DE69903539D1 - Verfahren und vorrichtung zur implantation mit ionen niedriger energie - Google Patents
Verfahren und vorrichtung zur implantation mit ionen niedriger energieInfo
- Publication number
- DE69903539D1 DE69903539D1 DE69903539T DE69903539T DE69903539D1 DE 69903539 D1 DE69903539 D1 DE 69903539D1 DE 69903539 T DE69903539 T DE 69903539T DE 69903539 T DE69903539 T DE 69903539T DE 69903539 D1 DE69903539 D1 DE 69903539D1
- Authority
- DE
- Germany
- Prior art keywords
- implanting
- ions
- low energy
- energy
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8390498A | 1998-05-22 | 1998-05-22 | |
PCT/US1999/010169 WO1999062098A1 (en) | 1998-05-22 | 1999-05-10 | Method and apparatus for low energy ion implantation |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69903539D1 true DE69903539D1 (de) | 2002-11-21 |
DE69903539T2 DE69903539T2 (de) | 2003-06-12 |
Family
ID=22181405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69903539T Expired - Fee Related DE69903539T2 (de) | 1998-05-22 | 1999-05-10 | Verfahren und vorrichtung zur implantation mit ionen niedriger energie |
Country Status (7)
Country | Link |
---|---|
US (1) | US6528804B1 (de) |
EP (1) | EP1080482B1 (de) |
JP (1) | JP2002517068A (de) |
KR (1) | KR20010043738A (de) |
DE (1) | DE69903539T2 (de) |
TW (1) | TW446987B (de) |
WO (1) | WO1999062098A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6791097B2 (en) * | 2001-01-18 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Adjustable conductance limiting aperture for ion implanters |
US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
KR101160642B1 (ko) * | 2003-12-12 | 2012-06-28 | 세미이큅, 인코포레이티드 | 고체로부터 승화된 증기의 유동제어 |
WO2009039382A1 (en) * | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
US8461554B1 (en) * | 2011-12-07 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for charge neutralization during processing of a workpiece |
CN103779162A (zh) * | 2012-11-09 | 2014-05-07 | 北京中科信电子装备有限公司 | 一种离子注入机加速器 |
JP6429763B2 (ja) * | 2015-12-22 | 2018-11-28 | 三菱電機株式会社 | イオン注入装置 |
DE102016005537A1 (de) * | 2016-05-04 | 2017-11-09 | Forschungszentrum Jülich GmbH Fachbereich Patente | Verfahren zur Herstellung von Schichten von ReRAM-Speichern und Verwendung eines Implanters |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3908183A (en) * | 1973-03-14 | 1975-09-23 | California Linear Circuits Inc | Combined ion implantation and kinetic transport deposition process |
US4011449A (en) | 1975-11-05 | 1977-03-08 | Ibm Corporation | Apparatus for measuring the beam current of charged particle beam |
US4135097A (en) * | 1977-05-05 | 1979-01-16 | International Business Machines Corporation | Ion implantation apparatus for controlling the surface potential of a target surface |
US4276477A (en) | 1979-09-17 | 1981-06-30 | Varian Associates, Inc. | Focusing apparatus for uniform application of charged particle beam |
US4283631A (en) | 1980-02-22 | 1981-08-11 | Varian Associates, Inc. | Bean scanning and method of use for ion implantation |
US4922106A (en) | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
US4892752A (en) * | 1987-08-12 | 1990-01-09 | Oki Electric Industry Co., Ltd. | Method of ion implantation |
US4899059A (en) | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
JP2704438B2 (ja) * | 1989-09-04 | 1998-01-26 | 東京エレクトロン株式会社 | イオン注入装置 |
NL9000822A (nl) | 1990-04-09 | 1991-11-01 | Philips Nv | Werkwijze voor bestraling van een object met een geladen deeltjesbundel en inrichting voor uitvoering van de werkwijze. |
JP2648642B2 (ja) | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
JPH05106037A (ja) * | 1991-10-16 | 1993-04-27 | Mitsubishi Electric Corp | イオン注入装置及びその制御方法 |
US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
US5343047A (en) | 1992-06-27 | 1994-08-30 | Tokyo Electron Limited | Ion implantation system |
US5319212A (en) * | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
US5393985A (en) | 1992-11-26 | 1995-02-28 | Shimadzu Corporation | Apparatus for focusing an ion beam |
JP3054302B2 (ja) | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム |
US5350926A (en) | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
JP3123345B2 (ja) | 1994-05-31 | 2001-01-09 | 株式会社日立製作所 | イオン打込み装置 |
GB2344213B (en) | 1995-11-08 | 2000-08-09 | Applied Materials Inc | An ion implanter with improved field control |
GB2343545B (en) | 1995-11-08 | 2000-06-21 | Applied Materials Inc | An ion implanter with three electrode deceleration structure and upstream mass selection |
GB2307592B (en) | 1995-11-23 | 1999-11-10 | Applied Materials Inc | Ion implantation apparatus withimproved post mass selection deceleration |
JP3407548B2 (ja) * | 1996-03-29 | 2003-05-19 | 株式会社日立製作所 | イオン打込み装置及びこれを用いた半導体製造方法 |
JP2921500B2 (ja) | 1996-07-30 | 1999-07-19 | 日本電気株式会社 | イオン注入装置 |
US5909031A (en) * | 1997-09-08 | 1999-06-01 | Eaton Corporation | Ion implanter electron shower having enhanced secondary electron emission |
-
1999
- 1999-05-10 WO PCT/US1999/010169 patent/WO1999062098A1/en not_active Application Discontinuation
- 1999-05-10 JP JP2000551417A patent/JP2002517068A/ja active Pending
- 1999-05-10 DE DE69903539T patent/DE69903539T2/de not_active Expired - Fee Related
- 1999-05-10 EP EP99922888A patent/EP1080482B1/de not_active Expired - Lifetime
- 1999-05-10 KR KR1020007013076A patent/KR20010043738A/ko not_active Application Discontinuation
-
2000
- 2000-03-13 US US09/524,170 patent/US6528804B1/en not_active Expired - Fee Related
- 2000-07-12 TW TW088108265A patent/TW446987B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW446987B (en) | 2001-07-21 |
DE69903539T2 (de) | 2003-06-12 |
EP1080482A1 (de) | 2001-03-07 |
US6528804B1 (en) | 2003-03-04 |
WO1999062098A1 (en) | 1999-12-02 |
EP1080482B1 (de) | 2002-10-16 |
KR20010043738A (ko) | 2001-05-25 |
JP2002517068A (ja) | 2002-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |