DE69831287D1 - Leitender Mikro-Tastkopf und Speichervorrichtung - Google Patents

Leitender Mikro-Tastkopf und Speichervorrichtung

Info

Publication number
DE69831287D1
DE69831287D1 DE69831287T DE69831287T DE69831287D1 DE 69831287 D1 DE69831287 D1 DE 69831287D1 DE 69831287 T DE69831287 T DE 69831287T DE 69831287 T DE69831287 T DE 69831287T DE 69831287 D1 DE69831287 D1 DE 69831287D1
Authority
DE
Germany
Prior art keywords
probe
storage device
conductive micro
micro
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69831287T
Other languages
English (en)
Other versions
DE69831287T2 (de
Inventor
Gary Gibson
Takaaki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE69831287D1 publication Critical patent/DE69831287D1/de
Application granted granted Critical
Publication of DE69831287T2 publication Critical patent/DE69831287T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/34—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/76—Superlattice with graded effective bandgap, e.g. "chirp-graded" superlattice
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y10S977/878—Shape/taper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y10S977/879—Material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Recording Or Reproducing By Magnetic Means (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
DE69831287T 1997-06-09 1998-06-04 Leitender Mikro-Tastkopf und Speichervorrichtung Expired - Fee Related DE69831287T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/871,125 US5936243A (en) 1997-06-09 1997-06-09 Conductive micro-probe and memory device
US871125 1997-06-09

Publications (2)

Publication Number Publication Date
DE69831287D1 true DE69831287D1 (de) 2005-09-29
DE69831287T2 DE69831287T2 (de) 2006-06-22

Family

ID=25356783

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69831287T Expired - Fee Related DE69831287T2 (de) 1997-06-09 1998-06-04 Leitender Mikro-Tastkopf und Speichervorrichtung

Country Status (4)

Country Link
US (1) US5936243A (de)
EP (1) EP0884557B1 (de)
JP (1) JP4156705B2 (de)
DE (1) DE69831287T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139759A (en) * 1997-07-08 2000-10-31 International Business Machines Corporation Method of manufacturing silicided silicon microtips for scanning probe microscopy
US6802646B1 (en) * 2001-04-30 2004-10-12 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
KR100468823B1 (ko) * 1998-02-04 2005-04-06 삼성전자주식회사 다이아몬드팁을이용한고밀도데이터저장장치및그작동방법
EP1130578A3 (de) * 2000-03-03 2006-03-29 International Business Machines Corporation Magnetischer Tausendfüssler für Ultrahochleistungsmagnetspeicherung
AT410032B (de) * 2000-06-09 2003-01-27 Lugstein Alois Dr Verfahren zur herstellung einer vorrichtung für die gleichzeitige durchführung einer elektrochemischen und einer topographischen nahfeldmikroskopie
US6507552B2 (en) 2000-12-01 2003-01-14 Hewlett-Packard Company AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media
KR20020054111A (ko) * 2000-12-27 2002-07-06 오길록 1차원 다기능/다중 탐침 열을 이용한 고속/고밀도 광정보저장장치
TW571291B (en) * 2001-01-31 2004-01-11 Ibm Mechanical data processing
US7170842B2 (en) * 2001-02-15 2007-01-30 Hewlett-Packard Development Company, L.P. Methods for conducting current between a scanned-probe and storage medium
US7102983B2 (en) * 2001-10-30 2006-09-05 Hewlett-Packard Development Company, L.P. Current divider-based storage medium
US20030081532A1 (en) * 2001-10-30 2003-05-01 Gibson Gary A. Supplementary energy sources for atomic resolution storage memory devices
JP2004150839A (ja) * 2002-10-29 2004-05-27 Olympus Corp Ｓｐｍ用カンチレバー及びその製造方法
JPWO2006064546A1 (ja) * 2004-12-14 2008-06-12 株式会社アドバンテスト コンタクトピン、それを用いたプローブカード及び電子部品試験装置
US7183779B2 (en) * 2004-12-28 2007-02-27 Spectrum Technologies, Inc. Soil probe device and method of making same
US20100071100A1 (en) * 2005-04-07 2010-03-18 Faris Sadeg M Probes, Methods of Making Probes, and Applications using Probes
US20070064861A1 (en) * 2005-08-22 2007-03-22 Battelle Energy Alliance, Llc High-density, solid solution nuclear fuel and fuel block utilizing same
JP5123514B2 (ja) * 2006-10-02 2013-01-23 株式会社日本マイクロニクス 通電試験用プローブおよび通電試験用プローブ組立体
US20080151597A1 (en) * 2006-12-20 2008-06-26 Seagate Technology Llc Wear-resistant multilayer probe
US20090010144A1 (en) * 2007-07-02 2009-01-08 Seagate Technology Llc Transducer Assembly and Data Storage Apparatus Including the Transducer Assembly
JP5568268B2 (ja) * 2009-09-15 2014-08-06 株式会社神戸製鋼所 半導体検査装置用コンタクトプローブピン
US8970238B2 (en) * 2011-06-17 2015-03-03 Electro Scientific Industries, Inc. Probe module with interleaved serpentine test contacts for electronic device testing
US8740209B2 (en) * 2012-02-22 2014-06-03 Expresslo Llc Method and apparatus for ex-situ lift-out specimen preparation
TWI510788B (zh) * 2014-01-13 2015-12-01 Taiwan Elite Nano Technology Corp 探針結構及其製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258885A (en) * 1979-03-23 1981-03-31 Legeza Thomas B Nozzle tip and method of manufacture
NL8000898A (nl) * 1980-02-13 1981-09-16 Victor Company Of Japan Weergeefstift voor informatiesignaalregistreermedium van elektrostatisch capacitieve soort.
JPS583144A (ja) * 1981-06-29 1983-01-08 Victor Co Of Japan Ltd 静電容量値の変化検出型再生針
GB8818445D0 (en) * 1988-08-03 1988-09-07 Jones B L Stm probe
US5221415A (en) * 1989-01-17 1993-06-22 Board Of Trustees Of The Leland Stanford Junior University Method of forming microfabricated cantilever stylus with integrated pyramidal tip
US4968585A (en) * 1989-06-20 1990-11-06 The Board Of Trustees Of The Leland Stanford Jr. University Microfabricated cantilever stylus with integrated conical tip
DE68903951T2 (de) * 1989-08-16 1993-07-08 Ibm Verfahren fuer die herstellung mikromechanischer messfuehler fuer afm/stm-profilometrie und mikromechanischer messfuehlerkopf.
DE68902141T2 (de) * 1989-08-16 1993-02-25 Ibm Verfahren fuer die herstellung mikromechanischer messfuehler fuer afm/stm-profilometrie und mikromechanischer messfuehlerkopf.
EP0468071B1 (de) * 1990-07-25 1994-09-14 International Business Machines Corporation Methode zur Herstellung von mikromechanischen Sensoren für AFM/STM/MFM-Profilometrie und mikromechanischer AFM/STM/MFM-Sensorkopf
NL9101169A (nl) * 1991-07-05 1993-02-01 Drukker Int Bv Elektronische tastnaald en werkwijze voor het vervaardigen ervan.
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5393647A (en) * 1993-07-16 1995-02-28 Armand P. Neukermans Method of making superhard tips for micro-probe microscopy and field emission
US5475318A (en) * 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
EP0779642B1 (de) * 1995-12-14 2000-09-13 STMicroelectronics S.r.l. Verfahren zur Herstellung einer Mikrospitzenkathodenstruktur für eine Feldemissionsanzeigetafel
FR2743183B1 (fr) * 1995-12-15 1998-01-30 Commissariat Energie Atomique Dispositif d'enregistrement a micropointe magnetoresistive
US6031250A (en) * 1995-12-20 2000-02-29 Advanced Technology Materials, Inc. Integrated circuit devices and methods employing amorphous silicon carbide resistor materials

Also Published As

Publication number Publication date
JP4156705B2 (ja) 2008-09-24
EP0884557A3 (de) 1999-08-04
US5936243A (en) 1999-08-10
EP0884557A2 (de) 1998-12-16
EP0884557B1 (de) 2005-08-24
DE69831287T2 (de) 2006-06-22
JPH1166506A (ja) 1999-03-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee