DE69636161D1 - MOS-Kapazität mit breiten Spannungs- und Frequenzbetriebsbereichen - Google Patents
MOS-Kapazität mit breiten Spannungs- und FrequenzbetriebsbereichenInfo
- Publication number
- DE69636161D1 DE69636161D1 DE69636161T DE69636161T DE69636161D1 DE 69636161 D1 DE69636161 D1 DE 69636161D1 DE 69636161 T DE69636161 T DE 69636161T DE 69636161 T DE69636161 T DE 69636161T DE 69636161 D1 DE69636161 D1 DE 69636161D1
- Authority
- DE
- Germany
- Prior art keywords
- operating ranges
- wide voltage
- frequency operating
- mos capacity
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96830420A EP0822601B1 (de) | 1996-07-30 | 1996-07-30 | MOS-Kapazität mit breiten Spannungs- und Frequenzbetriebsbereichen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69636161D1 true DE69636161D1 (de) | 2006-06-29 |
Family
ID=8225974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69636161T Expired - Lifetime DE69636161D1 (de) | 1996-07-30 | 1996-07-30 | MOS-Kapazität mit breiten Spannungs- und Frequenzbetriebsbereichen |
Country Status (3)
Country | Link |
---|---|
US (1) | US6590247B2 (de) |
EP (1) | EP0822601B1 (de) |
DE (1) | DE69636161D1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030058022A1 (en) * | 1999-12-14 | 2003-03-27 | Rajendran Nair | Device and method for controlling voltage variation |
US6828654B2 (en) * | 2001-12-27 | 2004-12-07 | Broadcom Corporation | Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same |
US20040206999A1 (en) * | 2002-05-09 | 2004-10-21 | Impinj, Inc., A Delaware Corporation | Metal dielectric semiconductor floating gate variable capacitor |
EP1553636B1 (de) | 2003-03-03 | 2013-05-01 | Fujitsu Semiconductor Limited | Variables mos-kapazitätsbauelement |
US6825089B1 (en) * | 2003-06-04 | 2004-11-30 | Agere Systems Inc. | Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well |
JP2007096036A (ja) * | 2005-09-29 | 2007-04-12 | Matsushita Electric Ind Co Ltd | 昇圧回路 |
TWI405414B (zh) * | 2006-07-11 | 2013-08-11 | Jinnshyan Wang | 差分式高速動態相位偵測器 |
US20080061838A1 (en) * | 2006-09-11 | 2008-03-13 | Jinn-Shyan Wang | Differential-type high-speed phase detector |
EP2383781A1 (de) | 2010-04-19 | 2011-11-02 | Dialog Semiconductor B.V. | MOS-Kondensatorstruktur mit linearer Kapazitäts-Spannungs-Kurve |
US8884241B2 (en) * | 2011-09-08 | 2014-11-11 | Freescale Semiconductor, Inc. | Incident capacitive sensor |
US8933711B2 (en) | 2011-09-08 | 2015-01-13 | Freescale Semiconductor, Inc. | Capacitive sensor radiation measurement |
US9318485B2 (en) * | 2012-08-10 | 2016-04-19 | Infineon Technologies Ag | Capacitor arrangements and method for manufacturing a capacitor arrangement |
US9711516B2 (en) * | 2015-10-30 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Non-volatile memory having a gate-layered triple well structure |
TWI662713B (zh) * | 2017-10-05 | 2019-06-11 | 世界先進積體電路股份有限公司 | 半導體裝置以及其製造方法 |
US10680120B2 (en) | 2018-04-05 | 2020-06-09 | Vanguard International Semiconductor Corporation | Semiconductor device and method for manufacturing the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3612964A (en) | 1969-01-06 | 1971-10-12 | Mitsubishi Electric Corp | Mis-type variable capacitance semiconductor device |
US4001869A (en) | 1975-06-09 | 1977-01-04 | Sprague Electric Company | Mos-capacitor for integrated circuits |
JPS52102690A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Semiconductor capacitance device |
JPS5819143B2 (ja) | 1977-09-30 | 1983-04-16 | 株式会社東芝 | 半導体メモリ装置 |
JPS5685848A (en) * | 1979-12-15 | 1981-07-13 | Toshiba Corp | Manufacture of bipolar integrated circuit |
JPS58159367A (ja) * | 1982-03-17 | 1983-09-21 | Matsushita Electronics Corp | Mos容量装置 |
US4704625A (en) * | 1982-08-05 | 1987-11-03 | Motorola, Inc. | Capacitor with reduced voltage variability |
JP2740038B2 (ja) | 1990-06-18 | 1998-04-15 | 株式会社東芝 | Mos(mis)型コンデンサー |
JPH04112564A (ja) * | 1990-08-31 | 1992-04-14 | Nec Ic Microcomput Syst Ltd | 半導体装置 |
KR950009815B1 (ko) | 1991-12-23 | 1995-08-28 | 삼성전자주식회사 | 트리플웰 구조를 가지는 고집적 반도체 메모리 장치 |
US5341009A (en) * | 1993-07-09 | 1994-08-23 | Harris Corporation | Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity |
JP3510335B2 (ja) | 1994-07-18 | 2004-03-29 | 株式会社ルネサステクノロジ | 半導体記憶装置、内部電源電圧発生回路、内部高電圧発生回路、中間電圧発生回路、定電流源、および基準電圧発生回路 |
-
1996
- 1996-07-30 DE DE69636161T patent/DE69636161D1/de not_active Expired - Lifetime
- 1996-07-30 EP EP96830420A patent/EP0822601B1/de not_active Expired - Lifetime
-
2001
- 2001-07-27 US US09/916,954 patent/US6590247B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0822601B1 (de) | 2006-05-24 |
US20010042879A1 (en) | 2001-11-22 |
US6590247B2 (en) | 2003-07-08 |
EP0822601A1 (de) | 1998-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |