DE69804117T2 - Vorrichtung und verfahren zur verbesserten abtasteffizienz in einem ionenimplantationsgerät - Google Patents
Vorrichtung und verfahren zur verbesserten abtasteffizienz in einem ionenimplantationsgerätInfo
- Publication number
- DE69804117T2 DE69804117T2 DE69804117T DE69804117T DE69804117T2 DE 69804117 T2 DE69804117 T2 DE 69804117T2 DE 69804117 T DE69804117 T DE 69804117T DE 69804117 T DE69804117 T DE 69804117T DE 69804117 T2 DE69804117 T2 DE 69804117T2
- Authority
- DE
- Germany
- Prior art keywords
- ion implantation
- scan efficiency
- improved scan
- implantation device
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/929,799 US5981961A (en) | 1996-03-15 | 1997-09-15 | Apparatus and method for improved scanning efficiency in an ion implanter |
PCT/GB1998/002792 WO1999014786A1 (en) | 1997-09-15 | 1998-09-15 | Apparatus and method for improved scanning efficiency in an ion implanter |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69804117D1 DE69804117D1 (de) | 2002-04-11 |
DE69804117T2 true DE69804117T2 (de) | 2002-10-31 |
Family
ID=25458472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69804117T Expired - Lifetime DE69804117T2 (de) | 1997-09-15 | 1998-09-15 | Vorrichtung und verfahren zur verbesserten abtasteffizienz in einem ionenimplantationsgerät |
Country Status (5)
Country | Link |
---|---|
US (1) | US5981961A (de) |
EP (1) | EP1016118B1 (de) |
JP (1) | JP2001516946A (de) |
DE (1) | DE69804117T2 (de) |
WO (1) | WO1999014786A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093456A (en) * | 1995-06-07 | 2000-07-25 | Applied Materials, Inc. | Beam stop apparatus for an ion implanter |
GB2327532B (en) * | 1997-07-16 | 2001-12-19 | Applied Materials Inc | Improved scanning wheel for ion implantation process chamber |
GB2339959B (en) * | 1998-07-21 | 2003-06-18 | Applied Materials Inc | Ion implantation beam monitor |
US6255662B1 (en) * | 1998-10-27 | 2001-07-03 | Axcelis Technologies, Inc. | Rutherford backscattering detection for use in Ion implantation |
EP1056114A3 (de) * | 1999-05-24 | 2007-05-09 | Applied Materials, Inc. | Ionenimplantierungsgerät |
US6169015B1 (en) * | 2000-01-14 | 2001-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd | Method and apparatus for controlling the dosage of ions implanted into a semiconductor wafer |
US6489622B1 (en) * | 2000-03-01 | 2002-12-03 | Advanced Ion Beam Technology, Inc. | Apparatus for decelerating ion beams with minimal energy contamination |
US6580083B2 (en) | 2000-05-15 | 2003-06-17 | Varian Semiconductor Equipment Associates, Inc. | High efficiency scanning in ion implanters |
US7547460B2 (en) | 2000-09-15 | 2009-06-16 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter optimizer scan waveform retention and recovery |
KR100845635B1 (ko) * | 2000-11-22 | 2008-07-10 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 이온 주입용 하이브리드 주사 시스템 및 방법 |
US6710359B2 (en) | 2001-03-23 | 2004-03-23 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for scanned beam uniformity adjustment in ion implanters |
KR100412354B1 (ko) * | 2001-05-30 | 2003-12-31 | 삼성전자주식회사 | 이온주입장치 |
US6908836B2 (en) * | 2002-09-23 | 2005-06-21 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US7049210B2 (en) * | 2002-09-23 | 2006-05-23 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US7282427B1 (en) | 2006-05-04 | 2007-10-16 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US7009193B2 (en) * | 2003-10-31 | 2006-03-07 | Infineon Technologies Richmond, Lp | Utilization of an ion gauge in the process chamber of a semiconductor ion implanter |
GB2427508B (en) * | 2004-01-06 | 2008-06-25 | Applied Materials Inc | Ion beam monitoring arrangement |
US6953942B1 (en) * | 2004-09-20 | 2005-10-11 | Axcelis Technologies, Inc. | Ion beam utilization during scanned ion implantation |
US20060113489A1 (en) * | 2004-11-30 | 2006-06-01 | Axcelis Technologies, Inc. | Optimization of beam utilization |
JP5214090B2 (ja) * | 2004-11-30 | 2013-06-19 | 株式会社Sen | ビーム偏向走査方法及びビーム偏向走査装置並びにイオン注入方法及びイオン注入装置 |
JP5116996B2 (ja) * | 2006-06-20 | 2013-01-09 | キヤノン株式会社 | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
JP2008004596A (ja) * | 2006-06-20 | 2008-01-10 | Canon Inc | 荷電粒子線描画方法、露光装置、及びデバイス製造方法 |
US8055203B2 (en) * | 2007-03-14 | 2011-11-08 | Mks Instruments, Inc. | Multipoint voltage and current probe system |
JP2009099857A (ja) * | 2007-10-18 | 2009-05-07 | Toshiba Corp | 半導体装置の製造システムと製造方法 |
WO2010059991A2 (en) * | 2008-11-20 | 2010-05-27 | The Ohio State University | Digital distance measurer for nerve conduction studies |
US8040068B2 (en) * | 2009-02-05 | 2011-10-18 | Mks Instruments, Inc. | Radio frequency power control system |
US9091133B2 (en) * | 2009-02-20 | 2015-07-28 | Halliburton Energy Services, Inc. | Swellable material activation and monitoring in a subterranean well |
US8633458B2 (en) | 2011-11-15 | 2014-01-21 | Gtat Corporation | Ion implant apparatus and a method of implanting ions |
JP6517520B2 (ja) * | 2015-01-27 | 2019-05-22 | ラピスセミコンダクタ株式会社 | 監視装置、イオン注入装置、及び監視方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1280013A (en) * | 1969-09-05 | 1972-07-05 | Atomic Energy Authority Uk | Improvements in or relating to apparatus bombarding a target with ions |
NL182924C (nl) * | 1978-05-12 | 1988-06-01 | Philips Nv | Inrichting voor het implanteren van ionen in een trefplaat. |
US4276477A (en) * | 1979-09-17 | 1981-06-30 | Varian Associates, Inc. | Focusing apparatus for uniform application of charged particle beam |
JPS57182956A (en) * | 1981-05-07 | 1982-11-11 | Hitachi Ltd | Ion-implantation device |
US4419584A (en) * | 1981-07-14 | 1983-12-06 | Eaton Semi-Conductor Implantation Corporation | Treating workpiece with beams |
US4421988A (en) * | 1982-02-18 | 1983-12-20 | Varian Associates, Inc. | Beam scanning method and apparatus for ion implantation |
JPS59103262A (ja) * | 1982-12-06 | 1984-06-14 | Mitsubishi Electric Corp | 半導体ウエ−ハへのイオン注入装置 |
US5389793A (en) * | 1983-08-15 | 1995-02-14 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
JPH0630237B2 (ja) * | 1984-09-10 | 1994-04-20 | 株式会社日立製作所 | イオン打込み装置 |
US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US4922106A (en) * | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
US4980562A (en) * | 1986-04-09 | 1990-12-25 | Varian Associates, Inc. | Method and apparatus for high efficiency scanning in an ion implanter |
US4751393A (en) * | 1986-05-16 | 1988-06-14 | Varian Associates, Inc. | Dose measurement and uniformity monitoring system for ion implantation |
US4761559A (en) * | 1986-09-24 | 1988-08-02 | Eaton Corporation | Ion beam implantation display method and apparatus |
US4736107A (en) * | 1986-09-24 | 1988-04-05 | Eaton Corporation | Ion beam implanter scan control system |
US4804852A (en) * | 1987-01-29 | 1989-02-14 | Eaton Corporation | Treating work pieces with electro-magnetically scanned ion beams |
US5053627A (en) * | 1990-03-01 | 1991-10-01 | Ibis Technology Corporation | Apparatus for ion implantation |
JP3125384B2 (ja) * | 1991-11-14 | 2001-01-15 | 日本電気株式会社 | イオン注入装置 |
US5229615A (en) * | 1992-03-05 | 1993-07-20 | Eaton Corporation | End station for a parallel beam ion implanter |
US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
US5432352A (en) * | 1993-09-20 | 1995-07-11 | Eaton Corporation | Ion beam scan control |
US5406088A (en) * | 1993-12-22 | 1995-04-11 | Eaton Corporation | Scan and tilt apparatus for an ion implanter |
DE69525563T2 (de) * | 1994-06-10 | 2002-10-31 | Axcelis Tech Inc | Ionenimplantierungsgerät |
DE69724310T2 (de) * | 1996-03-15 | 2004-07-01 | Applied Materials, Inc., Santa Clara | Abtastverfahren und -vorrichtung für ein Ionenimplantationsgerät |
-
1997
- 1997-09-15 US US08/929,799 patent/US5981961A/en not_active Expired - Lifetime
-
1998
- 1998-09-15 DE DE69804117T patent/DE69804117T2/de not_active Expired - Lifetime
- 1998-09-15 WO PCT/GB1998/002792 patent/WO1999014786A1/en active IP Right Grant
- 1998-09-15 JP JP2000512231A patent/JP2001516946A/ja not_active Withdrawn
- 1998-09-15 EP EP98942927A patent/EP1016118B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5981961A (en) | 1999-11-09 |
WO1999014786A1 (en) | 1999-03-25 |
DE69804117D1 (de) | 2002-04-11 |
JP2001516946A (ja) | 2001-10-02 |
EP1016118A1 (de) | 2000-07-05 |
EP1016118B1 (de) | 2002-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |