DE69722619D1 - Vorrichtung zur Kondensationserzeugung eines Schichtes auf einem Substrat - Google Patents

Vorrichtung zur Kondensationserzeugung eines Schichtes auf einem Substrat

Info

Publication number
DE69722619D1
DE69722619D1 DE69722619T DE69722619T DE69722619D1 DE 69722619 D1 DE69722619 D1 DE 69722619D1 DE 69722619 T DE69722619 T DE 69722619T DE 69722619 T DE69722619 T DE 69722619T DE 69722619 D1 DE69722619 D1 DE 69722619D1
Authority
DE
Germany
Prior art keywords
substrate
target
layer
generating condensation
condensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69722619T
Other languages
English (en)
Other versions
DE69722619T2 (de
Inventor
Brande Pierre Vanden
Alain Weymeersch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ArcelorMittal Liege Upstream SA
Original Assignee
Cockerill Sambre SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8228813&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69722619(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cockerill Sambre SA filed Critical Cockerill Sambre SA
Application granted granted Critical
Publication of DE69722619D1 publication Critical patent/DE69722619D1/de
Publication of DE69722619T2 publication Critical patent/DE69722619T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3428—Cathode assembly for sputtering apparatus, e.g. Target using liquid targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69722619T 1997-10-08 1997-10-08 Vorrichtung zur Kondensationserzeugung eines Schichtes auf einem Substrat Expired - Fee Related DE69722619T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97203137A EP0908924B1 (de) 1997-10-08 1997-10-08 Vorrichtung zur Kondensationserzeugung eines Schichtes auf einem Substrat

Publications (2)

Publication Number Publication Date
DE69722619D1 true DE69722619D1 (de) 2003-07-10
DE69722619T2 DE69722619T2 (de) 2004-05-13

Family

ID=8228813

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69722619T Expired - Fee Related DE69722619T2 (de) 1997-10-08 1997-10-08 Vorrichtung zur Kondensationserzeugung eines Schichtes auf einem Substrat

Country Status (7)

Country Link
EP (1) EP0908924B1 (de)
JP (1) JPH11189872A (de)
AT (1) ATE242545T1 (de)
DE (1) DE69722619T2 (de)
DK (1) DK0908924T3 (de)
ES (1) ES2200117T3 (de)
PT (1) PT908924E (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2765222C1 (ru) * 2020-12-30 2022-01-26 Тхе Баттериес Сп. з о.о. Способ формирования пленки LiCoO2 и устройство для его реализации

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1182272A1 (de) 2000-08-23 2002-02-27 Cold Plasma Applications C.P.A. Verfahren und Vorrichtung zur kontinuierlichen Kaltplasma-Abscheidung von Metallschichten
JP5410780B2 (ja) * 2009-02-18 2014-02-05 富士フイルム株式会社 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置
CN112912535B (zh) * 2018-10-24 2023-12-05 瑞士艾发科技 液体溅射目标

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01180981A (ja) * 1988-01-13 1989-07-18 Sanyo Electric Co Ltd Ｅｃｒプラズマｃｖｄ法及びその装置
JPH02250325A (ja) * 1989-03-23 1990-10-08 Mitsubishi Electric Corp プラズマ処理装置
DD284486A5 (de) * 1989-05-31 1990-11-14 Veb Hochvakuum Dresden,Dd Verfahren zur herstellung defektarmer, plasmagestuetzt abgeschiedener schichten
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
JP3222615B2 (ja) * 1993-03-31 2001-10-29 株式会社東芝 表面処理装置
BE1009838A3 (fr) * 1995-12-20 1997-10-07 Cockerill Rech & Dev Procede et dispositif pour la formation d'un revetement sur un substrat.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2765222C1 (ru) * 2020-12-30 2022-01-26 Тхе Баттериес Сп. з о.о. Способ формирования пленки LiCoO2 и устройство для его реализации

Also Published As

Publication number Publication date
DE69722619T2 (de) 2004-05-13
EP0908924A1 (de) 1999-04-14
EP0908924B1 (de) 2003-06-04
ES2200117T3 (es) 2004-03-01
ATE242545T1 (de) 2003-06-15
PT908924E (pt) 2003-09-30
JPH11189872A (ja) 1999-07-13
DK0908924T3 (da) 2003-09-29

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee