DE69728937D1 - Monolithische Halbleiteranordnung zur Verbindung eines Hochspannungsbauteil und logischer Bauteile - Google Patents

Monolithische Halbleiteranordnung zur Verbindung eines Hochspannungsbauteil und logischer Bauteile

Info

Publication number
DE69728937D1
DE69728937D1 DE69728937T DE69728937T DE69728937D1 DE 69728937 D1 DE69728937 D1 DE 69728937D1 DE 69728937 T DE69728937 T DE 69728937T DE 69728937 T DE69728937 T DE 69728937T DE 69728937 D1 DE69728937 D1 DE 69728937D1
Authority
DE
Germany
Prior art keywords
semiconductor device
voltage component
logic components
monolithic semiconductor
monolithic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69728937T
Other languages
English (en)
Other versions
DE69728937T2 (de
Inventor
Robert Pezzani
Eric Bernier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69728937D1 publication Critical patent/DE69728937D1/de
Application granted granted Critical
Publication of DE69728937T2 publication Critical patent/DE69728937T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE69728937T 1996-07-26 1997-07-24 Monolithische Halbleiteranordnung zur Verbindung eines Hochspannungsbauteils und logischer Bauteile Expired - Fee Related DE69728937T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9609682A FR2751789B1 (fr) 1996-07-26 1996-07-26 Composant monolithique associant un composant haute tension et des composants logiques
FR9609682 1996-07-26

Publications (2)

Publication Number Publication Date
DE69728937D1 true DE69728937D1 (de) 2004-06-09
DE69728937T2 DE69728937T2 (de) 2005-04-28

Family

ID=9494703

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728937T Expired - Fee Related DE69728937T2 (de) 1996-07-26 1997-07-24 Monolithische Halbleiteranordnung zur Verbindung eines Hochspannungsbauteils und logischer Bauteile

Country Status (5)

Country Link
US (1) US5982016A (de)
EP (1) EP0821410B1 (de)
JP (1) JPH1074933A (de)
DE (1) DE69728937T2 (de)
FR (1) FR2751789B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735542A1 (de) * 1997-08-16 1999-02-18 Bosch Gmbh Robert Hochspannungsbauelement und Verfahren zu seiner Herstellung
US6165868A (en) * 1999-06-04 2000-12-26 Industrial Technology Research Institute Monolithic device isolation by buried conducting walls
US7425877B2 (en) * 2001-09-21 2008-09-16 Ultrasource, Inc. Lange coupler system and method
US7781797B2 (en) * 2006-06-29 2010-08-24 International Business Machines Corporation One-transistor static random access memory with integrated vertical PNPN device
US8035126B2 (en) * 2007-10-29 2011-10-11 International Business Machines Corporation One-transistor static random access memory with integrated vertical PNPN device
FR3003085B1 (fr) * 2013-03-08 2015-03-27 Commissariat Energie Atomique Substrat semi-conducteur monolithique a base de silicium, divise en sous-cellules

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2081946B1 (de) * 1970-03-14 1975-07-04 Itt
US4546370A (en) * 1979-02-15 1985-10-08 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
JPS55154764A (en) * 1979-05-21 1980-12-02 Mitsubishi Electric Corp Heat-sensitive switching device
US4475280A (en) * 1980-12-24 1984-10-09 General Electric Company Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices
US4520277A (en) * 1982-05-10 1985-05-28 Texas Instruments Incorporated High gain thyristor switching circuit
JP2502696B2 (ja) * 1988-07-28 1996-05-29 松下電子工業株式会社 半導体集積回路装置
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.

Also Published As

Publication number Publication date
FR2751789A1 (fr) 1998-01-30
JPH1074933A (ja) 1998-03-17
EP0821410B1 (de) 2004-05-06
FR2751789B1 (fr) 1998-10-23
EP0821410A1 (de) 1998-01-28
DE69728937T2 (de) 2005-04-28
US5982016A (en) 1999-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee