DE69816052D1 - Elektrisches oder elektronisches bauelement und seine verwendung als nichtflüchtiger speicher und akustische oberflächenwellenvorrichtung - Google Patents

Elektrisches oder elektronisches bauelement und seine verwendung als nichtflüchtiger speicher und akustische oberflächenwellenvorrichtung

Info

Publication number
DE69816052D1
DE69816052D1 DE69816052T DE69816052T DE69816052D1 DE 69816052 D1 DE69816052 D1 DE 69816052D1 DE 69816052 T DE69816052 T DE 69816052T DE 69816052 T DE69816052 T DE 69816052T DE 69816052 D1 DE69816052 D1 DE 69816052D1
Authority
DE
Germany
Prior art keywords
film
electrical
electronic component
volatile storage
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69816052T
Other languages
English (en)
Other versions
DE69816052T2 (de
Inventor
Oystein Fischer
Jean-Marc Triscone
H Ahn
R Beasley
Christophe Renner
Thomas Tybell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Geneve
Original Assignee
Universite de Geneve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Geneve filed Critical Universite de Geneve
Application granted granted Critical
Publication of DE69816052D1 publication Critical patent/DE69816052D1/de
Publication of DE69816052T2 publication Critical patent/DE69816052T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Credit Cards Or The Like (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
DE69816052T 1997-04-01 1998-04-01 Elektrisches oder elektronisches bauelement und seine verwendung als nichtflüchtiger speicher und akustische oberflächenwellenvorrichtung Expired - Lifetime DE69816052T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9704298A FR2761530B1 (fr) 1997-04-01 1997-04-01 Composant electrique ou electronique, notamment circuit electrique ou electronique ou memoire non volatile
FR9704298 1997-04-01
PCT/CH1998/000123 WO1998044498A1 (fr) 1997-04-01 1998-04-01 Composant electrique ou electronique et application comme memoire non volatile et dispositif a ondes acoustiques de surface.

Publications (2)

Publication Number Publication Date
DE69816052D1 true DE69816052D1 (de) 2003-08-07
DE69816052T2 DE69816052T2 (de) 2004-05-19

Family

ID=9505654

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69816052T Expired - Lifetime DE69816052T2 (de) 1997-04-01 1998-04-01 Elektrisches oder elektronisches bauelement und seine verwendung als nichtflüchtiger speicher und akustische oberflächenwellenvorrichtung

Country Status (7)

Country Link
US (1) US6677629B1 (de)
EP (1) EP0972284B1 (de)
JP (1) JP4183756B2 (de)
AT (1) ATE244440T1 (de)
DE (1) DE69816052T2 (de)
FR (1) FR2761530B1 (de)
WO (1) WO1998044498A1 (de)

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EP1227496A1 (de) * 2001-01-17 2002-07-31 Cavendish Kinetics Limited Nichtflüchtiger speicher
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
JP4111032B2 (ja) * 2003-03-26 2008-07-02 セイコーエプソン株式会社 強誘電体素子の製造方法、表面弾性波素子、インクジェットヘッド、インクジェットプリンター、周波数フィルタ、発振器、電子回路、及び電子機器
US20050243592A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F High density data storage device having eraseable bit cells
US20050237906A1 (en) * 2004-04-27 2005-10-27 Gibson Gary A High density data storage
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US20070291623A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Cantilever with control of vertical and lateral position of contact probe tip
US20070121477A1 (en) * 2006-06-15 2007-05-31 Nanochip, Inc. Cantilever with control of vertical and lateral position of contact probe tip
EP2040869B1 (de) * 2006-07-19 2016-01-06 L'Universite De Geneve Verfahren und anlage zur markierung eines objekts
US20080074792A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Control scheme for a memory device
US20080074984A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Architecture for a Memory Device
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
KR100851982B1 (ko) * 2007-02-23 2008-08-12 삼성전자주식회사 강유전체 나노도트를 포함하는 강유전체 정보저장매체 및그 제조방법
US7486432B2 (en) * 2007-03-08 2009-02-03 Hc Photonics Corp. Method for preparing a periodically poled structure
US20080232228A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Systems and methods of writing and reading a ferro-electric media with a probe tip
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
US20080318086A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Surface-treated ferroelectric media for use in systems for storing information
US20080316897A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Methods of treating a surface of a ferroelectric media
US7626846B2 (en) * 2007-07-16 2009-12-01 Nanochip, Inc. Method and media for improving ferroelectric domain stability in an information storage device
US20090129246A1 (en) * 2007-11-21 2009-05-21 Nanochip, Inc. Environmental management of a probe storage device
US20090201015A1 (en) * 2008-02-12 2009-08-13 Nanochip, Inc. Method and device for detecting ferroelectric polarization
US20090213492A1 (en) * 2008-02-22 2009-08-27 Nanochip, Inc. Method of improving stability of domain polarization in ferroelectric thin films
US20090294028A1 (en) * 2008-06-03 2009-12-03 Nanochip, Inc. Process for fabricating high density storage device with high-temperature media
US20100002563A1 (en) * 2008-07-01 2010-01-07 Nanochip, Inc. Media with tetragonally-strained recording layer having improved surface roughness
US20100039729A1 (en) * 2008-08-14 2010-02-18 Nanochip, Inc. Package with integrated magnets for electromagnetically-actuated probe-storage device
US20100039919A1 (en) * 2008-08-15 2010-02-18 Nanochip, Inc. Cantilever Structure for Use in Seek-and-Scan Probe Storage
US20100085863A1 (en) * 2008-10-07 2010-04-08 Nanochip, Inc. Retuning of ferroelectric media built-in-bias

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Also Published As

Publication number Publication date
FR2761530B1 (fr) 1999-06-11
WO1998044498A1 (fr) 1998-10-08
EP0972284A1 (de) 2000-01-19
US6677629B1 (en) 2004-01-13
JP2001525099A (ja) 2001-12-04
DE69816052T2 (de) 2004-05-19
ATE244440T1 (de) 2003-07-15
FR2761530A1 (fr) 1998-10-02
EP0972284B1 (de) 2003-07-02
JP4183756B2 (ja) 2008-11-19

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