingungsfester Busschalter |
Country Status (4)
Country | Link |
---|---|
US (1) | US5963080A (de) |
EP (1) | EP1043838B1 (de) |
KR (1) | KR100351530B1 (de) |
DE (1) | DE69904912T2 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3258930B2 (ja) * | 1997-04-24 | 2002-02-18 | 東芝マイクロエレクトロニクス株式会社 | トランスミッション・ゲート |
US6052019A (en) * | 1998-10-29 | 2000-04-18 | Pericom Semiconductor Corp. | Undershoot-isolating MOS bus switch |
US5963080A (en) * | 1998-12-23 | 1999-10-05 | Fairchild Semiconductor Corporation | Undershoot hardened FET switch |
US6163199A (en) * | 1999-01-29 | 2000-12-19 | Fairchild Semiconductor Corp. | Overvoltage/undervoltage tolerant transfer gate |
JP2001051730A (ja) * | 1999-08-05 | 2001-02-23 | Fujitsu Ltd | スイッチ回路及びシリーズレギュレータ |
US6236259B1 (en) * | 1999-10-04 | 2001-05-22 | Fairchild Semiconductor Corporation | Active undershoot hardened fet switch |
JP2001186007A (ja) * | 1999-12-24 | 2001-07-06 | Sharp Corp | 金属酸化膜半導体トランジスタ回路およびそれを用いた半導体集積回路 |
US6559703B1 (en) | 2000-06-29 | 2003-05-06 | Pericom Semiconductor Corp. | Bi-directional undershoot-isolating bus switch with directional control |
US6433613B1 (en) * | 2000-12-15 | 2002-08-13 | Fairchild Semiconductor Corporation | Translating switch circuit with disabling option |
US6320408B1 (en) | 2001-03-02 | 2001-11-20 | Pericom Semiconductor Corp. | Dual-sided undershoot-isolating bus switch |
US7145378B2 (en) * | 2001-07-16 | 2006-12-05 | Fairchild Semiconductor Corporation | Configurable switch with selectable level shifting |
US6670829B1 (en) * | 2002-07-19 | 2003-12-30 | Pericom Semiconductor Corp. | Isolating circuit for P/N transmission gate during hot-plug insertion |
US7291896B2 (en) * | 2004-06-24 | 2007-11-06 | Rajendran Nair | Voltage droop suppressing active interposer |
US7242226B1 (en) * | 2004-08-03 | 2007-07-10 | Cisco Technology, Inc. | Method and apparatus for avoiding false switching in an electronic device |
US7119601B2 (en) * | 2004-08-04 | 2006-10-10 | Texas Instruments Incorporated | Backgate pull-up for PMOS pass-gates |
US7030659B2 (en) * | 2004-08-24 | 2006-04-18 | Texas Instruments Incorporated | Signal switch with reduced on resistance and undershoot protection |
US7667525B2 (en) * | 2005-04-06 | 2010-02-23 | Texas Instruments Incorporated | Bus switch circuit with back-gate control during power down |
CN100359502C (zh) * | 2005-07-21 | 2008-01-02 | 深圳创维-Rgb电子有限公司 | 混合逻辑电平双向总线转换器及连接方法 |
US7649400B2 (en) * | 2005-09-28 | 2010-01-19 | Texas Instruments Incorporated | Back gate biasing overshoot and undershoot protection circuitry |
DE102006058169A1 (de) * | 2006-12-09 | 2008-06-19 | Atmel Germany Gmbh | Integrierter Halbleiterschaltkreis |
US7514983B2 (en) * | 2007-03-23 | 2009-04-07 | Fairchild Semiconductor Corporation | Over-voltage tolerant pass-gate |
US7782116B2 (en) * | 2008-09-05 | 2010-08-24 | Fairchild Semiconductor Corporation | Power supply insensitive voltage level translator |
EP2293446B1 (de) | 2009-09-03 | 2011-11-09 | Austriamicrosystems AG | Koppelkreis, Treiberschaltung und Verfahren zur Steuerung eines Koppelkreises |
FR2951320B1 (fr) * | 2009-10-08 | 2011-12-30 | Vehicules Electr Soc D | Batterie electrique comprenant une pluralite d'elements generateurs d'energie electrique |
US20120056661A1 (en) * | 2010-09-08 | 2012-03-08 | Ayman Shabra | High voltage multiplexer element and multiplexer system using same |
US8614599B1 (en) * | 2010-12-08 | 2013-12-24 | Xilinx, Inc. | Method and apparatus for powering down a dual supply current source |
US9130553B2 (en) | 2012-10-04 | 2015-09-08 | Nxp B.V. | Low/high voltage selector |
TW202025635A (zh) * | 2018-12-26 | 2020-07-01 | 新唐科技股份有限公司 | 電晶體開關電路 |
US11296716B1 (en) * | 2020-12-04 | 2022-04-05 | Nxp Usa, Inc. | Analog multiplexer with current injection protection |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2171307C (en) * | 1993-09-16 | 2004-11-23 | Zwie Amitai | Scan test circuit using fast transmission gate switch |
US5751168A (en) * | 1995-04-28 | 1998-05-12 | Texas Instruments Incorporated | Bus switch integrated circuit with voltage translation |
US5808502A (en) * | 1995-06-05 | 1998-09-15 | Hewlett-Packard Co. | Parallel micro-relay bus switch for computer network communication with reduced crosstalk and low on-resistance using charge pumps |
US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
US5963080A (en) * | 1998-12-23 | 1999-10-05 | Fairchild Semiconductor Corporation | Undershoot hardened FET switch |
-
1998
- 1998-12-23 US US09/219,403 patent/US5963080A/en not_active Expired - Lifetime
-
1999
- 1999-10-21 EP EP99650096A patent/EP1043838B1/de not_active Expired - Lifetime
- 1999-10-21 DE DE69904912T patent/DE69904912T2/de not_active Expired - Lifetime
- 1999-11-30 KR KR1019990053684A patent/KR100351530B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1043838A2 (de) | 2000-10-11 |
EP1043838B1 (de) | 2003-01-15 |
KR20000047772A (ko) | 2000-07-25 |
EP1043838A3 (de) | 2001-02-07 |
DE69904912D1 (de) | 2003-02-20 |
US5963080A (en) | 1999-10-05 |
KR100351530B1 (ko) | 2002-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |