DE69631917T2 - Magnetsensor mit einem Riesenmagnetowiderstand und sein Herstellungsverfahren - Google Patents

Magnetsensor mit einem Riesenmagnetowiderstand und sein Herstellungsverfahren Download PDF

Info

Publication number
DE69631917T2
DE69631917T2 DE69631917T DE69631917T DE69631917T2 DE 69631917 T2 DE69631917 T2 DE 69631917T2 DE 69631917 T DE69631917 T DE 69631917T DE 69631917 T DE69631917 T DE 69631917T DE 69631917 T2 DE69631917 T2 DE 69631917T2
Authority
DE
Germany
Prior art keywords
layer
magnetization
magnetic
layers
sensor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69631917T
Other languages
German (de)
English (en)
Other versions
DE69631917D1 (de
Inventor
Bernard Dieny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69631917D1 publication Critical patent/DE69631917D1/de
Application granted granted Critical
Publication of DE69631917T2 publication Critical patent/DE69631917T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
DE69631917T 1995-01-24 1996-01-22 Magnetsensor mit einem Riesenmagnetowiderstand und sein Herstellungsverfahren Expired - Lifetime DE69631917T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9500763 1995-01-24
FR9500763A FR2729790A1 (fr) 1995-01-24 1995-01-24 Magnetoresistance geante, procede de fabrication et application a un capteur magnetique

Publications (2)

Publication Number Publication Date
DE69631917D1 DE69631917D1 (de) 2004-04-29
DE69631917T2 true DE69631917T2 (de) 2005-01-20

Family

ID=9475421

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69631917T Expired - Lifetime DE69631917T2 (de) 1995-01-24 1996-01-22 Magnetsensor mit einem Riesenmagnetowiderstand und sein Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5677625A (enExample)
EP (1) EP0724302B1 (enExample)
JP (1) JP3949745B2 (enExample)
DE (1) DE69631917T2 (enExample)
FR (1) FR2729790A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124711A (en) * 1996-01-19 2000-09-26 Fujitsu Limited Magnetic sensor using tunnel resistance to detect an external magnetic field
JP2924785B2 (ja) * 1996-04-25 1999-07-26 日本電気株式会社 磁気抵抗効果素子薄膜及びその製造方法
US5705973A (en) * 1996-08-26 1998-01-06 Read-Rite Corporation Bias-free symmetric dual spin valve giant magnetoresistance transducer
JP2937237B2 (ja) * 1997-01-22 1999-08-23 日本電気株式会社 磁気抵抗効果ヘッドおよびその初期化方法
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
US6108166A (en) * 1998-03-12 2000-08-22 Read-Rite Corporation Current-pinned spin valve sensor
JP3075253B2 (ja) * 1998-03-31 2000-08-14 日本電気株式会社 スピンバルブ型感磁素子及びこれを用いた磁気ヘッド並びに磁気ディスク装置
DE19830344C2 (de) * 1998-07-07 2003-04-10 Ipht Jena Inst Fuer Physikalis Verfahren zum Einstellen der Magnetisierung der Biasschicht eines magneto-resistiven Sensorelements, demgemäß bearbeitetes Sensorelement sowie zur Durchführung des Verfahrens geeignetes Sensorsubstrat
JP2000040212A (ja) 1998-07-24 2000-02-08 Alps Electric Co Ltd スピンバルブ型薄膜素子
JP2002522866A (ja) * 1998-08-14 2002-07-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ スピントンネル接合素子を具える磁界センサ
US6252796B1 (en) * 1998-08-14 2001-06-26 U.S. Philips Corporation Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
DE10036356C2 (de) * 1999-08-10 2002-03-14 Inst Physikalische Hochtech Ev Magnetisches Dünnschichtbauelement
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6447935B1 (en) 1999-11-23 2002-09-10 Read-Rite Corporation Method and system for reducing assymetry in a spin valve having a synthetic pinned layer
US6650509B2 (en) 2001-03-20 2003-11-18 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with AP pinned layers
US6724586B2 (en) 2001-03-27 2004-04-20 Hitachi Global Storage Technologies Netherlands B.V. Bias structure for magnetic tunnel junction magnetoresistive sensor
US7390584B2 (en) * 2002-03-27 2008-06-24 Nve Corporation Spin dependent tunneling devices having reduced topological coupling
US7239123B2 (en) * 2003-10-09 2007-07-03 Hewlett-Packard Development Company, L.P. Multiplexed dual-purpose magnetoresistive sensor and method of measuring current and temperature
DE102005047413B8 (de) * 2005-02-23 2012-05-10 Infineon Technologies Ag Magnetfeldsensorelement und Verfahren zum Durchführen eines On-Wafer-Funktionstests, sowie Verfahren zur Herstellung von Magnetfeldsensorelementen und Verfahren zur Herstellung von Magnetfeldsensorelementen mit On-Wafer-Funktionstest
US8860159B2 (en) 2011-10-20 2014-10-14 The United States Of America As Represented By The Secretary Of The Army Spintronic electronic device and circuits
EP2788780A1 (en) 2011-12-05 2014-10-15 Advanced Microsensors Corporation Magnetic field sensing apparatus and methods
JP6003371B2 (ja) * 2012-08-07 2016-10-05 Tdk株式会社 回転磁界センサ
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
EP3300534B1 (en) 2015-06-05 2020-11-11 Allegro MicroSystems, LLC Spin valve magnetoresistance element with improved response to magnetic fields
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3820475C1 (enExample) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
FR2685489B1 (fr) * 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
JP3207477B2 (ja) * 1991-12-24 2001-09-10 財団法人生産開発科学研究所 磁気抵抗効果素子
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
FR2698965B1 (fr) * 1992-12-03 1995-01-06 Commissariat Energie Atomique Structure et capteur magnétiques multicouches à forte magnétorésistance et procédé de fabrication de la structure.
US5422571A (en) * 1993-02-08 1995-06-06 International Business Machines Corporation Magnetoresistive spin valve sensor having a nonmagnetic back layer
JP2784457B2 (ja) * 1993-06-11 1998-08-06 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ装置
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor

Also Published As

Publication number Publication date
FR2729790A1 (fr) 1996-07-26
FR2729790B1 (enExample) 1997-02-21
DE69631917D1 (de) 2004-04-29
US5677625A (en) 1997-10-14
EP0724302B1 (fr) 2004-03-24
JP3949745B2 (ja) 2007-07-25
JPH0936456A (ja) 1997-02-07
EP0724302A1 (fr) 1996-07-31

Similar Documents

Publication Publication Date Title
EP0674769B1 (de) Magnetowiderstands-sensor mit künstlichem antiferromagneten und verfahren zu seiner herstellung
DE69132027T2 (de) Magnetoresistiver Fühler
DE69106334T2 (de) Mehrsicht Film mit magnetoresistiven Effekt und magnetoresitives Element.
DE69534013T2 (de) Magnetfeldfühler und Verfahren zu ihrer Herstellung
DE69932800T2 (de) Anordnung mit einer ersten und einer zweiten ferromagnetischen schicht getrennt durch eine nicht-magnetische abstandsschicht
DE69233139T2 (de) Magnetowiderstandseffekt-Element und Magnetowiderstandseffekt-Fühler
DE69901790T2 (de) Tunneleffekt-magnetowiderstand und anwendung eines solchen magnetowiderstands in einem magnetischen sensor
JP3949745B2 (ja) 磁気センサおよびその製造工程
DE69826090T2 (de) Magnetische Tunnelübergangseinrichtung mit verbesserten ferromagnetischen Schichten
DE19528245B4 (de) Magneto-Widerstandskopf und dessen Verwendung in einer Magnetaufzeichnungsvorrichtung
DE3820475C1 (enExample)
DE69407158T2 (de) Magnetoresistive anordnung und diese verwendender magnetkopf
DE69623577T2 (de) Mehrschichtstruktur und Sensor sowie Herstellungsverfahren
DE69504923T2 (de) Magnetwiderstands-Sensor mit selbstpolarisiertem Mehrschichtsystem
EP0674770B1 (de) Magnetowiderstands-sensor mit verkürzten messschichten
DE19520206C2 (de) Magnetfeldsensor mit einer Brückenschaltung von magnetoresistiven Brückenelementen
DE69327367T2 (de) Magnetoresistiver Wandler
EP1417690B1 (de) Schichtensystem mit erhöhtem magnetoresistiven effekt sowie verwendung desselben
DE4232244C2 (de) Magnetowiderstands-Sensor
DE69934868T2 (de) Magnetischer mehrschichtsensor
DE102019113815B4 (de) Magnetsensor
DE69407194T2 (de) Magnetoresistiver stromsensor und verfahren zu seiner herstellung
DE69825031T2 (de) Magnetfeldsensor mit spin tunnelübergang
DE69412649T2 (de) Magnetoresistiver fühler
DE10128135A1 (de) Magnetoresistive Schichtanordnung und Gradiometer mit einer derartigen Schichtanordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition