DE69726774T2 - Anschlussflächenschutzstruktur mit Diode - Google Patents

Anschlussflächenschutzstruktur mit Diode Download PDF

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Publication number
DE69726774T2
DE69726774T2 DE69726774T DE69726774T DE69726774T2 DE 69726774 T2 DE69726774 T2 DE 69726774T2 DE 69726774 T DE69726774 T DE 69726774T DE 69726774 T DE69726774 T DE 69726774T DE 69726774 T2 DE69726774 T2 DE 69726774T2
Authority
DE
Germany
Prior art keywords
diode
protection structure
terminal protection
terminal
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69726774T
Other languages
English (en)
Other versions
DE69726774D1 (de
Inventor
Richard A Blanchard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Publication of DE69726774D1 publication Critical patent/DE69726774D1/de
Application granted granted Critical
Publication of DE69726774T2 publication Critical patent/DE69726774T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69726774T 1996-02-29 1997-02-27 Anschlussflächenschutzstruktur mit Diode Expired - Fee Related DE69726774T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/608,642 US5708289A (en) 1996-02-29 1996-02-29 Pad protection diode structure

Publications (2)

Publication Number Publication Date
DE69726774D1 DE69726774D1 (de) 2004-01-29
DE69726774T2 true DE69726774T2 (de) 2004-10-07

Family

ID=24437378

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726774T Expired - Fee Related DE69726774T2 (de) 1996-02-29 1997-02-27 Anschlussflächenschutzstruktur mit Diode

Country Status (4)

Country Link
US (1) US5708289A (de)
EP (1) EP0793272B1 (de)
JP (1) JPH09326472A (de)
DE (1) DE69726774T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800906B2 (en) * 2002-10-18 2004-10-05 United Microelectronics Corp. Electrostatic discharge protection circuit
US6906386B2 (en) * 2002-12-20 2005-06-14 Advanced Analogic Technologies, Inc. Testable electrostatic discharge protection circuits
KR100468787B1 (ko) * 2003-05-02 2005-01-29 삼성전자주식회사 래치-업(Ｌａｔｃｈ-ｕｐ)에 의한 전류 흐름을 방지할 수있는 반도체 장치
US7119401B2 (en) * 2004-01-07 2006-10-10 International Business Machines Corporation Tunable semiconductor diodes
JP2006128293A (ja) * 2004-10-27 2006-05-18 Matsushita Electric Ind Co Ltd 半導体集積回路の静電気保護素子
JP5270882B2 (ja) * 2007-08-30 2013-08-21 セイコーインスツル株式会社 半導体装置
JP2011077484A (ja) * 2009-10-02 2011-04-14 Sanyo Electric Co Ltd 半導体装置
JP2013073992A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065748B2 (ja) * 1981-10-05 1994-01-19 日本電気株式会社 半導体装置の静電破壊防止装置
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
JPS59134863A (ja) * 1982-12-28 1984-08-02 Fujitsu Ltd 静電破壊防止回路
JPS60233846A (ja) * 1984-05-04 1985-11-20 Sanyo Electric Co Ltd 半導体集積回路装置
GB2179494B (en) * 1985-08-09 1989-07-26 Plessey Co Plc Protection structures for integrated circuits
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
JP2579989B2 (ja) * 1988-02-23 1997-02-12 富士通株式会社 静電破壊保護装置
JPH01293560A (ja) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp 入力保護手段を有する半導体装置
FR2647959B1 (fr) * 1989-06-02 1991-09-20 Sgs Thomson Microelectronics Procede de fabrication simultanee de transistors mos a canal n et de transistors bipolaires verticaux pnp
DE58908568D1 (de) * 1989-08-18 1994-12-01 Siemens Ag Eingangsschutzstruktur für integrierte Schaltungen.
FR2693032B1 (fr) * 1992-06-25 1994-09-30 Sgs Thomson Microelectronics Structure de diodes de protection de plot.
EP0646964B1 (de) * 1993-09-30 1999-12-15 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
JP3551624B2 (ja) * 1996-06-17 2004-08-11 松下電器産業株式会社 機器の表示装置

Also Published As

Publication number Publication date
JPH09326472A (ja) 1997-12-16
EP0793272A2 (de) 1997-09-03
EP0793272B1 (de) 2003-12-17
DE69726774D1 (de) 2004-01-29
EP0793272A3 (de) 2000-09-13
US5708289A (en) 1998-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee