DE69904566D1 - Plasmabehandlung zur erzeugung von elektronenquellen - Google Patents

Plasmabehandlung zur erzeugung von elektronenquellen

Info

Publication number
DE69904566D1
DE69904566D1 DE69904566T DE69904566T DE69904566D1 DE 69904566 D1 DE69904566 D1 DE 69904566D1 DE 69904566 T DE69904566 T DE 69904566T DE 69904566 T DE69904566 T DE 69904566T DE 69904566 D1 DE69904566 D1 DE 69904566D1
Authority
DE
Germany
Prior art keywords
plasma treatment
electron sources
generating electron
generating
sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69904566T
Other languages
English (en)
Other versions
DE69904566T2 (de
Inventor
Mayo Coates
Carl Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
EIDP Inc
Original Assignee
University of California
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California, EI Du Pont de Nemours and Co filed Critical University of California
Publication of DE69904566D1 publication Critical patent/DE69904566D1/de
Application granted granted Critical
Publication of DE69904566T2 publication Critical patent/DE69904566T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
DE69904566T 1998-01-09 1999-01-05 Plasmabehandlung zur erzeugung von elektronenquellen Expired - Fee Related DE69904566T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7105598P 1998-01-09 1998-01-09
PCT/US1999/000082 WO1999035667A1 (en) 1998-01-09 1999-01-05 Plasma treatment for producing electron emitters

Publications (2)

Publication Number Publication Date
DE69904566D1 true DE69904566D1 (de) 2003-01-30
DE69904566T2 DE69904566T2 (de) 2003-08-21

Family

ID=22098972

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904566T Expired - Fee Related DE69904566T2 (de) 1998-01-09 1999-01-05 Plasmabehandlung zur erzeugung von elektronenquellen

Country Status (7)

Country Link
US (1) US6319367B1 (de)
EP (1) EP1046186B1 (de)
JP (1) JP2002501284A (de)
KR (1) KR20010033985A (de)
CN (1) CN1288584A (de)
DE (1) DE69904566T2 (de)
WO (1) WO1999035667A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3857156B2 (ja) 2002-02-22 2006-12-13 株式会社日立製作所 電子源用ペースト、電子源およびこの電子源を用いた自発光パネル型表示装置
PL1802291T3 (pl) 2004-10-04 2012-05-31 Univ Minnesota Oparte na kaliksarenie mimetyki konformacji peptydu, sposoby ich stosowania oraz sposoby przygotowania
KR101823500B1 (ko) * 2011-07-11 2018-01-31 삼성전자주식회사 상변화 메모리 장치의 제조 방법
US8866068B2 (en) 2012-12-27 2014-10-21 Schlumberger Technology Corporation Ion source with cathode having an array of nano-sized projections
CN103972062A (zh) * 2014-05-15 2014-08-06 京东方科技集团股份有限公司 一种离子注入的方法
US20170287720A1 (en) * 2016-03-31 2017-10-05 Sandia Corporation Methods to Prevent Whisker Growth in Metal Coatings

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100722A (en) * 1980-12-15 1982-06-23 Dainippon Printing Co Ltd Deposition of metal on semiconductor wafer
JPS5832417A (ja) * 1981-08-21 1983-02-25 Matsushita Electric Ind Co Ltd プラズマエツチング装置及びプラズマエツチング方法
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
DE4429380C1 (de) * 1994-08-15 1996-04-25 Biotronik Mess & Therapieg Verfahren zur Herstellung einer nichtkollabierenden intravasalen Gefäßprothese (Stent)
JP3483972B2 (ja) * 1995-02-16 2004-01-06 新日本無線株式会社 電界放出型陰極
US5713775A (en) * 1995-05-02 1998-02-03 Massachusetts Institute Of Technology Field emitters of wide-bandgap materials and methods for their fabrication

Also Published As

Publication number Publication date
JP2002501284A (ja) 2002-01-15
US6319367B1 (en) 2001-11-20
WO1999035667A1 (en) 1999-07-15
CN1288584A (zh) 2001-03-21
KR20010033985A (ko) 2001-04-25
EP1046186B1 (de) 2002-12-18
DE69904566T2 (de) 2003-08-21
EP1046186A1 (de) 2000-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee