DE69534509D1 - Zweipoliges Bauteil zur Überkopfzündung mit kontrollierter Empfindlichkeit - Google Patents
Zweipoliges Bauteil zur Überkopfzündung mit kontrollierter EmpfindlichkeitInfo
- Publication number
- DE69534509D1 DE69534509D1 DE69534509T DE69534509T DE69534509D1 DE 69534509 D1 DE69534509 D1 DE 69534509D1 DE 69534509 T DE69534509 T DE 69534509T DE 69534509 T DE69534509 T DE 69534509T DE 69534509 D1 DE69534509 D1 DE 69534509D1
- Authority
- DE
- Germany
- Prior art keywords
- ignition device
- overhead over
- controlled sensitivity
- pole overhead
- pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9414415A FR2727571A1 (fr) | 1994-11-25 | 1994-11-25 | Thyristor a sensibilite en retournement controlee |
FR9414415 | 1994-11-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69534509D1 true DE69534509D1 (de) | 2006-02-23 |
DE69534509T2 DE69534509T2 (de) | 2006-07-13 |
Family
ID=9469350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534509T Expired - Fee Related DE69534509T2 (de) | 1994-11-25 | 1995-11-23 | Zweipoliges Bauteil zur Überkopfzündung mit kontrollierter Empfindlichkeit |
Country Status (5)
Country | Link |
---|---|
US (1) | US5861639A (de) |
EP (1) | EP0714139B1 (de) |
JP (1) | JP2813869B2 (de) |
DE (1) | DE69534509T2 (de) |
FR (1) | FR2727571A1 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2751804B1 (fr) * | 1996-07-26 | 1998-10-23 | Sgs Thomson Microelectronics | Alimentation continue haute et basse tension |
FR2781899B1 (fr) * | 1998-07-30 | 2000-10-06 | St Microelectronics Sa | Generateur de courant constant |
DE19947028A1 (de) * | 1999-09-30 | 2001-04-12 | Siemens Ag | Thyristor mit Spannungsstoßbelastbarkeit in der Freiwerdezeit |
FR2803140B1 (fr) * | 1999-12-24 | 2002-05-31 | St Microelectronics Sa | Generateur analogique d'impulsions de tension |
US6333664B1 (en) * | 2000-08-22 | 2001-12-25 | Agere Systems Guardian Corp. | Low operating power, high voltage ringing switch circuit |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
GB0123323D0 (en) * | 2001-09-28 | 2001-11-21 | Power Innovations Ltd | Ignitor circuit PNPN device |
FR2834128B1 (fr) * | 2001-12-21 | 2005-03-04 | St Microelectronics Sa | Dispositif de protection bidirectionnel a faible capacite |
EP1860993B1 (de) * | 2005-03-01 | 2019-01-23 | Masimo Laboratories, Inc. | Nichtinvasiver multiparameter-patientenmonitor |
DE102005037573B4 (de) * | 2005-08-09 | 2007-05-31 | Infineon Technologies Ag | Thyristor mit Freiwerdeschutz in Form eines Thyristorsystems und Verfahren zur Herstellung des Thyristorsystems |
DE102006000903B4 (de) * | 2006-01-05 | 2010-12-09 | Infineon Technologies Ag | Thyristor mit Zündstufenstruktur, Verfahren zu seiner Herstellung und Thyristorsystem mit einem derartigen Thyristor |
US8212327B2 (en) * | 2008-03-06 | 2012-07-03 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US20120146172A1 (en) | 2010-06-18 | 2012-06-14 | Sionyx, Inc. | High Speed Photosensitive Devices and Associated Methods |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2014525091A (ja) | 2011-07-13 | 2014-09-25 | サイオニクス、インク. | 生体撮像装置および関連方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
US9633998B2 (en) * | 2012-09-13 | 2017-04-25 | General Electric Company | Semiconductor device and method for making the same |
JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジcmos画像センサおよび関連づけられた方法 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US8835975B1 (en) | 2013-05-10 | 2014-09-16 | Ixys Corporation | Ultra-fast breakover diode |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
EP2863432A1 (de) | 2013-10-21 | 2015-04-22 | Nxp B.V. | Schutzvorrichtung gegen elektrostatischen Entladungen (ESD) |
US9742394B2 (en) * | 2014-06-16 | 2017-08-22 | National Technology & Engineering Solutions Of Sandia, Llc | High-voltage, high-current, solid-state closing switch |
CN109979935A (zh) * | 2017-12-28 | 2019-07-05 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
DE102018114375A1 (de) * | 2018-06-15 | 2019-12-19 | Infineon Technologies Ag | Leistungselektronikanordnung |
JP6937281B2 (ja) * | 2018-09-14 | 2021-09-22 | 株式会社東芝 | 半導体装置 |
JP7068211B2 (ja) * | 2019-02-15 | 2022-05-16 | 株式会社東芝 | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5210085A (en) * | 1975-07-15 | 1977-01-26 | Hitachi Ltd | Semiconductor device |
US4217504A (en) * | 1975-08-04 | 1980-08-12 | Licentia-Patent Verwaltungs Gmbh | Semiconductor switch with thyristors |
DE2534703C3 (de) * | 1975-08-04 | 1980-03-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
GB1566540A (en) * | 1977-12-14 | 1980-04-30 | Cutler Hammer World Trade Inc | Amplified gate thyristor |
JPS6048911B2 (ja) * | 1979-09-10 | 1985-10-30 | 富士電機株式会社 | 半導体装置 |
JPS5655068A (en) * | 1979-10-11 | 1981-05-15 | Hitachi Ltd | Thyristor |
FR2471048A1 (fr) * | 1979-12-07 | 1981-06-12 | Silicium Semiconducteur Ssc | Structure et procede de montage d'un composant semi-conducteur principal et d'un circuit auxiliaire |
JPS5681970A (en) * | 1979-12-07 | 1981-07-04 | Mitsubishi Electric Corp | Semiconductor switching device |
GB2069255B (en) * | 1980-02-05 | 1983-12-14 | Williams B W | Thyristor circuit |
JPS59217366A (ja) * | 1983-05-26 | 1984-12-07 | Toshiba Corp | 半導体装置 |
-
1994
- 1994-11-25 FR FR9414415A patent/FR2727571A1/fr active Granted
-
1995
- 1995-11-23 EP EP95410131A patent/EP0714139B1/de not_active Expired - Lifetime
- 1995-11-23 DE DE69534509T patent/DE69534509T2/de not_active Expired - Fee Related
- 1995-11-24 JP JP7305685A patent/JP2813869B2/ja not_active Expired - Fee Related
-
1997
- 1997-06-23 US US08/880,856 patent/US5861639A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0714139B1 (de) | 2005-10-12 |
JPH08255895A (ja) | 1996-10-01 |
FR2727571B1 (de) | 1997-02-28 |
JP2813869B2 (ja) | 1998-10-22 |
US5861639A (en) | 1999-01-19 |
FR2727571A1 (fr) | 1996-05-31 |
EP0714139A1 (de) | 1996-05-29 |
DE69534509T2 (de) | 2006-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |