DE69709287T2 - Mustererzeugungsverfahren und Oberflächenbehandlungsmittel - Google Patents

Mustererzeugungsverfahren und Oberflächenbehandlungsmittel

Info

Publication number
DE69709287T2
DE69709287T2 DE69709287T DE69709287T DE69709287T2 DE 69709287 T2 DE69709287 T2 DE 69709287T2 DE 69709287 T DE69709287 T DE 69709287T DE 69709287 T DE69709287 T DE 69709287T DE 69709287 T2 DE69709287 T2 DE 69709287T2
Authority
DE
Germany
Prior art keywords
surface treatment
treatment agents
making methods
pattern making
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69709287T
Other languages
English (en)
Other versions
DE69709287D1 (de
Inventor
Masayuki Endo
Hiromi Ohsaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Panasonic Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Matsushita Electric Industrial Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69709287D1 publication Critical patent/DE69709287D1/de
Publication of DE69709287T2 publication Critical patent/DE69709287T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
DE69709287T 1996-10-16 1997-09-10 Mustererzeugungsverfahren und Oberflächenbehandlungsmittel Expired - Lifetime DE69709287T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27329296 1996-10-16
JP1053397 1997-01-23

Publications (2)

Publication Number Publication Date
DE69709287D1 DE69709287D1 (de) 2002-01-31
DE69709287T2 true DE69709287T2 (de) 2002-06-13

Family

ID=26345816

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709287T Expired - Lifetime DE69709287T2 (de) 1996-10-16 1997-09-10 Mustererzeugungsverfahren und Oberflächenbehandlungsmittel

Country Status (5)

Country Link
US (1) US6133465A (de)
EP (1) EP0837369B1 (de)
KR (1) KR19980032852A (de)
DE (1) DE69709287T2 (de)
TW (1) TW351834B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
US6054255A (en) * 1996-08-01 2000-04-25 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
TW351834B (en) * 1996-10-16 1999-02-01 Matsushita Electric Ind Co Ltd Method of round formation and surface treatment agent
TW392229B (en) * 1997-01-23 2000-06-01 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor device and apparatus for same
TW383416B (en) * 1997-06-26 2000-03-01 Matsushita Electric Ind Co Ltd Pattern forming method
JP5158370B2 (ja) * 2008-02-14 2013-03-06 信越化学工業株式会社 ダブルパターン形成方法
JP5007827B2 (ja) * 2008-04-04 2012-08-22 信越化学工業株式会社 ダブルパターン形成方法
KR102189379B1 (ko) * 2008-10-21 2020-12-11 도오꾜오까고오교 가부시끼가이샤 표면 처리액 및 표면 처리 방법, 그리고 소수화 처리 방법 및 소수화된 기판
WO2016021408A1 (ja) * 2014-08-07 2016-02-11 ダイキン工業株式会社 防汚処理組成物、処理装置、処理方法および処理物品
KR102125344B1 (ko) * 2015-04-10 2020-06-22 다이킨 고교 가부시키가이샤 방오 처리 조성물, 처리 장치, 처리 방법 및 처리 물품

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4051164A (en) * 1975-02-14 1977-09-27 General Foods Corporation Enol ester of α-diketones
JPS58188132A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd レジストと基板との密着性強化方法
US4535054A (en) * 1983-05-05 1985-08-13 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography
US4902812A (en) * 1986-07-31 1990-02-20 Nissan Chemical Industries, Ltd. Optically active alcohols, process for producing the same, and process for resolving the same
US4732858A (en) * 1986-09-17 1988-03-22 Brewer Science, Inc. Adhesion promoting product and process for treating an integrated circuit substrate
EP0278996A1 (de) * 1987-02-17 1988-08-24 Ibm Deutschland Gmbh Verfahren zur Verbesserung der Haftung von Photoresistmaterialien
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
CA2037538A1 (en) * 1990-03-12 1991-09-13 John A. T. Norman Fluorinated beta-ketoiminato metal complexes
US5091290A (en) * 1990-12-03 1992-02-25 Micron Technology, Inc. Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
JPH05150459A (ja) * 1991-05-24 1993-06-18 Nippon Paint Co Ltd レジストパターンの形成方法
JP3424835B2 (ja) * 1991-12-27 2003-07-07 松下電器産業株式会社 カラー固体撮像装置およびカラーフィルタ
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
JPH06350000A (ja) * 1993-06-04 1994-12-22 Hitachi Ltd リードフレームの表面処理剤およびそれを用いた半導体集積回路装置の製造方法
KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
EP0792195A4 (de) * 1994-11-22 1999-05-26 Complex Fluid Systems Inc Nichtaminische photoresiste adhesionspromoter für mikroelektronische anwendungen
US6258972B1 (en) * 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
TW351834B (en) * 1996-10-16 1999-02-01 Matsushita Electric Ind Co Ltd Method of round formation and surface treatment agent

Also Published As

Publication number Publication date
TW351834B (en) 1999-02-01
EP0837369A1 (de) 1998-04-22
KR19980032852A (ko) 1998-07-25
DE69709287D1 (de) 2002-01-31
EP0837369B1 (de) 2001-12-19
US6133465A (en) 2000-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

Owner name: SHIN-ETSU CHEMICAL CO., LTD., TOKIO/TOKYO, JP