DE69605821T2 - Lösemittelsystem für positiv-arbeitende photoresiste - Google Patents

Lösemittelsystem für positiv-arbeitende photoresiste

Info

Publication number
DE69605821T2
DE69605821T2 DE69605821T DE69605821T DE69605821T2 DE 69605821 T2 DE69605821 T2 DE 69605821T2 DE 69605821 T DE69605821 T DE 69605821T DE 69605821 T DE69605821 T DE 69605821T DE 69605821 T2 DE69605821 T2 DE 69605821T2
Authority
DE
Germany
Prior art keywords
photorisists
solvent system
positive working
positive
working
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605821T
Other languages
English (en)
Other versions
DE69605821D1 (de
Inventor
Stanley Wanat
M Rahman
Dinesh Khanna
Daniel Aubin
Sunit Dixit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69605821D1 publication Critical patent/DE69605821D1/de
Publication of DE69605821T2 publication Critical patent/DE69605821T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69605821T 1995-12-21 1996-12-17 Lösemittelsystem für positiv-arbeitende photoresiste Expired - Fee Related DE69605821T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/576,748 US5853947A (en) 1995-12-21 1995-12-21 Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
PCT/US1996/019953 WO1997023808A2 (en) 1995-12-21 1996-12-17 A mixed solvent system for positive photoresists

Publications (2)

Publication Number Publication Date
DE69605821D1 DE69605821D1 (de) 2000-01-27
DE69605821T2 true DE69605821T2 (de) 2000-07-27

Family

ID=24305834

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605821T Expired - Fee Related DE69605821T2 (de) 1995-12-21 1996-12-17 Lösemittelsystem für positiv-arbeitende photoresiste

Country Status (8)

Country Link
US (1) US5853947A (de)
EP (1) EP0868684B1 (de)
JP (1) JP3765582B2 (de)
KR (1) KR100483762B1 (de)
CN (1) CN1094208C (de)
DE (1) DE69605821T2 (de)
TW (1) TW412664B (de)
WO (1) WO1997023808A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6099798A (en) 1997-10-31 2000-08-08 Nanogram Corp. Ultraviolet light block and photocatalytic materials
JP2000081700A (ja) * 1998-07-02 2000-03-21 Nippon Zeon Co Ltd パタ―ン形成方法
KR100594815B1 (ko) * 1999-12-24 2006-07-03 삼성전자주식회사 포토레지스트 린스용 씬너 및 이를 이용한 포토레지스트막의 처리 방법
JP4209297B2 (ja) * 2003-10-06 2009-01-14 東京応化工業株式会社 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法
DE102013103723B4 (de) * 2013-04-12 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Bauteils
CN107918249A (zh) * 2016-10-05 2018-04-17 罗门哈斯电子材料韩国有限公司 感光性树脂组合物和由其制备的固化膜
CN110441989B (zh) * 2019-08-07 2022-08-23 沧州信联化工有限公司 一种光刻胶组合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE938233C (de) * 1953-03-11 1956-01-26 Kalle & Co Ag Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
BE539175A (de) * 1954-08-20
NL247405A (de) * 1959-01-15
NL255348A (de) * 1959-08-29
US3201329A (en) * 1963-06-10 1965-08-17 Burt And Redman Carbonizing process and apparatus
US3802885A (en) * 1967-08-15 1974-04-09 Algraphy Ltd Photosensitive lithographic naphthoquinone diazide printing plate with aluminum base
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US3785825A (en) * 1971-07-19 1974-01-15 Polychrome Corp Light-sensitive quinone diazide compounds,compositions,and presensitized lithographic plate
GB1375461A (de) * 1972-05-05 1974-11-27
JPS5280022A (en) * 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
US4173470A (en) * 1977-11-09 1979-11-06 Bell Telephone Laboratories, Incorporated Novolak photoresist composition and preparation thereof
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
US5066561A (en) * 1984-06-11 1991-11-19 Hoechst Celanese Corporation Method for producing and using a positive photoresist with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
JPH083630B2 (ja) * 1986-01-23 1996-01-17 富士写真フイルム株式会社 感光性組成物
DE3780387T2 (de) * 1986-09-18 1993-01-28 Japan Synthetic Rubber Co Ltd Herstellungsverfahren einer integrierten schaltung.
JPH049852A (ja) * 1990-04-27 1992-01-14 Sumitomo Chem Co Ltd ポジ型レジスト組成物

Also Published As

Publication number Publication date
KR100483762B1 (ko) 2005-09-15
KR19990072215A (ko) 1999-09-27
CN1205783A (zh) 1999-01-20
DE69605821D1 (de) 2000-01-27
EP0868684A2 (de) 1998-10-07
US5853947A (en) 1998-12-29
EP0868684B1 (de) 1999-12-22
WO1997023808A3 (en) 1997-08-07
WO1997023808A2 (en) 1997-07-03
TW412664B (en) 2000-11-21
CN1094208C (zh) 2002-11-13
JP2000502467A (ja) 2000-02-29
JP3765582B2 (ja) 2006-04-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee