DE69626732D1 - Verfahren und Vorrichtung zum Entfernen von Kontaminationsstoffen von Ionenstrahl-Neutralisierungsgeräten - Google Patents

Verfahren und Vorrichtung zum Entfernen von Kontaminationsstoffen von Ionenstrahl-Neutralisierungsgeräten

Info

Publication number
DE69626732D1
DE69626732D1 DE69626732T DE69626732T DE69626732D1 DE 69626732 D1 DE69626732 D1 DE 69626732D1 DE 69626732 T DE69626732 T DE 69626732T DE 69626732 T DE69626732 T DE 69626732T DE 69626732 D1 DE69626732 D1 DE 69626732D1
Authority
DE
Germany
Prior art keywords
ion beam
removing contaminants
beam neutralization
neutralization devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69626732T
Other languages
English (en)
Other versions
DE69626732T2 (de
Inventor
Julian Gaskill Blake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE69626732D1 publication Critical patent/DE69626732D1/de
Application granted granted Critical
Publication of DE69626732T2 publication Critical patent/DE69626732T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004Charge control of objects or beams
    • H01J2237/0041Neutralising arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31701Ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cleaning In General (AREA)
DE69626732T 1995-08-28 1996-08-15 Verfahren und Vorrichtung zum Entfernen von Kontaminationsstoffen von Ionenstrahl-Neutralisierungsgeräten Expired - Fee Related DE69626732T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/519,708 US5633506A (en) 1995-07-17 1995-08-28 Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses
US519708 1995-08-28

Publications (2)

Publication Number Publication Date
DE69626732D1 true DE69626732D1 (de) 2003-04-24
DE69626732T2 DE69626732T2 (de) 2004-02-05

Family

ID=24069431

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69626732T Expired - Fee Related DE69626732T2 (de) 1995-08-28 1996-08-15 Verfahren und Vorrichtung zum Entfernen von Kontaminationsstoffen von Ionenstrahl-Neutralisierungsgeräten

Country Status (8)

Country Link
US (1) US5633506A (de)
EP (1) EP0762469B1 (de)
JP (1) JP4013083B2 (de)
KR (1) KR100292084B1 (de)
CN (1) CN1097301C (de)
CA (1) CA2181076C (de)
DE (1) DE69626732T2 (de)
TW (1) TW317639B (de)

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US5959305A (en) * 1998-06-19 1999-09-28 Eaton Corporation Method and apparatus for monitoring charge neutralization operation
US6221169B1 (en) * 1999-05-10 2001-04-24 Axcelis Technologies, Inc. System and method for cleaning contaminated surfaces in an ion implanter
US6259105B1 (en) * 1999-05-10 2001-07-10 Axcelis Technologies, Inc. System and method for cleaning silicon-coated surfaces in an ion implanter
EP1145274A1 (de) * 1999-10-15 2001-10-17 Philips Electron Optics B.V. Korpuskularoptisches gerät
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
WO2001043157A1 (en) * 1999-12-13 2001-06-14 Semequip, Inc. Ion implantation ion source, system and method
US6559462B1 (en) 2000-10-31 2003-05-06 International Business Machines Corporation Method to reduce downtime while implanting GeF4
US6576909B2 (en) 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US7026611B2 (en) * 2001-05-01 2006-04-11 Battelle Energy Alliance, Llc Analytical instruments, ionization sources, and ionization methods
JP4374487B2 (ja) * 2003-06-06 2009-12-02 株式会社Sen イオン源装置およびそのクリーニング最適化方法
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
CN1894763B (zh) * 2003-12-12 2010-12-08 山米奎普公司 用于在离子植入中延长设备正常运行时间的方法及装置
US7078710B2 (en) * 2004-06-15 2006-07-18 International Business Machines Corporation Ion beam system
US7078689B1 (en) * 2004-10-25 2006-07-18 Kla-Tencor Technologies Corporation Integrated electron beam and contaminant removal system
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7173260B2 (en) * 2004-12-22 2007-02-06 Axcelis Technologies, Inc. Removing byproducts of physical and chemical reactions in an ion implanter
US6992311B1 (en) * 2005-01-18 2006-01-31 Axcelis Technologies, Inc. In-situ cleaning of beam defining apertures in an ion implanter
US20070278417A1 (en) * 2005-07-01 2007-12-06 Horsky Thomas N Ion implantation ion source, system and method
US8092641B1 (en) * 2005-08-08 2012-01-10 Hermes-Microvision, Inc. System and method for removing organic residue from a charged particle beam system
JP2007225363A (ja) * 2006-02-22 2007-09-06 Hitachi Ltd 磁気試料検査装置
CN101473073B (zh) 2006-04-26 2012-08-08 高级技术材料公司 半导体加工系统的清洁
US20090014644A1 (en) * 2007-07-13 2009-01-15 Inficon, Inc. In-situ ion source cleaning for partial pressure analyzers used in process monitoring
WO2009039382A1 (en) * 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
KR101755970B1 (ko) 2008-02-11 2017-07-07 엔테그리스, 아이엔씨. 이온 공급원 챔버를 포함하는 이온 주입 시스템의 성능 향상 및 수명 연장 방법
US8003956B2 (en) * 2008-10-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
JP5390330B2 (ja) * 2008-10-16 2014-01-15 キヤノンアネルバ株式会社 基板処理装置およびそのクリーニング方法
US8604418B2 (en) * 2010-04-06 2013-12-10 Axcelis Technologies, Inc. In-vacuum beam defining aperture cleaning for particle reduction
CN105097460A (zh) * 2014-05-09 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种解决离子注入机路径污染的方法
US10522330B2 (en) * 2015-06-12 2019-12-31 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber components
CN105097398A (zh) * 2015-08-26 2015-11-25 成都森蓝光学仪器有限公司 水冷环形热阴极离子源中和器
US20170092473A1 (en) * 2015-09-28 2017-03-30 Varian Semiconductor Equipment Associates, Inc. In-situ plasma cleaning of process chamber electrostatic elements having varied geometries
WO2017117053A1 (en) * 2015-12-27 2017-07-06 Entegris, Inc. Improving ion implant plasma flood gun (prg) performance by using trace insitu cleaning gas in sputtering gas mixture
EP3285278A1 (de) * 2016-08-16 2018-02-21 FEI Company Mit einem plasmareiniger verwendeter magnet
US10730082B2 (en) * 2016-10-26 2020-08-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for differential in situ cleaning
US10410844B2 (en) * 2016-12-09 2019-09-10 Varian Semiconductor Equipment Associates, Inc. RF clean system for electrostatic elements
TWI795448B (zh) * 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
CN113663988B (zh) * 2018-10-18 2023-09-05 汉辰科技股份有限公司 清理离子布植机内部氟化表面的方法及装置
JP6976628B2 (ja) 2019-03-25 2021-12-08 アトナープ株式会社 ガス分析装置及びガス分析装置の制御方法
CN113529041B (zh) * 2021-07-13 2023-03-14 中国工程物理研究院流体物理研究所 抑制绝缘介质材料二次电子发射的离子束注入装置及方法

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WO1984003798A1 (en) * 1983-03-18 1984-09-27 Matsushita Electric Ind Co Ltd Reactive ion etching apparatus
US4665315A (en) * 1985-04-01 1987-05-12 Control Data Corporation Method and apparatus for in-situ plasma cleaning of electron beam optical systems
US4693760A (en) * 1986-05-12 1987-09-15 Spire Corporation Ion implanation of titanium workpieces without surface discoloration
KR900005118B1 (ko) * 1986-07-14 1990-07-19 미쓰비시전기주식회사 박막 형성장치
US4764394A (en) * 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter
JP2717822B2 (ja) * 1988-11-21 1998-02-25 住友イートンノバ株式会社 イオン注入装置
US4987933A (en) * 1989-03-03 1991-01-29 Eaton Corporation Fluid flow control method and apparatus for minimizing particle contamination
DE69128345T2 (de) * 1990-01-04 1998-03-26 Mattson Tech Inc Induktiver plasmareaktor im unteren hochfrequenzbereich
US5466942A (en) * 1991-07-04 1995-11-14 Kabushiki Kaisha Toshiba Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
US5308989A (en) * 1992-12-22 1994-05-03 Eaton Corporation Fluid flow control method and apparatus for an ion implanter
EP0648861A1 (de) * 1993-10-15 1995-04-19 Applied Materials, Inc. Anlage zur Behandlung von Halbleitern
US5427621A (en) * 1993-10-29 1995-06-27 Applied Materials, Inc. Method for removing particulate contaminants by magnetic field spiking
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter

Also Published As

Publication number Publication date
CA2181076A1 (en) 1997-03-01
EP0762469B1 (de) 2003-03-19
CN1147690A (zh) 1997-04-16
TW317639B (de) 1997-10-11
JP4013083B2 (ja) 2007-11-28
CN1097301C (zh) 2002-12-25
EP0762469A1 (de) 1997-03-12
JPH09129172A (ja) 1997-05-16
DE69626732T2 (de) 2004-02-05
KR970013019A (ko) 1997-03-29
US5633506A (en) 1997-05-27
CA2181076C (en) 2002-06-25
KR100292084B1 (ko) 2001-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee