DE69841048D1 - System und Verfahren zum kontinuierlichen Abscheiden von isolierendem Material mittels mehrerer, alternativ zwischen positiven und negativen Spannungen geschalteter Anoden - Google Patents

System und Verfahren zum kontinuierlichen Abscheiden von isolierendem Material mittels mehrerer, alternativ zwischen positiven und negativen Spannungen geschalteter Anoden

Info

Publication number
DE69841048D1
DE69841048D1 DE69841048T DE69841048T DE69841048D1 DE 69841048 D1 DE69841048 D1 DE 69841048D1 DE 69841048 T DE69841048 T DE 69841048T DE 69841048 T DE69841048 T DE 69841048T DE 69841048 D1 DE69841048 D1 DE 69841048D1
Authority
DE
Germany
Prior art keywords
anodes
positive
several
insulating material
negative voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841048T
Other languages
English (en)
Inventor
Douglas S Schatz
Richard A Scholl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Application granted granted Critical
Publication of DE69841048D1 publication Critical patent/DE69841048D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69841048T 1997-05-28 1998-05-26 System und Verfahren zum kontinuierlichen Abscheiden von isolierendem Material mittels mehrerer, alternativ zwischen positiven und negativen Spannungen geschalteter Anoden Expired - Lifetime DE69841048D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/864,766 US5897753A (en) 1997-05-28 1997-05-28 Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages

Publications (1)

Publication Number Publication Date
DE69841048D1 true DE69841048D1 (de) 2009-09-17

Family

ID=25344027

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69835363T Expired - Lifetime DE69835363T2 (de) 1997-05-28 1998-05-26 Kontinuierliche abscheidung eines isolierenden materials mittels mehrerer unter alternierend positiver und negativer spannung stehender anoden
DE69841048T Expired - Lifetime DE69841048D1 (de) 1997-05-28 1998-05-26 System und Verfahren zum kontinuierlichen Abscheiden von isolierendem Material mittels mehrerer, alternativ zwischen positiven und negativen Spannungen geschalteter Anoden

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69835363T Expired - Lifetime DE69835363T2 (de) 1997-05-28 1998-05-26 Kontinuierliche abscheidung eines isolierenden materials mittels mehrerer unter alternierend positiver und negativer spannung stehender anoden

Country Status (6)

Country Link
US (2) US5897753A (de)
EP (2) EP1016122B1 (de)
JP (1) JP4208970B2 (de)
KR (1) KR100627862B1 (de)
DE (2) DE69835363T2 (de)
WO (1) WO1998054749A1 (de)

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US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
US6579805B1 (en) * 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6245435B1 (en) 1999-03-01 2001-06-12 Moen Incorporated Decorative corrosion and abrasion resistant coating
US6818103B1 (en) 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
WO2001029278A1 (en) * 1999-10-15 2001-04-26 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
US6433553B1 (en) * 1999-10-27 2002-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
JP2003516706A (ja) * 1999-12-07 2003-05-13 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド フラックス制御変圧器を有する電源
US6444945B1 (en) 2001-03-28 2002-09-03 Cp Films, Inc. Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source
US7026057B2 (en) 2002-01-23 2006-04-11 Moen Incorporated Corrosion and abrasion resistant decorative coating
US6760213B2 (en) * 2002-03-04 2004-07-06 Hitachi High-Technologies Corporation Electrostatic chuck and method of treating substrate using electrostatic chuck
US6824653B2 (en) * 2003-02-21 2004-11-30 Agilent Technologies, Inc Magnetron with controlled DC power
US7375035B2 (en) * 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7429714B2 (en) * 2003-06-20 2008-09-30 Ronal Systems Corporation Modular ICP torch assembly
JP4658506B2 (ja) * 2004-03-31 2011-03-23 浩史 滝川 パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置
US7211179B2 (en) * 2004-12-17 2007-05-01 Advanced Energy Industries, Inc. Dual anode AC supply for continuous deposition of a cathode material
IES20050301A2 (en) * 2005-05-11 2006-11-15 Univ Dublin City Plasma source
US7342361B2 (en) * 2005-05-11 2008-03-11 Dublin City University Plasma source
US20070068794A1 (en) * 2005-09-23 2007-03-29 Barret Lippey Anode reactive dual magnetron sputtering
US9117637B2 (en) * 2005-11-04 2015-08-25 Von Ardenne Gmbh Redundant anode sputtering method and assembly
US7850828B2 (en) * 2006-09-15 2010-12-14 Cardinal Cg Company Enhanced virtual anode
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
JP4825742B2 (ja) * 2007-06-26 2011-11-30 株式会社アルバック 成膜装置
WO2009040406A2 (de) * 2007-09-25 2009-04-02 Von Ardenne Anlagentechnik Gmbh Verfahren und anordnung zum redundanten anoden-sputtern mit einer dual-anoden-anordnung
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
DE102010047963A1 (de) * 2010-10-08 2012-04-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetron-Vorrichtung und Verfahren zum gepulsten Betreiben einer Magnetron-Vorrichtung
JP5655865B2 (ja) * 2011-01-12 2015-01-21 日新電機株式会社 プラズマ装置
JP2014089876A (ja) * 2012-10-30 2014-05-15 Tokyo Electron Ltd プラズマ処理装置
CN107208249B (zh) 2015-02-03 2019-08-20 卡迪奈尔镀膜玻璃公司 包括气体分配系统的喷溅装置
US9812305B2 (en) 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
DE102015106535B4 (de) * 2015-04-28 2021-02-04 VON ARDENNE Asset GmbH & Co. KG Sputteranordnung
US10373811B2 (en) 2015-07-24 2019-08-06 Aes Global Holdings, Pte. Ltd Systems and methods for single magnetron sputtering
US9721765B2 (en) * 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current

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US3464907A (en) * 1967-02-23 1969-09-02 Victory Eng Corp Triode sputtering apparatus and method using synchronized pulsating current
US3507774A (en) * 1967-06-02 1970-04-21 Nat Res Corp Low energy sputtering apparatus for operation below one micron pressure
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US3709809A (en) * 1971-07-15 1973-01-09 Dow Chemical Co Sputter deposition of refractory carbide on metal working
DE2735525A1 (de) * 1977-08-06 1979-02-22 Leybold Heraeus Gmbh & Co Kg Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate
US4201654A (en) * 1978-10-06 1980-05-06 The United States Of America As Represented By The Secretary Of The Air Force Anode assisted sputter etch and deposition apparatus
JPS5996266A (ja) * 1982-11-22 1984-06-02 Fujitsu Ltd スパツタ装置
JPH0719183B2 (ja) * 1984-06-04 1995-03-06 日本真空技術株式会社 プラズマ利用装置用のｒｆ電力供給制御装置
US4853102A (en) * 1987-01-07 1989-08-01 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
DE3709175A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JPH0791645B2 (ja) * 1989-04-28 1995-10-04 株式会社日立製作所 薄膜形成装置
US5241152A (en) * 1990-03-23 1993-08-31 Anderson Glen L Circuit for detecting and diverting an electrical arc in a glow discharge apparatus
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
DE4235064A1 (de) * 1992-10-17 1994-04-21 Leybold Ag Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung
DE4237517A1 (de) * 1992-11-06 1994-05-11 Leybold Ag Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
US5718813A (en) * 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5616225A (en) * 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
DE4438463C1 (de) * 1994-10-27 1996-02-15 Fraunhofer Ges Forschung Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen
US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages

Also Published As

Publication number Publication date
KR100627862B1 (ko) 2006-09-25
US6183605B1 (en) 2001-02-06
JP4208970B2 (ja) 2009-01-14
KR20010013110A (ko) 2001-02-26
JP2002501577A (ja) 2002-01-15
DE69835363D1 (de) 2006-09-07
EP1458006A1 (de) 2004-09-15
US5897753A (en) 1999-04-27
WO1998054749A1 (en) 1998-12-03
EP1016122B1 (de) 2006-07-26
DE69835363T2 (de) 2006-11-23
EP1458006B1 (de) 2009-08-05
EP1016122A1 (de) 2000-07-05

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