DE69804488D1 - Vorlaüferverbindungen auf alkoholbasis für nanoporöse siliziumoxidfilme - Google Patents

Vorlaüferverbindungen auf alkoholbasis für nanoporöse siliziumoxidfilme

Info

Publication number
DE69804488D1
DE69804488D1 DE69804488T DE69804488T DE69804488D1 DE 69804488 D1 DE69804488 D1 DE 69804488D1 DE 69804488 T DE69804488 T DE 69804488T DE 69804488 T DE69804488 T DE 69804488T DE 69804488 D1 DE69804488 D1 DE 69804488D1
Authority
DE
Germany
Prior art keywords
precurrent
alcohol
compounds
silicon oxide
oxide films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69804488T
Other languages
English (en)
Other versions
DE69804488T2 (de
Inventor
Stephen Wallace
James Drage
Teresa Ramos
M Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
AlliedSignal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AlliedSignal Inc filed Critical AlliedSignal Inc
Application granted granted Critical
Publication of DE69804488D1 publication Critical patent/DE69804488D1/de
Publication of DE69804488T2 publication Critical patent/DE69804488T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/04—Esters of silicic acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
DE1998604488 1997-10-31 1998-10-26 Vorlaüferverbindungen auf alkoholbasis für nanoporöse siliziumoxidfilme Expired - Lifetime DE69804488T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6381597P 1997-10-31 1997-10-31
US09/111,081 US6126733A (en) 1997-10-31 1998-07-07 Alcohol based precursors for producing nanoporous silica thin films
PCT/US1998/022565 WO1999023101A1 (en) 1997-10-31 1998-10-26 Alcohol-based processors for producing nanoporous silica thin films

Publications (2)

Publication Number Publication Date
DE69804488D1 true DE69804488D1 (de) 2002-05-02
DE69804488T2 DE69804488T2 (de) 2002-10-17

Family

ID=26743844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998604488 Expired - Lifetime DE69804488T2 (de) 1997-10-31 1998-10-26 Vorlaüferverbindungen auf alkoholbasis für nanoporöse siliziumoxidfilme

Country Status (10)

Country Link
US (1) US6126733A (de)
EP (1) EP1027355B1 (de)
JP (1) JP2003532744A (de)
KR (1) KR100569742B1 (de)
CN (1) CN1229383C (de)
AU (1) AU1120499A (de)
DE (1) DE69804488T2 (de)
MY (1) MY132922A (de)
TW (1) TW504514B (de)
WO (1) WO1999023101A1 (de)

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DE60021476T2 (de) * 1999-06-04 2006-05-24 Jsr Corp. Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten
JP4702970B2 (ja) * 1999-10-12 2011-06-15 旭化成株式会社 絶縁薄膜製造用のシリカ前駆体／有機ポリマー組成物
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
EP1094506A3 (de) 1999-10-18 2004-03-03 Applied Materials, Inc. Schutzschicht für Filme mit besonders kleiner Dielektrizitätskonstante
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US7265062B2 (en) 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
CA2404013A1 (en) * 2000-04-21 2001-11-01 Hongyou Fan Prototyping of patterned functional nanostructures
DE10227230A1 (de) * 2002-06-18 2004-01-08 Data Becker Gmbh & Co. Kg Anordnung sowie Verfahren zum zentrierten Aufbringen eines Etiketts auf einen Datenträger
US7091287B2 (en) * 2001-12-27 2006-08-15 Lg Chem, Ltd. Nanopore forming material for forming insulating film for semiconductors and low dielectric insulating film comprising the same
EP1490454B1 (de) * 2002-01-17 2012-08-15 Silecs OY Verfahren zum herstellung einer vorrichtung mit einem integrierten schaltkreis und korrespondierende vorrichtung mit einem integrierten schaltkreis
WO2003088343A1 (en) * 2002-04-10 2003-10-23 Honeywell International, Inc. New porogens for porous silica dielectric for integral circuit applications
JP4662718B2 (ja) * 2002-04-10 2011-03-30 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用途用の低金属多孔質シリカ誘電体
US7122880B2 (en) * 2002-05-30 2006-10-17 Air Products And Chemicals, Inc. Compositions for preparing low dielectric materials
US7307343B2 (en) 2002-05-30 2007-12-11 Air Products And Chemicals, Inc. Low dielectric materials and methods for making same
US20060141693A1 (en) * 2002-11-27 2006-06-29 Yoshio Hagiwara Semiconductor multilayer interconnection forming method
WO2004066360A2 (en) 2003-01-22 2004-08-05 Honeywell International Inc Apparatus and methods for ionized deposition of a film or thin layer
DE10308949B4 (de) * 2003-02-28 2008-12-11 BAM Bundesanstalt für Materialforschung und -prüfung Verfahren zur Herstellung von anorganisch modifizierten cellulosehaltigen Werkstoffen sowie anorganisch modifizierter Werkstoff
CN100360622C (zh) * 2004-07-09 2008-01-09 中国科学院金属研究所 一种低添加量的纳米Ti颗粒有机防护涂料及制备方法
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
MX2007014980A (es) * 2005-05-31 2008-04-08 Xerocoat Pty Ltd Control de la morfologia de peliculas de silice.
KR101161189B1 (ko) * 2006-07-31 2012-07-02 닛뽕소다 가부시키가이샤 막 물성 개선 처리 방법을 사용하여 이루어지는 유기 박막의 제조 방법
US20080173541A1 (en) * 2007-01-22 2008-07-24 Eal Lee Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
US20090111925A1 (en) * 2007-10-31 2009-04-30 Burnham Kikue S Thermal interface materials, methods of production and uses thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR101116142B1 (ko) 2010-07-30 2012-03-06 엘지이노텍 주식회사 다공구조 실리카 코팅 조성물 및 이의 제조방법
US8864898B2 (en) * 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9587142B2 (en) 2013-07-23 2017-03-07 Lotus Leaf Coatings, Inc. Process for preparing an optically clear superhydrophobic coating solution
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US20170240770A1 (en) 2016-02-23 2017-08-24 Lotus Leaf Coatings, Inc. Sol-Gel Coatings for Contact Lenses
JP6942314B2 (ja) * 2017-07-27 2021-09-29 東レ・ファインケミカル株式会社 シリコーン重合体組成物の製造方法
WO2019039909A1 (ko) 2017-08-24 2019-02-28 주식회사 엘지화학 실리카막의 제조 방법
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JPH083074B2 (ja) * 1986-11-18 1996-01-17 東京応化工業株式会社 シリカ系被膜形成用塗布液
EP0459003A1 (de) * 1990-06-01 1991-12-04 Kabushikikaisha Nippan Kenkyusho Überzugszusammensetzung und antimikrobielles Desodorierungsmittel bestehend aus den Überzugszusammensetzungen
US5514211A (en) * 1991-03-01 1996-05-07 Alcan International Limited Composition for surface treatment
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US5736425A (en) * 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
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TW376408B (en) * 1995-12-01 1999-12-11 Nissan Chemical Ind Ltd Coating film having water repellency and low refractive index

Also Published As

Publication number Publication date
US6126733A (en) 2000-10-03
KR100569742B1 (ko) 2006-04-11
MY132922A (en) 2007-10-31
EP1027355A1 (de) 2000-08-16
TW504514B (en) 2002-10-01
KR20010031574A (ko) 2001-04-16
WO1999023101A1 (en) 1999-05-14
CN1229383C (zh) 2005-11-30
DE69804488T2 (de) 2002-10-17
AU1120499A (en) 1999-05-24
EP1027355B1 (de) 2002-03-27
CN1285837A (zh) 2001-02-28
JP2003532744A (ja) 2003-11-05

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