DE69611409D1 - Integriertes optoelektronisches Bauelement - Google Patents
Integriertes optoelektronisches BauelementInfo
- Publication number
- DE69611409D1 DE69611409D1 DE69611409T DE69611409T DE69611409D1 DE 69611409 D1 DE69611409 D1 DE 69611409D1 DE 69611409 T DE69611409 T DE 69611409T DE 69611409 T DE69611409 T DE 69611409T DE 69611409 D1 DE69611409 D1 DE 69611409D1
- Authority
- DE
- Germany
- Prior art keywords
- optoelectronic component
- integrated optoelectronic
- integrated
- component
- optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2507—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion
- H04B10/2572—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion due to forms of polarisation-dependent distortion other than PMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9509541A FR2737582B1 (fr) | 1995-08-04 | 1995-08-04 | Composant opto-electronique integre |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69611409D1 true DE69611409D1 (de) | 2001-02-08 |
DE69611409T2 DE69611409T2 (de) | 2001-08-23 |
Family
ID=9481735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69611409T Expired - Fee Related DE69611409T2 (de) | 1995-08-04 | 1996-08-01 | Integriertes optoelektronisches Bauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US5652812A (de) |
EP (1) | EP0762576B1 (de) |
JP (1) | JPH09121072A (de) |
DE (1) | DE69611409T2 (de) |
FR (1) | FR2737582B1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2784200B1 (fr) * | 1998-10-05 | 2002-08-30 | Cit Alcatel | Composant monolithique electro-optique multi-sections |
JP3329764B2 (ja) * | 1999-05-13 | 2002-09-30 | 日本電気株式会社 | 半導体レーザー及び半導体光増幅器 |
FR2798010B1 (fr) * | 1999-08-31 | 2003-02-07 | Cit Alcatel | Composant electro-optique multi-sections |
US6375364B1 (en) * | 2000-01-06 | 2002-04-23 | Corning Lasertron, Inc. | Back facet flared ridge for pump laser |
US6600764B1 (en) * | 2000-01-20 | 2003-07-29 | Trump Photonics Inc. | High power single mode semiconductor laser |
US6963597B2 (en) * | 2000-04-28 | 2005-11-08 | Photodigm, Inc. | Grating-outcoupled surface-emitting lasers |
DE60028366T2 (de) | 2000-07-11 | 2006-10-12 | Corning Incorporated | Optischer Verstärker mit verstellbarer stabilisierter Verstärkung |
US6717964B2 (en) * | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
US6690694B2 (en) * | 2001-11-08 | 2004-02-10 | Intel Corporation | Thermally wavelength tunable lasers |
KR100420950B1 (ko) * | 2001-12-12 | 2004-03-02 | 한국전자통신연구원 | 파장 가변 레이저 광원 |
JP3985159B2 (ja) | 2003-03-14 | 2007-10-03 | 日本電気株式会社 | 利得クランプ型半導体光増幅器 |
KR100566187B1 (ko) * | 2003-08-20 | 2006-03-29 | 삼성전자주식회사 | 수평방향 레이징 구조를 갖는 이득 고정 반도체 광증폭기및 그제조방법 |
DE102005018336A1 (de) * | 2005-02-28 | 2006-08-31 | Osram Opto Semiconductors Gmbh | Lichtleiter |
JP2017050318A (ja) * | 2015-08-31 | 2017-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102016115723A1 (de) * | 2016-08-24 | 2018-03-01 | Forschungsverbund Berlin E.V. | Wellenleiterstruktur und optisches System mit Wellenleiterstruktur |
US11837838B1 (en) * | 2020-01-31 | 2023-12-05 | Freedom Photonics Llc | Laser having tapered region |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0346651A (ja) * | 1989-07-15 | 1991-02-27 | Konica Corp | ハロゲン化銀写真感光材料 |
JPH0357288A (ja) * | 1989-07-17 | 1991-03-12 | Siemens Ag | 半導体レーザーを有するデバイスおよびその使用方法 |
US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
US5537432A (en) * | 1993-01-07 | 1996-07-16 | Sdl, Inc. | Wavelength-stabilized, high power semiconductor laser |
-
1995
- 1995-08-04 FR FR9509541A patent/FR2737582B1/fr not_active Expired - Fee Related
-
1996
- 1996-08-01 DE DE69611409T patent/DE69611409T2/de not_active Expired - Fee Related
- 1996-08-01 EP EP96401716A patent/EP0762576B1/de not_active Expired - Lifetime
- 1996-08-02 JP JP8204955A patent/JPH09121072A/ja active Pending
- 1996-08-02 US US08/691,327 patent/US5652812A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0762576A1 (de) | 1997-03-12 |
US5652812A (en) | 1997-07-29 |
FR2737582B1 (fr) | 1997-08-29 |
DE69611409T2 (de) | 2001-08-23 |
EP0762576B1 (de) | 2001-01-03 |
JPH09121072A (ja) | 1997-05-06 |
FR2737582A1 (fr) | 1997-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE59609374D1 (de) | Optoelektronisches halbleiter-bauelement | |
DE59812835D1 (de) | Optoelektronisches bauelement | |
DE69620350D1 (de) | Optoelektronische Quantumwell-Vorrichtung | |
DE69824173D1 (de) | Optisches bauelement | |
DE59509361D1 (de) | Optisches Bauelement | |
DE59300600D1 (de) | Integriertes optisches bauelement. | |
DE59801130D1 (de) | Optoelektronisches halbleiterbauelement | |
DE69636741D1 (de) | Bleichkatalysatorteilchen | |
BR9609939A (pt) | Despropagador adaptável | |
DE69735409D1 (de) | Optoelektronische halbleiteranordnung | |
DE69636651D1 (de) | Batteriezustandsprüfgerät | |
DE69617145D1 (de) | Umlenkbeschlagstruktur | |
DE69633042D1 (de) | Geräuschdämmendes bauteil | |
DE69611409D1 (de) | Integriertes optoelektronisches Bauelement | |
DE59610292D1 (de) | Optoelektronische Sende-Empfangs-Vorrichtung | |
BR9606213A (pt) | Colocação de componentes | |
DE69801283D1 (de) | Optisches Halbleiterbauelement | |
DE69408555D1 (de) | Optoelektronische integrierte Schaltung | |
DE69624334D1 (de) | Fixiervorrichtung | |
DE59807557D1 (de) | Optoelektronisches halbleiterbauelement | |
BR9503130A (pt) | Dispositivo optoeletrônico | |
DE59806815D1 (de) | Optoelektronische vorrichtung | |
DE69634826D1 (de) | Radblockieranlage | |
DK0766380T3 (da) | Integreret mikrobølge-silicium-komponent | |
NO960809D0 (no) | Optoelektronisk kamera |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AVANEX CORP., FREMONT, CALIF., US |
|
8339 | Ceased/non-payment of the annual fee |