DE69612807T2 - Verfahren zum Abstimmen der Spülgasanlage eines zylindrischen Reaktors - Google Patents

Verfahren zum Abstimmen der Spülgasanlage eines zylindrischen Reaktors

Info

Publication number
DE69612807T2
DE69612807T2 DE69612807T DE69612807T DE69612807T2 DE 69612807 T2 DE69612807 T2 DE 69612807T2 DE 69612807 T DE69612807 T DE 69612807T DE 69612807 T DE69612807 T DE 69612807T DE 69612807 T2 DE69612807 T2 DE 69612807T2
Authority
DE
Germany
Prior art keywords
tuning
purge gas
gas system
cylindrical reactor
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69612807T
Other languages
English (en)
Other versions
DE69612807D1 (de
Inventor
Thomas Martin Hanley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69612807D1 publication Critical patent/DE69612807D1/de
Publication of DE69612807T2 publication Critical patent/DE69612807T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69612807T 1995-09-20 1996-09-13 Verfahren zum Abstimmen der Spülgasanlage eines zylindrischen Reaktors Expired - Fee Related DE69612807T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/530,612 US5908504A (en) 1995-09-20 1995-09-20 Method for tuning barrel reactor purge system

Publications (2)

Publication Number Publication Date
DE69612807D1 DE69612807D1 (de) 2001-06-21
DE69612807T2 true DE69612807T2 (de) 2001-08-30

Family

ID=24114279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69612807T Expired - Fee Related DE69612807T2 (de) 1995-09-20 1996-09-13 Verfahren zum Abstimmen der Spülgasanlage eines zylindrischen Reaktors

Country Status (8)

Country Link
US (1) US5908504A (de)
EP (1) EP0764726B1 (de)
JP (1) JPH09129564A (de)
CN (1) CN1152627A (de)
DE (1) DE69612807T2 (de)
MY (1) MY132166A (de)
SG (1) SG50762A1 (de)
TW (1) TW464954B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914050A (en) * 1997-09-22 1999-06-22 Applied Materials, Inc. Purged lower liner
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
CN1332421C (zh) * 2003-12-26 2007-08-15 南美特科技股份有限公司 半导体制程设备的清洁方法
GB2439948B (en) * 2006-07-12 2010-11-24 Boc Group Plc Gas supply apparatus
CN103173736B (zh) * 2013-03-18 2018-01-12 广东世创金属科技股份有限公司 用于真空涂层设备的多功能节流真空管道结构及其控制系统
JP7151420B2 (ja) * 2018-11-27 2022-10-12 東京エレクトロン株式会社 ガス供給装置及びガス供給方法
FI4013905T3 (fi) 2019-08-12 2023-05-19 Kurt J Lesker Company Erittäin puhtaat olosuhteet atomimittakaavan prosessointiin

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
US4728389A (en) * 1985-05-20 1988-03-01 Applied Materials, Inc. Particulate-free epitaxial process
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
US4928626A (en) * 1989-05-19 1990-05-29 Applied Materials, Inc. Reactant gas injection for IC processing
US5227708A (en) * 1989-10-20 1993-07-13 Applied Materials, Inc. Two-axis magnetically coupled robot
US5352636A (en) * 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5298107A (en) * 1992-02-27 1994-03-29 Applied Materials, Inc. Processing method for growing thick films
JP2825172B2 (ja) * 1992-07-10 1998-11-18 東京エレクトロン株式会社 減圧処理装置および減圧処理方法
US5316794A (en) * 1992-12-11 1994-05-31 Applied Materials, Inc. Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5332443A (en) * 1993-06-09 1994-07-26 Applied Materials, Inc. Lift fingers for substrate processing apparatus
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
JP3553204B2 (ja) * 1995-04-28 2004-08-11 アネルバ株式会社 Ｃｖｄ装置

Also Published As

Publication number Publication date
JPH09129564A (ja) 1997-05-16
EP0764726A1 (de) 1997-03-26
EP0764726B1 (de) 2001-05-16
SG50762A1 (en) 1998-07-20
MY132166A (en) 2007-09-28
US5908504A (en) 1999-06-01
TW464954B (en) 2001-11-21
DE69612807D1 (de) 2001-06-21
CN1152627A (zh) 1997-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee