DE69820940D1 - Verfahren zur Herstellung von hochdotiertem Silicium - Google Patents
Verfahren zur Herstellung von hochdotiertem SiliciumInfo
- Publication number
- DE69820940D1 DE69820940D1 DE69820940T DE69820940T DE69820940D1 DE 69820940 D1 DE69820940 D1 DE 69820940D1 DE 69820940 T DE69820940 T DE 69820940T DE 69820940 T DE69820940 T DE 69820940T DE 69820940 D1 DE69820940 D1 DE 69820940D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- doped silicon
- highly doped
- highly
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22330497A JP3525141B2 (ja) | 1997-08-20 | 1997-08-20 | 抵抗率が低いn型又はp型金属シリコンの製造方法 |
JP22330497 | 1997-08-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69820940D1 true DE69820940D1 (de) | 2004-02-12 |
DE69820940T2 DE69820940T2 (de) | 2004-11-04 |
Family
ID=16796058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69820940T Expired - Lifetime DE69820940T2 (de) | 1997-08-20 | 1998-08-20 | Verfahren zur Herstellung von hochdotiertem Silicium |
Country Status (4)
Country | Link |
---|---|
US (1) | US6013129A (de) |
EP (1) | EP0903429B1 (de) |
JP (1) | JP3525141B2 (de) |
DE (1) | DE69820940T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003027362A1 (en) * | 2001-09-28 | 2003-04-03 | Memc Electronic Materials, Inc. | Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder |
US6953740B2 (en) * | 2002-03-15 | 2005-10-11 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
US6888170B2 (en) * | 2002-03-15 | 2005-05-03 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
JP4207577B2 (ja) * | 2003-01-17 | 2009-01-14 | 信越半導体株式会社 | Pドープシリコン単結晶の製造方法 |
DE102004004555A1 (de) * | 2004-01-29 | 2005-08-18 | Siltronic Ag | Verfahren zur Herstellung von hoch dotierten Halbleiterscheiben und versetzungsfreie, hoch dotierte Halbleiterscheiben |
US7922817B2 (en) | 2008-04-24 | 2011-04-12 | Memc Electronic Materials, Inc. | Method and device for feeding arsenic dopant into a silicon crystal growing apparatus |
JP7151096B2 (ja) * | 2018-02-21 | 2022-10-12 | 株式会社デンソー | 圧電膜、その製造方法、圧電膜積層体、その製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3485684A (en) * | 1967-03-30 | 1969-12-23 | Trw Semiconductors Inc | Dislocation enhancement control of silicon by introduction of large diameter atomic metals |
GB1426511A (en) * | 1973-02-02 | 1976-03-03 | Handotai Kenkyu Shinkokai | Method for producing a semiconductor device having a very small deviation in lattice constant |
US4631234A (en) * | 1985-09-13 | 1986-12-23 | Texas Instruments Incorporated | Germanium hardened silicon substrate |
JPH0717477B2 (ja) * | 1989-03-15 | 1995-03-01 | シャープ株式会社 | 化合物半導体のエピタキシャル成長方法 |
EP0460937B1 (de) * | 1990-06-05 | 1994-10-19 | Matsushita Electric Industrial Co., Ltd. | Verfahren zur Herstellung eines Halbleiterlasers |
US5169798A (en) * | 1990-06-28 | 1992-12-08 | At&T Bell Laboratories | Forming a semiconductor layer using molecular beam epitaxy |
US5553566A (en) * | 1995-06-22 | 1996-09-10 | Motorola Inc. | Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates |
-
1997
- 1997-08-20 JP JP22330497A patent/JP3525141B2/ja not_active Expired - Fee Related
-
1998
- 1998-08-19 US US09/136,554 patent/US6013129A/en not_active Expired - Fee Related
- 1998-08-20 EP EP98115709A patent/EP0903429B1/de not_active Expired - Lifetime
- 1998-08-20 DE DE69820940T patent/DE69820940T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69820940T2 (de) | 2004-11-04 |
EP0903429A2 (de) | 1999-03-24 |
US6013129A (en) | 2000-01-11 |
JPH1167768A (ja) | 1999-03-09 |
EP0903429B1 (de) | 2004-01-07 |
EP0903429A3 (de) | 2000-08-09 |
JP3525141B2 (ja) | 2004-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |