DE69611409D1 - Integriertes optoelektronisches Bauelement - Google Patents

Integriertes optoelektronisches Bauelement

Info

Publication number
DE69611409D1
DE69611409D1 DE69611409T DE69611409T DE69611409D1 DE 69611409 D1 DE69611409 D1 DE 69611409D1 DE 69611409 T DE69611409 T DE 69611409T DE 69611409 T DE69611409 T DE 69611409T DE 69611409 D1 DE69611409 D1 DE 69611409D1
Authority
DE
Germany
Prior art keywords
optoelectronic component
integrated optoelectronic
integrated
component
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69611409T
Other languages
English (en)
Other versions
DE69611409T2 (de
Inventor
Salim Gurib
Joel Jaquet
Christine Labourie
Elisabeth Gaumont-Goarin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA filed Critical Alcatel SA
Publication of DE69611409D1 publication Critical patent/DE69611409D1/de
Application granted granted Critical
Publication of DE69611409T2 publication Critical patent/DE69611409T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H04B10/2507—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion
    • H04B10/2572—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion due to forms of polarisation-dependent distortion other than PMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
DE69611409T 1995-08-04 1996-08-01 Integriertes optoelektronisches Bauelement Expired - Fee Related DE69611409T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9509541A FR2737582B1 (fr) 1995-08-04 1995-08-04 Composant opto-electronique integre

Publications (2)

Publication Number Publication Date
DE69611409D1 true DE69611409D1 (de) 2001-02-08
DE69611409T2 DE69611409T2 (de) 2001-08-23

Family

ID=9481735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611409T Expired - Fee Related DE69611409T2 (de) 1995-08-04 1996-08-01 Integriertes optoelektronisches Bauelement

Country Status (5)

Country Link
US (1) US5652812A (de)
EP (1) EP0762576B1 (de)
JP (1) JPH09121072A (de)
DE (1) DE69611409T2 (de)
FR (1) FR2737582B1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2784200B1 (fr) * 1998-10-05 2002-08-30 Cit Alcatel Composant monolithique electro-optique multi-sections
JP3329764B2 (ja) * 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器
FR2798010B1 (fr) * 1999-08-31 2003-02-07 Cit Alcatel Composant electro-optique multi-sections
US6375364B1 (en) * 2000-01-06 2002-04-23 Corning Lasertron, Inc. Back facet flared ridge for pump laser
US6600764B1 (en) * 2000-01-20 2003-07-29 Trump Photonics Inc. High power single mode semiconductor laser
US6963597B2 (en) * 2000-04-28 2005-11-08 Photodigm, Inc. Grating-outcoupled surface-emitting lasers
DE60028366T2 (de) 2000-07-11 2006-10-12 Corning Incorporated Optischer Verstärker mit verstellbarer stabilisierter Verstärkung
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US6690694B2 (en) * 2001-11-08 2004-02-10 Intel Corporation Thermally wavelength tunable lasers
KR100420950B1 (ko) * 2001-12-12 2004-03-02 한국전자통신연구원 파장 가변 레이저 광원
JP3985159B2 (ja) 2003-03-14 2007-10-03 日本電気株式会社 利得クランプ型半導体光増幅器
KR100566187B1 (ko) * 2003-08-20 2006-03-29 삼성전자주식회사 수평방향 레이징 구조를 갖는 이득 고정 반도체 광증폭기및 그제조방법
DE102005018336A1 (de) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Lichtleiter
JP2017050318A (ja) * 2015-08-31 2017-03-09 ルネサスエレクトロニクス株式会社 半導体装置
DE102016115723A1 (de) * 2016-08-24 2018-03-01 Forschungsverbund Berlin E.V. Wellenleiterstruktur und optisches System mit Wellenleiterstruktur
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346651A (ja) * 1989-07-15 1991-02-27 Konica Corp ハロゲン化銀写真感光材料
JPH0357288A (ja) * 1989-07-17 1991-03-12 Siemens Ag 半導体レーザーを有するデバイスおよびその使用方法
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser

Also Published As

Publication number Publication date
EP0762576A1 (de) 1997-03-12
US5652812A (en) 1997-07-29
FR2737582B1 (fr) 1997-08-29
DE69611409T2 (de) 2001-08-23
EP0762576B1 (de) 2001-01-03
JPH09121072A (ja) 1997-05-06
FR2737582A1 (fr) 1997-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee