DE69709018T2 - Oxid-Einkristall und Verfahren zu seiner Herstellung - Google Patents

Oxid-Einkristall und Verfahren zu seiner Herstellung

Info

Publication number
DE69709018T2
DE69709018T2 DE69709018T DE69709018T DE69709018T2 DE 69709018 T2 DE69709018 T2 DE 69709018T2 DE 69709018 T DE69709018 T DE 69709018T DE 69709018 T DE69709018 T DE 69709018T DE 69709018 T2 DE69709018 T2 DE 69709018T2
Authority
DE
Germany
Prior art keywords
manufacture
single crystal
crystal oxide
oxide
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69709018T
Other languages
English (en)
Other versions
DE69709018D1 (de
Inventor
Hiroshi Takagi
Makoto Kumatoriva
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of DE69709018D1 publication Critical patent/DE69709018D1/de
Application granted granted Critical
Publication of DE69709018T2 publication Critical patent/DE69709018T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Insulating Materials (AREA)
DE69709018T 1996-10-02 1997-09-11 Oxid-Einkristall und Verfahren zu seiner Herstellung Expired - Fee Related DE69709018T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28167996A JP3183192B2 (ja) 1996-10-02 1996-10-02 酸化物単結晶の製造方法および酸化物単結晶

Publications (2)

Publication Number Publication Date
DE69709018D1 DE69709018D1 (de) 2002-01-24
DE69709018T2 true DE69709018T2 (de) 2002-07-18

Family

ID=17642481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709018T Expired - Fee Related DE69709018T2 (de) 1996-10-02 1997-09-11 Oxid-Einkristall und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (1) US5900054A (de)
EP (1) EP0834605B1 (de)
JP (1) JP3183192B2 (de)
KR (1) KR100220183B1 (de)
CN (1) CN1083498C (de)
DE (1) DE69709018T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030075504A (ko) * 2002-03-19 2003-09-26 안정오 진동자에 의한 금 또는 은용액 파동수제조방법 및 그 장치
CN100529199C (zh) * 2007-01-25 2009-08-19 中国科学院上海硅酸盐研究所 一类压电单晶体及其生长方法
JP6883383B2 (ja) * 2015-12-28 2021-06-09 株式会社福田結晶技術研究所 ＳｃＡｌＭｇＯ４単結晶の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650702A (en) * 1970-04-15 1972-03-21 Gen Motors Corp Crystal growth of tetragonal germanium dioxide from a flux
JPS5933560B2 (ja) * 1981-01-23 1984-08-16 日立化成工業株式会社 Ｂｉ↓４Ｇｅ↓３Ｏ↓１↓２単結晶の製造方法
AU595142B2 (en) * 1988-01-11 1990-03-22 American Telephone And Telegraph Company Method of making a body, and article comprising the body
EP0559921B1 (de) * 1991-09-19 2000-02-09 Japan Science and Technology Corporation Verfahren und vorrichtung zum herstellen von einkristallhalbleitern mit hohem spaltdissoranteil
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth

Also Published As

Publication number Publication date
CN1083498C (zh) 2002-04-24
KR19980032455A (ko) 1998-07-25
JP3183192B2 (ja) 2001-07-03
DE69709018D1 (de) 2002-01-24
EP0834605A1 (de) 1998-04-08
US5900054A (en) 1999-05-04
CN1178264A (zh) 1998-04-08
JPH10101494A (ja) 1998-04-21
KR100220183B1 (en) 1999-09-01
EP0834605B1 (de) 2001-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee