DE69831702D1 - Verfahren und Vorrichtung zur Neutralteilchendetektion in einem Ionenstrahl - Google Patents

Verfahren und Vorrichtung zur Neutralteilchendetektion in einem Ionenstrahl

Info

Publication number
DE69831702D1
DE69831702D1 DE69831702T DE69831702T DE69831702D1 DE 69831702 D1 DE69831702 D1 DE 69831702D1 DE 69831702 T DE69831702 T DE 69831702T DE 69831702 T DE69831702 T DE 69831702T DE 69831702 D1 DE69831702 D1 DE 69831702D1
Authority
DE
Germany
Prior art keywords
ion beam
particle detection
neutral particle
neutral
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69831702T
Other languages
English (en)
Other versions
DE69831702T2 (de
Inventor
Victor Maurice Benveniste
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Application granted granted Critical
Publication of DE69831702D1 publication Critical patent/DE69831702D1/de
Publication of DE69831702T2 publication Critical patent/DE69831702T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)
DE69831702T 1997-07-12 1998-07-02 Verfahren und Vorrichtung zur Neutralteilchendetektion in einem Ionenstrahl Expired - Fee Related DE69831702T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US900379 1997-07-12
US08/900,379 US5814823A (en) 1997-07-12 1997-07-12 System and method for setecing neutral particles in an ion bean

Publications (2)

Publication Number Publication Date
DE69831702D1 true DE69831702D1 (de) 2006-02-09
DE69831702T2 DE69831702T2 (de) 2006-06-29

Family

ID=25412416

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69831702T Expired - Fee Related DE69831702T2 (de) 1997-07-12 1998-07-02 Verfahren und Vorrichtung zur Neutralteilchendetektion in einem Ionenstrahl

Country Status (7)

Country Link
US (1) US5814823A (de)
EP (1) EP0890975B1 (de)
JP (1) JP4196309B2 (de)
KR (1) KR100397028B1 (de)
CN (1) CN1140816C (de)
DE (1) DE69831702T2 (de)
TW (1) TW405144B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300643B1 (en) 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
DE19838553B4 (de) * 1998-08-25 2010-08-12 Thermo Fisher Scientific (Bremen) Gmbh Faraday-Auffänger zur Messung von Ionenströmen in Massenspektrometern
US6050218A (en) * 1998-09-28 2000-04-18 Eaton Corporation Dosimetry cup charge collection in plasma immersion ion implantation
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US7309997B1 (en) 2000-09-15 2007-12-18 Varian Semiconductor Equipment Associates, Inc. Monitor system and method for semiconductor processes
WO2002058102A2 (en) 2001-01-18 2002-07-25 Varian Semiconductor Equipment Associates, Inc. Adjustable conductance limiting aperture for ion implanters
US6891173B2 (en) * 2001-10-26 2005-05-10 Varian Semiconductor Equipment Associates, Inc. Ion implantation systems and methods utilizing a downstream gas source
JP2005005098A (ja) * 2003-06-11 2005-01-06 Sumitomo Eaton Noba Kk イオン注入装置及びその制御方法
TWI225272B (en) * 2003-11-04 2004-12-11 Promos Technologies Inc Method of controlling implanting dosage and method of controlling pressure compensate factor in-situ
US7250617B2 (en) * 2004-02-12 2007-07-31 Varian Semiconductor Equipment Associates, Inc. Ion beam neutral detection
US6992308B2 (en) * 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US7132672B2 (en) * 2004-04-02 2006-11-07 Varian Semiconductor Equipment Associates, Inc. Faraday dose and uniformity monitor for plasma based ion implantation
US7170067B2 (en) * 2005-02-16 2007-01-30 Varian Semiconductor Equipment Associates, Inc. Ion beam measurement apparatus and method
KR100642641B1 (ko) * 2005-03-11 2006-11-10 삼성전자주식회사 중성빔 각도분포 측정 장치
KR100646552B1 (ko) 2005-12-28 2006-11-15 동부일렉트로닉스 주식회사 파라데이컵을 이용한 선량 변화 측정장치
US7723706B2 (en) * 2008-06-19 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Horizontal and vertical beam angle measurement technique
US20100019141A1 (en) * 2008-07-25 2010-01-28 Varian Semiconductor Equipment Associates, Inc. Energy contamination monitor with neutral current detection
US20110108058A1 (en) * 2009-11-11 2011-05-12 Axcelis Technologies, Inc. Method and apparatus for cleaning residue from an ion source component
US8350213B2 (en) * 2010-03-02 2013-01-08 Hermes Microvision Inc. Charged particle beam detection unit with multi type detection subunits
TWI539154B (zh) * 2012-12-19 2016-06-21 英福康公司 雙重偵測殘餘氣體分析器
US9564290B2 (en) 2014-11-18 2017-02-07 Hamilton Sundstrand Corporation Micro machined two dimensional faraday collector grid
CN105005070B (zh) * 2015-06-05 2018-02-13 北京大学 一种加速器分析磁铁后疑似离子束的甄别方法及其装置
GB2541385B (en) * 2015-08-14 2020-01-01 Thermo Fisher Scient Bremen Gmbh Dynamic range improvement for isotope ratio mass spectrometry
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US11643724B2 (en) * 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11596806B2 (en) * 2021-03-31 2023-03-07 Varian Medical Systems, Inc. Dose rate monitor, system and method
CN113466921B (zh) * 2021-07-01 2023-07-28 兰州空间技术物理研究所 一种适用于电推力器羽流诊断的静电场离子能量分析仪

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660655A (en) * 1969-09-08 1972-05-02 Ass Elect Ind Ion probe with means for mass analyzing neutral particles sputtered from a specimen
DE2445711A1 (de) * 1973-10-03 1975-04-10 Hewlett Packard Co Ionen/elektronen-umwandler
US4587433A (en) * 1984-06-27 1986-05-06 Eaton Corporation Dose control apparatus
US4539217A (en) * 1984-06-27 1985-09-03 Eaton Corporation Dose control method
US4717829A (en) * 1985-03-14 1988-01-05 Varian Associates, Inc. Platen and beam setup flag assembly for ion implanter
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
US5631461A (en) * 1987-06-19 1997-05-20 Science Applications International Corporation Apparatus for, and methods of, detecting the direction and focal properties of neutral particle beams
US4929840A (en) * 1989-02-28 1990-05-29 Eaton Corporation Wafer rotation control for an ion implanter
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
JP3018880B2 (ja) * 1993-12-28 2000-03-13 株式会社日立製作所 質量分析装置及び質量分析方法

Also Published As

Publication number Publication date
JP4196309B2 (ja) 2008-12-17
DE69831702T2 (de) 2006-06-29
KR100397028B1 (ko) 2003-11-28
TW405144B (en) 2000-09-11
CN1140816C (zh) 2004-03-03
JPH1172570A (ja) 1999-03-16
US5814823A (en) 1998-09-29
EP0890975A1 (de) 1999-01-13
KR19990013753A (ko) 1999-02-25
CN1205440A (zh) 1999-01-20
EP0890975B1 (de) 2005-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee