DE69631917D1 - Magnetsensor mit einem Riesenmagnetowiderstand und sein Herstellungsverfahren - Google Patents
Magnetsensor mit einem Riesenmagnetowiderstand und sein HerstellungsverfahrenInfo
- Publication number
- DE69631917D1 DE69631917D1 DE69631917T DE69631917T DE69631917D1 DE 69631917 D1 DE69631917 D1 DE 69631917D1 DE 69631917 T DE69631917 T DE 69631917T DE 69631917 T DE69631917 T DE 69631917T DE 69631917 D1 DE69631917 D1 DE 69631917D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- magnetic sensor
- giant magnetoresistor
- magnetoresistor
- giant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9500763A FR2729790A1 (fr) | 1995-01-24 | 1995-01-24 | Magnetoresistance geante, procede de fabrication et application a un capteur magnetique |
FR9500763 | 1995-01-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69631917D1 true DE69631917D1 (de) | 2004-04-29 |
DE69631917T2 DE69631917T2 (de) | 2005-01-20 |
Family
ID=9475421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69631917T Expired - Lifetime DE69631917T2 (de) | 1995-01-24 | 1996-01-22 | Magnetsensor mit einem Riesenmagnetowiderstand und sein Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5677625A (de) |
EP (1) | EP0724302B1 (de) |
JP (1) | JP3949745B2 (de) |
DE (1) | DE69631917T2 (de) |
FR (1) | FR2729790A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19701509C2 (de) * | 1996-01-19 | 2003-08-21 | Fujitsu Ltd | Magnetsensoren |
JP2924785B2 (ja) * | 1996-04-25 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果素子薄膜及びその製造方法 |
US5705973A (en) * | 1996-08-26 | 1998-01-06 | Read-Rite Corporation | Bias-free symmetric dual spin valve giant magnetoresistance transducer |
JP2937237B2 (ja) * | 1997-01-22 | 1999-08-23 | 日本電気株式会社 | 磁気抵抗効果ヘッドおよびその初期化方法 |
US5748399A (en) * | 1997-05-13 | 1998-05-05 | International Business Machines Corporation | Resettable symmetric spin valve |
US6108166A (en) * | 1998-03-12 | 2000-08-22 | Read-Rite Corporation | Current-pinned spin valve sensor |
JP3075253B2 (ja) * | 1998-03-31 | 2000-08-14 | 日本電気株式会社 | スピンバルブ型感磁素子及びこれを用いた磁気ヘッド並びに磁気ディスク装置 |
DE19830344C2 (de) * | 1998-07-07 | 2003-04-10 | Ipht Jena Inst Fuer Physikalis | Verfahren zum Einstellen der Magnetisierung der Biasschicht eines magneto-resistiven Sensorelements, demgemäß bearbeitetes Sensorelement sowie zur Durchführung des Verfahrens geeignetes Sensorsubstrat |
JP2000040212A (ja) | 1998-07-24 | 2000-02-08 | Alps Electric Co Ltd | スピンバルブ型薄膜素子 |
US6252796B1 (en) * | 1998-08-14 | 2001-06-26 | U.S. Philips Corporation | Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer |
WO2000010023A1 (en) * | 1998-08-14 | 2000-02-24 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a spin tunneling junction element |
DE10036356C2 (de) * | 1999-08-10 | 2002-03-14 | Inst Physikalische Hochtech Ev | Magnetisches Dünnschichtbauelement |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6447935B1 (en) | 1999-11-23 | 2002-09-10 | Read-Rite Corporation | Method and system for reducing assymetry in a spin valve having a synthetic pinned layer |
US6650509B2 (en) | 2001-03-20 | 2003-11-18 | Hitachi Global Storage Technologies Netherlands B.V. | Dual spin valve sensor with AP pinned layers |
US6724586B2 (en) | 2001-03-27 | 2004-04-20 | Hitachi Global Storage Technologies Netherlands B.V. | Bias structure for magnetic tunnel junction magnetoresistive sensor |
US7390584B2 (en) * | 2002-03-27 | 2008-06-24 | Nve Corporation | Spin dependent tunneling devices having reduced topological coupling |
US7239123B2 (en) * | 2003-10-09 | 2007-07-03 | Hewlett-Packard Development Company, L.P. | Multiplexed dual-purpose magnetoresistive sensor and method of measuring current and temperature |
DE102005047413B8 (de) * | 2005-02-23 | 2012-06-06 | Infineon Technologies Ag | Magnetfeldsensorelement und Verfahren zum Durchführen eines On-Wafer-Funktionstests, sowie Verfahren zur Herstellung von Magnetfeldsensorelementen und Verfahren zur Herstellung von Magnetfeldsensorelementen mit On-Wafer-Funktionstest |
US8860159B2 (en) | 2011-10-20 | 2014-10-14 | The United States Of America As Represented By The Secretary Of The Army | Spintronic electronic device and circuits |
US9470764B2 (en) | 2011-12-05 | 2016-10-18 | Hercules Technology Growth Capital, Inc. | Magnetic field sensing apparatus and methods |
JP6003371B2 (ja) * | 2012-08-07 | 2016-10-05 | Tdk株式会社 | 回転磁界センサ |
US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US9812637B2 (en) | 2015-06-05 | 2017-11-07 | Allegro Microsystems, Llc | Spin valve magnetoresistance element with improved response to magnetic fields |
US10620279B2 (en) | 2017-05-19 | 2020-04-14 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11022661B2 (en) | 2017-05-19 | 2021-06-01 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3820475C1 (de) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
FR2685489B1 (fr) * | 1991-12-23 | 1994-08-05 | Thomson Csf | Capteur de champ magnetique faible a effet magnetoresistif. |
JP3207477B2 (ja) * | 1991-12-24 | 2001-09-10 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
JP3022023B2 (ja) * | 1992-04-13 | 2000-03-15 | 株式会社日立製作所 | 磁気記録再生装置 |
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
FR2698965B1 (fr) * | 1992-12-03 | 1995-01-06 | Commissariat Energie Atomique | Structure et capteur magnétiques multicouches à forte magnétorésistance et procédé de fabrication de la structure. |
US5422571A (en) * | 1993-02-08 | 1995-06-06 | International Business Machines Corporation | Magnetoresistive spin valve sensor having a nonmagnetic back layer |
JP2784457B2 (ja) * | 1993-06-11 | 1998-08-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ装置 |
US5465185A (en) * | 1993-10-15 | 1995-11-07 | International Business Machines Corporation | Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor |
-
1995
- 1995-01-24 FR FR9500763A patent/FR2729790A1/fr active Granted
-
1996
- 1996-01-22 EP EP96400139A patent/EP0724302B1/de not_active Expired - Lifetime
- 1996-01-22 US US08/589,844 patent/US5677625A/en not_active Expired - Lifetime
- 1996-01-22 DE DE69631917T patent/DE69631917T2/de not_active Expired - Lifetime
- 1996-01-24 JP JP02872096A patent/JP3949745B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3949745B2 (ja) | 2007-07-25 |
EP0724302A1 (de) | 1996-07-31 |
US5677625A (en) | 1997-10-14 |
DE69631917T2 (de) | 2005-01-20 |
FR2729790B1 (de) | 1997-02-21 |
JPH0936456A (ja) | 1997-02-07 |
FR2729790A1 (fr) | 1996-07-26 |
EP0724302B1 (de) | 2004-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |