DE69800954D1 - Verfahren zur Herstellung von festen Lösungen von schichtförmigen Perovskit-Materialien - Google Patents
Verfahren zur Herstellung von festen Lösungen von schichtförmigen Perovskit-MaterialienInfo
- Publication number
- DE69800954D1 DE69800954D1 DE69800954T DE69800954T DE69800954D1 DE 69800954 D1 DE69800954 D1 DE 69800954D1 DE 69800954 T DE69800954 T DE 69800954T DE 69800954 T DE69800954 T DE 69800954T DE 69800954 D1 DE69800954 D1 DE 69800954D1
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- solid solutions
- layered perovskite
- perovskite materials
- layered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title 1
- 239000006104 solid solution Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85225397A | 1997-05-06 | 1997-05-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69800954D1 true DE69800954D1 (de) | 2001-07-26 |
DE69800954T2 DE69800954T2 (de) | 2001-11-22 |
Family
ID=25312854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69800954T Expired - Lifetime DE69800954T2 (de) | 1997-05-06 | 1998-04-30 | Verfahren zur Herstellung von festen Lösungen von schichtförmigen Perovskit-Materialien |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0877100B1 (de) |
JP (1) | JPH1149600A (de) |
KR (1) | KR100279228B1 (de) |
DE (1) | DE69800954T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19743269A1 (de) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Herstellverfahren für eine Bi-haltige keramische Schicht |
US7476314B2 (en) | 2000-08-11 | 2009-01-13 | Reid Roger P | Keyed system for connection of filter cartridge to filter holder |
JP4706479B2 (ja) * | 2003-01-21 | 2011-06-22 | Tdk株式会社 | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
JP4529902B2 (ja) * | 2003-01-21 | 2010-08-25 | Tdk株式会社 | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 |
CN114956816B (zh) * | 2022-06-07 | 2023-03-24 | 清华大学 | 一种高性能烧绿石储能陶瓷材料及其制备方法与应用 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5423285A (en) * | 1991-02-25 | 1995-06-13 | Olympus Optical Co., Ltd. | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
US5468679A (en) * | 1991-02-25 | 1995-11-21 | Symetrix Corporation | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
US5508226A (en) * | 1991-12-13 | 1996-04-16 | Symetrix Corporation | Low temperature process for fabricating layered superlattice materialsand making electronic devices including same |
-
1998
- 1998-04-30 DE DE69800954T patent/DE69800954T2/de not_active Expired - Lifetime
- 1998-04-30 JP JP10120924A patent/JPH1149600A/ja not_active Withdrawn
- 1998-04-30 EP EP98303376A patent/EP0877100B1/de not_active Expired - Lifetime
- 1998-05-06 KR KR1019980016847A patent/KR100279228B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100279228B1 (ko) | 2001-02-01 |
DE69800954T2 (de) | 2001-11-22 |
EP0877100A1 (de) | 1998-11-11 |
JPH1149600A (ja) | 1999-02-23 |
EP0877100B1 (de) | 2001-06-20 |
KR19980086940A (ko) | 1998-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |