DE69604688D1 - Schnelle spannungserhöhungschaltung mit drei zuständen - Google Patents

Schnelle spannungserhöhungschaltung mit drei zuständen

Info

Publication number
DE69604688D1
DE69604688D1 DE69604688T DE69604688T DE69604688D1 DE 69604688 D1 DE69604688 D1 DE 69604688D1 DE 69604688 T DE69604688 T DE 69604688T DE 69604688 T DE69604688 T DE 69604688T DE 69604688 D1 DE69604688 D1 DE 69604688D1
Authority
DE
Germany
Prior art keywords
states
pressure boost
fast pressure
fast
boost
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604688T
Other languages
English (en)
Other versions
DE69604688T2 (de
Inventor
Lee Cleveland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69604688D1 publication Critical patent/DE69604688D1/de
Application granted granted Critical
Publication of DE69604688T2 publication Critical patent/DE69604688T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
DE69604688T 1995-11-17 1996-07-23 Schnelle spannungserhöhungschaltung mit drei zuständen Expired - Fee Related DE69604688T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/560,459 US5708387A (en) 1995-11-17 1995-11-17 Fast 3-state booster-circuit
PCT/US1996/012125 WO1997019510A1 (en) 1995-11-17 1996-07-23 A fast 3-state booster circuit

Publications (2)

Publication Number Publication Date
DE69604688D1 true DE69604688D1 (de) 1999-11-18
DE69604688T2 DE69604688T2 (de) 2000-06-08

Family

ID=24237916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604688T Expired - Fee Related DE69604688T2 (de) 1995-11-17 1996-07-23 Schnelle spannungserhöhungschaltung mit drei zuständen

Country Status (5)

Country Link
US (1) US5708387A (de)
EP (1) EP0861517B1 (de)
DE (1) DE69604688T2 (de)
TW (1) TW281766B (de)
WO (1) WO1997019510A1 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69518826T2 (de) * 1995-04-14 2001-02-22 St Microelectronics Srl Spannungserhöhungsschaltung zur Erzeugung eines annähernd konstanten Spannungspegels
US5920225A (en) * 1995-12-20 1999-07-06 Hyundai Electronic Industries, Co., Ltd. Negative voltage drive circuit
JP3117128B2 (ja) * 1997-01-31 2000-12-11 日本電気株式会社 基準電圧発生回路
JPH10289574A (ja) * 1997-04-10 1998-10-27 Fujitsu Ltd 電圧発生回路を有した半導体装置
EP1151365B1 (de) * 1998-11-18 2004-05-12 Macronix International Co., Ltd. Schnelle spannungserzeugung auf dem chip für integrierte schaltungen niedriger leistung
WO2000038303A1 (de) * 1998-12-21 2000-06-29 Infineon Technologies Ag Vorrichtung zur spannungsvervielfachung mit hohem wirkungsgrad und ihre verwendung
CN1181492C (zh) * 1999-02-02 2004-12-22 旺宏电子股份有限公司 改进的字线升压电路
US6493276B2 (en) 1999-02-02 2002-12-10 Macronix International Co., Ltd. Word line boost circuit
US6125055A (en) * 1999-10-19 2000-09-26 Advanced Micro Devices, Inc. Sector write protect CAMS for a simultaneous operation flash memory
US6327181B1 (en) 1999-10-19 2001-12-04 Advanced Micro Devices Inc. Reference cell bitline path architecture for a simultaneous operation flash memory device
US6359808B1 (en) 1999-10-19 2002-03-19 Advanced Micro Devices, Inc. Low voltage read cascode for 2V/3V and different bank combinations without metal options for a simultaneous operation flash memory device
US6571307B1 (en) 1999-10-19 2003-05-27 Advanced Micro Devices, Inc. Multiple purpose bus for a simultaneous operation flash memory device
US6163478A (en) 1999-10-19 2000-12-19 Advanced Micro Devices, Inc. Common flash interface implementation for a simultaneous operation flash memory device
US6111787A (en) 1999-10-19 2000-08-29 Advanced Micro Devices, Inc. Address transistion detect timing architecture for a simultaneous operation flash memory device
US6201753B1 (en) 1999-10-19 2001-03-13 Advanced Micro Devices, Inc. Latching CAM data in a flash memory device
US6259633B1 (en) 1999-10-19 2001-07-10 Advanced Micro Devices, Inc. Sense amplifier architecture for sliding banks for a simultaneous operation flash memory device
US6331950B1 (en) 1999-10-19 2001-12-18 Fujitsu Limited Write protect input implementation for a simultaneous operation flash memory device
US6550028B1 (en) 1999-10-19 2003-04-15 Advanced Micro Devices, Inc. Array VT mode implementation for a simultaneous operation flash memory device
US6285585B1 (en) 1999-10-19 2001-09-04 Advaned Micro Devices, Inc. Output switching implementation for a flash memory device
US6185128B1 (en) 1999-10-19 2001-02-06 Advanced Micro Devices, Inc. Reference cell four-way switch for a simultaneous operation flash memory device
US6118698A (en) * 1999-10-19 2000-09-12 Advanced Micro Devices, Inc. Output multiplexing implementation for a simultaneous operation flash memory device
US6285583B1 (en) 2000-02-17 2001-09-04 Advanced Micro Devices, Inc. High speed sensing to detect write protect state in a flash memory device
US6297993B1 (en) 2000-04-25 2001-10-02 Advanced Micro Devices, Inc. Acceleration voltage implementation for a high density flash memory device
US6353566B1 (en) 2000-04-25 2002-03-05 Advanced Micro Devices System and method for tracking sensing speed by an equalization pulse for a high density flash memory device
US6285627B1 (en) 2000-04-25 2001-09-04 Advanced Micro Devices, Inc. Address transition detector architecture for a high density flash memory device
US6463516B1 (en) 2000-04-25 2002-10-08 Advanced Micro Devices, Inc. Variable sector size for a high density flash memory device
US6327194B1 (en) 2000-04-25 2001-12-04 Advanced Micro Devices, Inc. Precise reference wordline loading compensation for a high density flash memory device
US6407600B1 (en) * 2000-06-27 2002-06-18 Intel Corporation Method and apparatus for providing a start-up control voltage
DE10108980A1 (de) * 2001-02-23 2002-09-12 Koninkl Philips Electronics Nv Anordnung zur Ansteuerung von Anzeigeeinheiten mit adaptiver Startsequenz
US6535446B2 (en) * 2001-05-24 2003-03-18 Ramtron International Corporation Two stage low voltage ferroelectric boost circuit
KR100576924B1 (ko) * 2004-04-20 2006-05-03 주식회사 하이닉스반도체 고전압 발생 회로
US7558116B2 (en) * 2007-08-13 2009-07-07 Spansion Llc Regulation of boost-strap node ramp rate using capacitance to counter parasitic elements in channel
US20100052772A1 (en) * 2008-08-29 2010-03-04 Caleb Yu-Sheng Cho Charge-Recycle Scheme for Charge Pumps
TWI340981B (en) * 2008-11-12 2011-04-21 Ind Tech Res Inst Memory with improved write current
US7924633B2 (en) * 2009-02-20 2011-04-12 International Business Machines Corporation Implementing boosted wordline voltage in memories
JP6444803B2 (ja) * 2015-05-01 2018-12-26 ラピスセミコンダクタ株式会社 書込電圧生成回路及びメモリ装置
US10892021B2 (en) 2018-06-05 2021-01-12 Sandisk Technologies Llc On-die capacitor for a memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580067A (en) * 1982-12-28 1986-04-01 Mostek Corporation MOS dynamic load circuit for switching high voltages and adapted for use with high threshold transistors
DE69327164T2 (de) * 1993-09-30 2000-05-31 St Microelectronics Srl Spannungserhöhungsschaltung zur Erzeugung von positiven und negativen erhöhten Spannungen
DE69312305T2 (de) * 1993-12-28 1998-01-15 Sgs Thomson Microelectronics Spannungsbooster, insbesondere für nichtflüchtige Speicher
JPH08139603A (ja) * 1994-01-05 1996-05-31 Texas Instr Inc <Ti> アナログ・ディジタル変換システム及び同システム内オフセット電圧追跡及び補正方法

Also Published As

Publication number Publication date
EP0861517B1 (de) 1999-10-13
WO1997019510A1 (en) 1997-05-29
TW281766B (en) 1996-07-21
US5708387A (en) 1998-01-13
EP0861517A1 (de) 1998-09-02
DE69604688T2 (de) 2000-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US

8339 Ceased/non-payment of the annual fee