DE69841000D1 - Verfahren zur verminderung des leistungsverlusts in einem mosfet zur verwendung in einem gleichspannungswandler - Google Patents

Verfahren zur verminderung des leistungsverlusts in einem mosfet zur verwendung in einem gleichspannungswandler

Info

Publication number
DE69841000D1
DE69841000D1 DE69841000T DE69841000T DE69841000D1 DE 69841000 D1 DE69841000 D1 DE 69841000D1 DE 69841000 T DE69841000 T DE 69841000T DE 69841000 T DE69841000 T DE 69841000T DE 69841000 D1 DE69841000 D1 DE 69841000D1
Authority
DE
Germany
Prior art keywords
mosfet
power
voltage converter
reducing loss
loss
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841000T
Other languages
English (en)
Inventor
Richard K Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Application granted granted Critical
Publication of DE69841000D1 publication Critical patent/DE69841000D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
DE69841000T 1997-03-31 1998-03-20 Verfahren zur verminderung des leistungsverlusts in einem mosfet zur verwendung in einem gleichspannungswandler Expired - Lifetime DE69841000D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/828,474 US5973367A (en) 1995-10-13 1997-03-31 Multiple gated MOSFET for use in DC-DC converter
PCT/US1998/003808 WO1998044560A1 (en) 1997-03-31 1998-03-20 Multiple gated mosfet for use in dc-dc converter

Publications (1)

Publication Number Publication Date
DE69841000D1 true DE69841000D1 (de) 2009-09-03

Family

ID=25251912

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841000T Expired - Lifetime DE69841000D1 (de) 1997-03-31 1998-03-20 Verfahren zur verminderung des leistungsverlusts in einem mosfet zur verwendung in einem gleichspannungswandler

Country Status (5)

Country Link
US (1) US5973367A (de)
EP (1) EP1012882B1 (de)
AU (1) AU6441198A (de)
DE (1) DE69841000D1 (de)
WO (1) WO1998044560A1 (de)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222229B1 (en) * 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
US6373098B1 (en) * 1999-05-25 2002-04-16 Fairchild Semiconductor Corporation Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device
DE10008545A1 (de) * 2000-02-24 2001-08-30 Bosch Gmbh Robert Monolithisch integriertes Halbleiterbauelement
US6429499B1 (en) * 2000-05-18 2002-08-06 International Business Machines Corporation Method and apparatus for a monolithic integrated MESFET and p-i-n optical receiver
US20020071293A1 (en) * 2000-07-13 2002-06-13 Eden Richard C. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
CN1187839C (zh) * 2001-01-19 2005-02-02 三菱电机株式会社 半导体装置
US6930473B2 (en) * 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
JP2004519991A (ja) * 2001-03-28 2004-07-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 同期整流器
US6924681B2 (en) * 2001-05-23 2005-08-02 Texas Instruments Incorporated Efficient pulse amplitude modulation transmit modulation
US6710424B2 (en) 2001-09-21 2004-03-23 Airip RF chipset architecture
US6621146B1 (en) * 2001-09-26 2003-09-16 Lsi Logic Corporation Method and apparatus for the use of embedded resistance to linearize and improve the matching properties of transistors
US7257701B2 (en) * 2001-11-21 2007-08-14 Lenovo (Singapore) Pte. Ltd. Method and system for configuring an operating system in a computer system
GB2384632B (en) * 2002-01-25 2005-11-16 Zetex Plc Current limiting protection circuit
AU2003238828A1 (en) * 2002-05-24 2003-12-12 Arizona Board Of Regents Integrated zvs synchronous buck dc-dc converter with adaptive control
US7719054B2 (en) * 2006-05-31 2010-05-18 Advanced Analogic Technologies, Inc. High-voltage lateral DMOS device
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6806580B2 (en) * 2002-12-26 2004-10-19 Fairchild Semiconductor Corporation Multichip module including substrate with an array of interconnect structures
US7000128B1 (en) * 2002-12-30 2006-02-14 National Semiconductor Corporation Method and apparatus for reducing capacitive load-related power loss by gate charge adjustment
JP3696211B2 (ja) * 2003-02-10 2005-09-14 株式会社東芝 パワースイッチング装置
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4198539B2 (ja) * 2003-06-16 2008-12-17 Ｎｅｃエレクトロニクス株式会社 出力回路
US6809560B1 (en) 2003-07-11 2004-10-26 Micrel, Inc. Load sensing circuit for a power MOSFET switch
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
KR100595447B1 (ko) * 2004-03-26 2006-07-03 삼성전자주식회사 Ｄｃ-ｄｃ 컨버터 및 그 제어방법
DE102004030129A1 (de) * 2004-06-22 2006-01-19 Robert Bosch Gmbh Schaltungsanordnung und Verfahren zur Einstellung der Leistungsaufnahme einer an einem Gleichspannungsnetz betreibbaren Last
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
TWI348262B (en) * 2005-02-10 2011-09-01 Bruno Ferrario A circuit and method for adaptive frequency compensation for dc-to-dc converter
DE112006000832B4 (de) 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
US8598659B2 (en) * 2005-10-26 2013-12-03 Hewlett-Packard Development Company, L.P. Single finger gate transistor
ITVA20060001A1 (it) 2006-01-04 2007-07-05 St Microelectronics Srl Metodo per generare un segnale rappresentativo della corrente erogata ad un carico da un dispositvo di potenza e relativo dispositivo di potenza
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7489855B2 (en) * 2006-07-31 2009-02-10 Infinson Technologies Ag Systems and methods for driving a load
US7821750B2 (en) * 2006-08-30 2010-10-26 Leadtrend Technology Corp. Voltage converter for preventing switch device from being damaged by voltage spike by utilizing protection circuit
ITTO20060785A1 (it) * 2006-11-02 2008-05-03 St Microelectronics Srl Dispositivo mos resistente alla radiazione ionizzante
US20080111529A1 (en) * 2006-11-10 2008-05-15 Dell Products L.P. Methods, apparatus and media for control scheme for parallel high-side switching mosfets
US8049364B2 (en) * 2007-06-04 2011-11-01 Electrikus, Inc. Back-up power system
US8222874B2 (en) * 2007-06-26 2012-07-17 Vishay-Siliconix Current mode boost converter using slope compensation
CN101868856B (zh) 2007-09-21 2014-03-12 飞兆半导体公司 用于功率器件的超结结构及制造方法
KR101405310B1 (ko) * 2007-09-28 2014-06-12 삼성전자 주식회사 반도체 집적 회로 장치 및 그 제조 방법
DE102007053405A1 (de) * 2007-11-09 2009-05-28 Continental Automotive Gmbh Integrierte Schaltungsanordnung zum Schalten einer oder mehrerer induktiver Lasten
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US7910991B2 (en) * 2008-03-31 2011-03-22 Freescale Semiconductor, Inc. Dual gate lateral diffused MOS transistor
US8164157B2 (en) * 2008-07-27 2012-04-24 David Robert Morgan Signal absorption induction circuit
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
DE102008060793B4 (de) * 2008-12-05 2010-09-02 Continental Automotive Gmbh Schaltungsanordnung zum Schalten einer oder mehrerer induktiver Lasten
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8219832B2 (en) * 2009-03-26 2012-07-10 Dell Products L.P. Methods and systems for managing a voltage regulator
US8183892B2 (en) 2009-06-05 2012-05-22 Fairchild Semiconductor Corporation Monolithic low impedance dual gate current sense MOSFET
US20110121387A1 (en) * 2009-11-23 2011-05-26 Francois Hebert Integrated guarded schottky diode compatible with trench-gate dmos, structure and method
US8283905B2 (en) * 2009-12-01 2012-10-09 Upi Semiconductor Corporation Voltage converter and control method thereof
US20110148376A1 (en) * 2009-12-23 2011-06-23 Texas Instruments Incorporated Mosfet with gate pull-down
US8547162B2 (en) * 2009-12-23 2013-10-01 Texas Instruments Incorporated Integration of MOSFETs in a source-down configuration
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US8492225B2 (en) * 2009-12-30 2013-07-23 Intersil Americas Inc. Integrated trench guarded schottky diode compatible with powerdie, structure and method
US9263439B2 (en) * 2010-05-24 2016-02-16 Infineon Technologies Americas Corp. III-nitride switching device with an emulated diode
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP2012054502A (ja) * 2010-09-03 2012-03-15 Elpida Memory Inc 半導体装置
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
WO2013042406A1 (ja) * 2011-09-21 2013-03-28 三菱電機株式会社 電力用半導体装置
US9225253B2 (en) * 2012-10-23 2015-12-29 Microchip Technology Inc. High voltage switching linear amplifier and method therefor
CN103887336B (zh) * 2012-12-19 2016-06-15 旺宏电子股份有限公司 半导体结构及其制造方法
US9035386B2 (en) * 2012-12-21 2015-05-19 Macronix International Co., Ltd. Semiconductor structure and method for manufacturing the same
US9337253B2 (en) 2013-03-09 2016-05-10 Microchip Technology Incorporated Method and apparatus for constructing an isolation capacitor in an integrated circuit
US8988142B2 (en) 2013-03-10 2015-03-24 Microchip Technology Incorporated Integrated high voltage isolation using low value capacitors
WO2014164507A1 (en) * 2013-03-11 2014-10-09 Microchip Technology Incorporated Power field-effect transistor and corresponding package, system and manufacturing methods
US9024354B2 (en) * 2013-08-06 2015-05-05 Amazing Microelectronics Corp. Silicon-controlled rectification device with high efficiency
US9331197B2 (en) 2013-08-08 2016-05-03 Cree, Inc. Vertical power transistor device
US9318597B2 (en) * 2013-09-20 2016-04-19 Cree, Inc. Layout configurations for integrating schottky contacts into a power transistor device
US10600903B2 (en) * 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
US10868169B2 (en) 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
US9362356B2 (en) * 2014-11-12 2016-06-07 Analog Devices Global Transistor
CN106206702B (zh) * 2016-07-19 2019-06-18 东南大学 分段双沟槽高压屏蔽的横向绝缘栅双极器件
JP6740831B2 (ja) * 2016-09-14 2020-08-19 富士電機株式会社 半導体装置
US10243562B2 (en) * 2017-02-28 2019-03-26 International Business Machines Corporation Level-shifting circuit for non-complementary logic
DE102017130223B4 (de) * 2017-12-15 2020-06-04 Infineon Technologies Ag Halbleitervorrichtung mit elektrisch parallel geschalteten planaren Feldeffekttransistorzellen und zugehöriger DC-DC-Wandler
US10636902B2 (en) 2018-09-13 2020-04-28 Ptek Technology Co., Ltd. Multiple gated power MOSFET device
CN110233603A (zh) * 2019-07-10 2019-09-13 宁波大学 一种带谐波抑制的cmos d类放大器电路
CN110572035B (zh) * 2019-09-30 2021-05-14 重庆中易智芯科技有限责任公司 一种应用于pwm dc/dc的浮动栅宽自适应切换逻辑电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
DE3070786D1 (en) * 1980-11-12 1985-07-25 Ibm Deutschland Electrically switchable read-only memory
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter

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US5973367A (en) 1999-10-26
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