DE69733381D1 - Verfahren und Vorrichtung zur Effizienzverbesserung strahlender Energiequellen für schnelle thermische Behandlung von Substraten durch Energiereflexion - Google Patents
Verfahren und Vorrichtung zur Effizienzverbesserung strahlender Energiequellen für schnelle thermische Behandlung von Substraten durch EnergiereflexionInfo
- Publication number
- DE69733381D1 DE69733381D1 DE69733381T DE69733381T DE69733381D1 DE 69733381 D1 DE69733381 D1 DE 69733381D1 DE 69733381 T DE69733381 T DE 69733381T DE 69733381 T DE69733381 T DE 69733381T DE 69733381 D1 DE69733381 D1 DE 69733381D1
- Authority
- DE
- Germany
- Prior art keywords
- substrates
- improving
- efficiency
- thermal treatment
- rapid thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US659064 | 1996-06-03 | ||
US08/659,064 US6072160A (en) | 1996-06-03 | 1996-06-03 | Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69733381D1 true DE69733381D1 (de) | 2005-07-07 |
DE69733381T2 DE69733381T2 (de) | 2006-04-27 |
Family
ID=24643885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69733381T Expired - Fee Related DE69733381T2 (de) | 1996-06-03 | 1997-06-03 | Verfahren und Vorrichtung zur Effizienzverbesserung strahlender Energiequellen für schnelle thermische Behandlung von Substraten durch Energiereflexion |
Country Status (4)
Country | Link |
---|---|
US (1) | US6072160A (de) |
EP (1) | EP0811709B1 (de) |
JP (1) | JPH1056008A (de) |
DE (1) | DE69733381T2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7244677B2 (en) * | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
US6301435B1 (en) * | 1999-05-21 | 2001-10-09 | Kabushiki Kaisha Toshiba | Heating method |
US6471913B1 (en) | 2000-02-09 | 2002-10-29 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature |
US6780374B2 (en) | 2000-12-08 | 2004-08-24 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece at an elevated temperature |
US6507063B2 (en) * | 2000-04-17 | 2003-01-14 | International Business Machines Corporation | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer |
US6805466B1 (en) * | 2000-06-16 | 2004-10-19 | Applied Materials, Inc. | Lamphead for a rapid thermal processing chamber |
US6970644B2 (en) | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US7075037B2 (en) * | 2001-03-02 | 2006-07-11 | Tokyo Electron Limited | Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer |
EP1481114A4 (de) * | 2001-08-31 | 2005-06-22 | Semitool Inc | Vorrichtung und verfahren zur elektrochemischen verarbeitung von mikroelektronischen werkstücken |
US7147359B2 (en) * | 2004-06-25 | 2006-12-12 | Applied Materials, Inc. | Lamp assembly having flexibly positioned rigid plug |
US7043148B1 (en) | 2004-06-28 | 2006-05-09 | Novellus Systems | Wafer heating using edge-on illumination |
US7766518B2 (en) * | 2005-05-23 | 2010-08-03 | Philips Solid-State Lighting Solutions, Inc. | LED-based light-generating modules for socket engagement, and methods of assembling, installing and removing same |
US7703951B2 (en) * | 2005-05-23 | 2010-04-27 | Philips Solid-State Lighting Solutions, Inc. | Modular LED-based lighting fixtures having socket engagement features |
US7985005B2 (en) * | 2006-05-30 | 2011-07-26 | Journée Lighting, Inc. | Lighting assembly and light module for same |
WO2012108882A1 (en) | 2011-02-11 | 2012-08-16 | Alliance For Sustainable Energy, Llc | Wafer screening device and methods for wafer screening |
US7612491B2 (en) * | 2007-02-15 | 2009-11-03 | Applied Materials, Inc. | Lamp for rapid thermal processing chamber |
US8314368B2 (en) * | 2008-02-22 | 2012-11-20 | Applied Materials, Inc. | Silver reflectors for semiconductor processing chambers |
US7866850B2 (en) | 2008-02-26 | 2011-01-11 | Journée Lighting, Inc. | Light fixture assembly and LED assembly |
US8796160B2 (en) * | 2008-03-13 | 2014-08-05 | Alliance For Sustainable Energy, Llc | Optical cavity furnace for semiconductor wafer processing |
US8152336B2 (en) * | 2008-11-21 | 2012-04-10 | Journée Lighting, Inc. | Removable LED light module for use in a light fixture assembly |
WO2011019945A1 (en) | 2009-08-12 | 2011-02-17 | Journee Lighting, Inc. | Led light module for use in a lighting assembly |
US20110132877A1 (en) * | 2009-12-09 | 2011-06-09 | Lincoln Global, Inc. | Integrated shielding gas and magnetic field device for deep groove welding |
US20120181265A1 (en) * | 2010-07-15 | 2012-07-19 | Despatch Industries Limited Partnership | Firing furnace configuration for thermal processing system |
JP2012238629A (ja) * | 2011-05-10 | 2012-12-06 | Hitachi High-Technologies Corp | 熱処理装置 |
JP6038503B2 (ja) * | 2011-07-01 | 2016-12-07 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
US9565782B2 (en) | 2013-02-15 | 2017-02-07 | Ecosense Lighting Inc. | Field replaceable power supply cartridge |
US10410890B2 (en) * | 2013-06-21 | 2019-09-10 | Applied Materials, Inc. | Light pipe window structure for thermal chamber applications and processes |
KR102325891B1 (ko) | 2013-07-31 | 2021-11-15 | 에바텍 아크티엔게젤샤프트 | 복사 히터 장치 |
US10026630B2 (en) * | 2014-05-27 | 2018-07-17 | Applied Materials, Inc. | Retention and insulation features for lamp |
US10699922B2 (en) | 2014-07-25 | 2020-06-30 | Applied Materials, Inc. | Light pipe arrays for thermal chamber applications and thermal processes |
US10872790B2 (en) * | 2014-10-20 | 2020-12-22 | Applied Materials, Inc. | Optical system |
US10477636B1 (en) | 2014-10-28 | 2019-11-12 | Ecosense Lighting Inc. | Lighting systems having multiple light sources |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
US9568665B2 (en) | 2015-03-03 | 2017-02-14 | Ecosense Lighting Inc. | Lighting systems including lens modules for selectable light distribution |
US9651227B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Low-profile lighting system having pivotable lighting enclosure |
US9746159B1 (en) | 2015-03-03 | 2017-08-29 | Ecosense Lighting Inc. | Lighting system having a sealing system |
US9651216B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting systems including asymmetric lens modules for selectable light distribution |
USD785218S1 (en) | 2015-07-06 | 2017-04-25 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
USD782093S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
USD782094S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US9651232B1 (en) | 2015-08-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting system having a mounting device |
US20220364261A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Chamber architecture for epitaxial deposition and advanced epitaxial film applications |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2057776A (en) * | 1934-10-29 | 1936-10-20 | Ford Motor Co | Paint baking apparatus |
US2318533A (en) * | 1940-12-06 | 1943-05-04 | Western Electric Co | Apparatus for heating material |
US2963567A (en) | 1959-11-19 | 1960-12-06 | Otto W Roth | Heat oven of the reflector type |
US3623712A (en) * | 1969-10-15 | 1971-11-30 | Applied Materials Tech | Epitaxial radiation heated reactor and process |
US3761678A (en) * | 1971-05-03 | 1973-09-25 | Aerojet General Co | High density spherical modules |
US3862397A (en) * | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
US3936686A (en) * | 1973-05-07 | 1976-02-03 | Moore Donald W | Reflector lamp cooling and containing assemblies |
US3836751A (en) * | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
US4101759A (en) * | 1976-10-26 | 1978-07-18 | General Electric Company | Semiconductor body heater |
US4232360A (en) * | 1978-01-11 | 1980-11-04 | General Electric Company | Heat recovery high intensity discharge lamp constructions |
US4270260A (en) * | 1978-10-10 | 1981-06-02 | Krueger Ellison F | Method for the salvage and restoration of integrated circuits from a substrate |
DE3007806C2 (de) * | 1980-02-29 | 1982-09-02 | Elpag AG Chur, 7001 Chur | Elektrische Heizeinrichtung für Herde und Kochplatten |
EP0037638B1 (de) * | 1980-03-05 | 1984-05-09 | Kenwood Manufacturing Company Limited | Kochgerät |
US4378956A (en) * | 1980-06-05 | 1983-04-05 | Lester Robert W | Direct imaging of information using light pipe displays |
US4389970A (en) * | 1981-03-16 | 1983-06-28 | Energy Conversion Devices, Inc. | Apparatus for regulating substrate temperature in a continuous plasma deposition process |
US4411619A (en) * | 1981-04-02 | 1983-10-25 | Motorola, Inc. | Flange and coupling cooling means and method |
JPS58158914A (ja) * | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | 半導体製造装置 |
US4448000A (en) * | 1982-04-27 | 1984-05-15 | The United States Of America As Represented By The Secretary Of The Navy | High temperature ultra-high vacuum infrared window seal |
US4470369A (en) * | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
JPS5917253A (ja) * | 1982-07-21 | 1984-01-28 | Hitachi Ltd | 半導体ウエハの熱処理方法 |
US4489234A (en) * | 1983-03-25 | 1984-12-18 | General Electric Company | Radiant-energy heating and/or cooking apparatus with honeycomb coverplate |
JPS60727A (ja) * | 1983-06-17 | 1985-01-05 | Fujitsu Ltd | 赤外線熱処理装置 |
US4501072A (en) * | 1983-07-11 | 1985-02-26 | Amjo, Inc. | Dryer and printed material and the like |
US4680447A (en) * | 1983-08-11 | 1987-07-14 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
US4510555A (en) * | 1984-02-27 | 1985-04-09 | Kei Mori | Ornamental lighting device |
US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4581248A (en) * | 1984-03-07 | 1986-04-08 | Roche Gregory A | Apparatus and method for laser-induced chemical vapor deposition |
JPS60253939A (ja) * | 1984-05-31 | 1985-12-14 | Fujitsu Ltd | 基板温度の測定方法 |
JPS61196515A (ja) * | 1985-02-26 | 1986-08-30 | Mitsubishi Electric Corp | 帯域溶融型半導体製造装置 |
GB8514785D0 (en) * | 1985-06-11 | 1985-07-10 | Micropore International Ltd | Infra-red heaters |
US4680451A (en) * | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
US4640224A (en) * | 1985-08-05 | 1987-02-03 | Spectrum Cvd, Inc. | CVD heat source |
US4789771A (en) * | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
KR910002596B1 (ko) * | 1985-11-21 | 1991-04-27 | 다이닛뽕 스크린 세이조오 가부시기가이샤 | 온도제어방법 및 그 장치 |
US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
JPS6339930A (ja) * | 1986-08-04 | 1988-02-20 | Tokuyama Soda Co Ltd | 改良イオン交換膜の製造方法 |
US4859832A (en) * | 1986-09-08 | 1989-08-22 | Nikon Corporation | Light radiation apparatus |
US4749843A (en) * | 1986-10-14 | 1988-06-07 | Research, Inc. | Enveloping radiant heater |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4823735A (en) * | 1987-05-12 | 1989-04-25 | Gemini Research, Inc. | Reflector apparatus for chemical vapor deposition reactors |
US4836138A (en) * | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
US4832777A (en) * | 1987-07-16 | 1989-05-23 | Texas Instruments Incorporated | Processing apparatus and method |
EP0299243B1 (de) * | 1987-07-16 | 1992-08-19 | Texas Instruments Incorporated | Behandlungsapparat und Verfahren |
US4830700A (en) * | 1987-07-16 | 1989-05-16 | Texas Instruments Incorporated | Processing apparatus and method |
US4818327A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
US4832779A (en) * | 1987-07-16 | 1989-05-23 | Texas Instruments Incorporated | Processing apparatus |
US4820377A (en) * | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
US4911103A (en) * | 1987-07-17 | 1990-03-27 | Texas Instruments Incorporated | Processing apparatus and method |
US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
FR2620519B1 (fr) * | 1987-09-14 | 1990-01-19 | Lefevere Jules | Appareil de chauffage electrique |
JPH01185437A (ja) * | 1988-01-20 | 1989-07-25 | Horiba Ltd | 真空チャンバの試料加熱装置 |
JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
US4919542A (en) * | 1988-04-27 | 1990-04-24 | Ag Processing Technologies, Inc. | Emissivity correction apparatus and method |
US4956538A (en) * | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
US4891499A (en) * | 1988-09-09 | 1990-01-02 | Texas Instruments Incorporated | Method and apparatus for real-time wafer temperature uniformity control and slip-free heating in lamp heated single-wafer rapid thermal processing systems |
US5156820A (en) * | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
EP1049356A3 (de) * | 1990-01-19 | 2001-03-28 | Applied Materials, Inc. | Heizvorrichtung für Halbleiterscheiben oder Substraten |
US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
US5446824A (en) * | 1991-10-11 | 1995-08-29 | Texas Instruments | Lamp-heated chuck for uniform wafer processing |
US5332442A (en) * | 1991-11-15 | 1994-07-26 | Tokyo Electron Kabushiki Kaisha | Surface processing apparatus |
US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
KR100241290B1 (ko) * | 1992-07-09 | 2000-03-02 | 야마시타 히데나리 | 반도체 처리장치 |
US5253324A (en) * | 1992-09-29 | 1993-10-12 | North Carolina State University | Conical rapid thermal processing apparatus |
US5345534A (en) * | 1993-03-29 | 1994-09-06 | Texas Instruments Incorporated | Semiconductor wafer heater with infrared lamp module with light blocking means |
US5452396A (en) * | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
US5561735A (en) * | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
-
1996
- 1996-06-03 US US08/659,064 patent/US6072160A/en not_active Expired - Lifetime
-
1997
- 1997-06-03 EP EP97303855A patent/EP0811709B1/de not_active Expired - Lifetime
- 1997-06-03 DE DE69733381T patent/DE69733381T2/de not_active Expired - Fee Related
- 1997-06-03 JP JP9145015A patent/JPH1056008A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH1056008A (ja) | 1998-02-24 |
EP0811709A2 (de) | 1997-12-10 |
EP0811709A3 (de) | 1998-08-12 |
EP0811709B1 (de) | 2005-06-01 |
US6072160A (en) | 2000-06-06 |
DE69733381T2 (de) | 2006-04-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |