DE69210522D1 - Verfahren und Vorrichtung zur Bestimmung eines Ionenstrahlquerschnitts - Google Patents
Verfahren und Vorrichtung zur Bestimmung eines IonenstrahlquerschnittsInfo
- Publication number
- DE69210522D1 DE69210522D1 DE69210522T DE69210522T DE69210522D1 DE 69210522 D1 DE69210522 D1 DE 69210522D1 DE 69210522 T DE69210522 T DE 69210522T DE 69210522 T DE69210522 T DE 69210522T DE 69210522 D1 DE69210522 D1 DE 69210522D1
- Authority
- DE
- Germany
- Prior art keywords
- determining
- section
- ion beam
- beam cross
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
- H01J2237/24465—Sectored detectors, e.g. quadrants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/767,027 US5198676A (en) | 1991-09-27 | 1991-09-27 | Ion beam profiling method and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69210522D1 true DE69210522D1 (de) | 1996-06-13 |
DE69210522T2 DE69210522T2 (de) | 1996-09-19 |
Family
ID=25078277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69210522T Expired - Fee Related DE69210522T2 (de) | 1991-09-27 | 1992-09-23 | Verfahren und Vorrichtung zur Bestimmung eines Ionenstrahlquerschnitts |
Country Status (6)
Country | Link |
---|---|
US (1) | US5198676A (de) |
EP (1) | EP0534737B1 (de) |
JP (1) | JPH05217542A (de) |
KR (1) | KR0160786B1 (de) |
DE (1) | DE69210522T2 (de) |
TW (1) | TW220006B (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05135731A (ja) * | 1991-07-08 | 1993-06-01 | Sony Corp | イオン注入装置 |
US5384465A (en) * | 1993-09-17 | 1995-01-24 | Applied Materials, Inc. | Spectrum analyzer in an ion implanter |
US5714875A (en) * | 1995-02-23 | 1998-02-03 | Atomic Energy Of Canada Limited | Electron beam stop analyzer |
CA2159531A1 (en) * | 1995-09-29 | 1997-03-30 | Courtland B. Lawrence | Method for monitoring absorbed dose in an electron beam |
SE9602998D0 (sv) | 1996-08-16 | 1996-08-16 | Pacesetter Ab | Manöverdon för en styrtrådsenhet |
US5859437A (en) * | 1997-03-17 | 1999-01-12 | Taiwan Semiconductor Manufacturing Corporation | Intelligent supervision system with expert system for ion implantation process |
GB2382717B (en) * | 1998-07-21 | 2003-09-03 | Applied Materials Inc | Ion Implantation Beam Monitor |
CA2329180A1 (en) | 1998-10-06 | 2000-04-13 | University Of Washington | Charged particle beam detection system |
GB2355337B (en) * | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter and beam stop therefor |
WO2001051183A1 (en) * | 2000-01-07 | 2001-07-19 | Proteros, Llc. | Enhanced faraday cup for diagnostic measurements in an ion implanter |
US6677599B2 (en) * | 2000-03-27 | 2004-01-13 | Applied Materials, Inc. | System and method for uniformly implanting a wafer with an ion beam |
US6762418B2 (en) | 2001-03-13 | 2004-07-13 | Advanced Cardiovascular Systems, Inc. | Calorimetry as a routine dosimeter at an electron beam processing facility |
US6583421B2 (en) | 2001-10-11 | 2003-06-24 | Diamond Semiconductor Group, Llc | Charge measuring device with wide dynamic range |
WO2004053943A2 (en) * | 2002-12-11 | 2004-06-24 | Purser Kenneth H | Emittance measuring device for ion beams |
US6677598B1 (en) | 2003-04-29 | 2004-01-13 | Axcelis Technologies, Inc. | Beam uniformity and angular distribution measurement system |
US7338683B2 (en) * | 2004-05-10 | 2008-03-04 | Superpower, Inc. | Superconductor fabrication processes |
US6872953B1 (en) | 2004-05-20 | 2005-03-29 | Axcelis Technologies, Inc. | Two dimensional stationary beam profile and angular mapping |
US6989545B1 (en) * | 2004-07-07 | 2006-01-24 | Axcelis Technologies, Inc. | Device and method for measurement of beam angle and divergence |
US7196719B2 (en) | 2004-07-16 | 2007-03-27 | Vision Robotics Corporation | Angled axis machine vision system and method |
US7064340B1 (en) * | 2004-12-15 | 2006-06-20 | Axcelis Technologies, Inc. | Method and apparatus for ion beam profiling |
US7078707B1 (en) * | 2005-01-04 | 2006-07-18 | Axcelis Technologies, Inc. | Ion beam scanning control methods and systems for ion implantation uniformity |
US7005656B1 (en) * | 2005-02-01 | 2006-02-28 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter with vacuum-maintaining circuit board providing connections to internal faraday cups |
US20080073553A1 (en) * | 2006-02-13 | 2008-03-27 | Ibis Technology Corporation | Ion beam profiler |
US20070210041A1 (en) * | 2006-03-02 | 2007-09-13 | The Regents Of The University Of California | Automatic focusing of electron beams using a modified Faraday cup diagnostic |
US20080017811A1 (en) * | 2006-07-18 | 2008-01-24 | Collart Erik J H | Beam stop for an ion implanter |
US20080142728A1 (en) * | 2006-10-30 | 2008-06-19 | Applied Materials, Inc. | Mechanical scanner |
US7701230B2 (en) * | 2007-04-30 | 2010-04-20 | Axcelis Technologies, Inc. | Method and system for ion beam profiling |
US7875860B2 (en) * | 2008-09-19 | 2011-01-25 | The Boeing Company | Charged particle beam profile measurement |
US8227773B2 (en) * | 2010-07-29 | 2012-07-24 | Axcelis Technologies, Inc. | Versatile beam glitch detection system |
CN103207405B (zh) * | 2013-05-03 | 2014-12-24 | 中国科学院上海应用物理研究所 | 一种用于低能重离子的束团参数测量系统,以及一种频率谐振选能能量测量方法 |
JP6253524B2 (ja) * | 2014-06-13 | 2017-12-27 | 住友重機械イオンテクノロジー株式会社 | ビーム照射装置及びビーム照射方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4234797A (en) * | 1979-05-23 | 1980-11-18 | Nova Associates, Inc. | Treating workpieces with beams |
JPS56126918A (en) * | 1980-03-11 | 1981-10-05 | Hitachi Ltd | Injecting device for ion |
US4608493A (en) * | 1983-05-09 | 1986-08-26 | Sony Corporation | Faraday cup |
US4598323A (en) * | 1983-10-26 | 1986-07-01 | Canon Kabushiki Kaisha | Image processing apparatus |
US4628209A (en) * | 1985-06-07 | 1986-12-09 | Eaton Corporation | Particle implantation apparatus and method |
US4751393A (en) * | 1986-05-16 | 1988-06-14 | Varian Associates, Inc. | Dose measurement and uniformity monitoring system for ion implantation |
US4726587A (en) * | 1986-07-11 | 1988-02-23 | Fitch Robert C | Optical bowling pin sensor |
US4724324A (en) * | 1986-11-24 | 1988-02-09 | Varian Associates, Inc. | Method and apparatus for ion beam centroid location |
US4775796A (en) * | 1987-01-06 | 1988-10-04 | Purser Kenneth H | Treating workpieces with beams |
JPH0191431A (ja) * | 1987-04-16 | 1989-04-11 | Sumitomo Eaton Noba Kk | イオン打ち込み装置におけるウエハ帯電量検知装置 |
US4800100A (en) * | 1987-10-27 | 1989-01-24 | Massachusetts Institute Of Technology | Combined ion and molecular beam apparatus and method for depositing materials |
JPH0770296B2 (ja) * | 1989-05-15 | 1995-07-31 | 日新電機株式会社 | イオン注入装置 |
-
1991
- 1991-09-27 US US07/767,027 patent/US5198676A/en not_active Expired - Lifetime
-
1992
- 1992-09-23 EP EP92308673A patent/EP0534737B1/de not_active Expired - Lifetime
- 1992-09-23 DE DE69210522T patent/DE69210522T2/de not_active Expired - Fee Related
- 1992-09-24 JP JP4279544A patent/JPH05217542A/ja active Pending
- 1992-09-25 KR KR1019920017492A patent/KR0160786B1/ko not_active IP Right Cessation
- 1992-10-07 TW TW081107979A patent/TW220006B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR0160786B1 (ko) | 1999-02-01 |
JPH05217542A (ja) | 1993-08-27 |
DE69210522T2 (de) | 1996-09-19 |
TW220006B (de) | 1994-02-01 |
EP0534737B1 (de) | 1996-05-08 |
KR930006824A (ko) | 1993-04-22 |
EP0534737A1 (de) | 1993-03-31 |
US5198676A (en) | 1993-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AXCELIS TECHNOLOGIES, INC., BEVERLY, MASS., US |
|
8339 | Ceased/non-payment of the annual fee |