DE69533014D1 - Muster-Übertragungsverfahren mittels eines Ladungsträgerstrahls - Google Patents

Muster-Übertragungsverfahren mittels eines Ladungsträgerstrahls

Info

Publication number
DE69533014D1
DE69533014D1 DE69533014T DE69533014T DE69533014D1 DE 69533014 D1 DE69533014 D1 DE 69533014D1 DE 69533014 T DE69533014 T DE 69533014T DE 69533014 T DE69533014 T DE 69533014T DE 69533014 D1 DE69533014 D1 DE 69533014D1
Authority
DE
Germany
Prior art keywords
transmission method
charge carrier
carrier beam
pattern transmission
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69533014T
Other languages
English (en)
Inventor
Teruaki Okino
Mamoru Nakasuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of DE69533014D1 publication Critical patent/DE69533014D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DE69533014T 1994-06-16 1995-06-16 Muster-Übertragungsverfahren mittels eines Ladungsträgerstrahls Expired - Lifetime DE69533014D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13412294 1994-06-16
JP14324694 1994-06-24

Publications (1)

Publication Number Publication Date
DE69533014D1 true DE69533014D1 (de) 2004-06-17

Family

ID=26468310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69533014T Expired - Lifetime DE69533014D1 (de) 1994-06-16 1995-06-16 Muster-Übertragungsverfahren mittels eines Ladungsträgerstrahls

Country Status (3)

Country Link
US (1) US5624774A (de)
EP (3) EP0688036B1 (de)
DE (1) DE69533014D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965327A (en) * 1991-12-03 1999-10-12 Asahi Kogaku Kogyo Kaisha Method for manufacturing a master die for a diffusion plate and diffusion manufactured by said method
JP3940824B2 (ja) * 1995-08-14 2007-07-04 株式会社ニコン 荷電粒子線によるパターン転写方法および転写装置
US5798194A (en) * 1996-05-22 1998-08-25 Nikon Corporation Masks for charged-particle beam microlithography
JP2785811B2 (ja) * 1996-06-27 1998-08-13 日本電気株式会社 電子線露光装置用露光マスクデータの作成方法および電子線露光装置用マスク
US6225637B1 (en) * 1996-10-25 2001-05-01 Canon Kabushiki Kaisha Electron beam exposure apparatus
JPH1126372A (ja) * 1997-07-08 1999-01-29 Nikon Corp 縮小転写方法及び縮小転写用マスク
US6222197B1 (en) 1997-08-21 2001-04-24 Nikon Corporation Charged-particle-beam pattern-transfer methods and apparatus
JP3087843B2 (ja) * 1997-12-26 2000-09-11 日本電気株式会社 電子線直接描画方法および装置ならびに記録媒体
EP1091383A3 (de) * 1999-10-07 2005-01-19 Lucent Technologies Inc. Elektronenstrahl-Abbildungsgerät
US6528934B1 (en) 2000-05-30 2003-03-04 Chunghwa Picture Tubes Ltd. Beam forming region for electron gun

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593923A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 電子ビ−ム露光方法
JP2706099B2 (ja) * 1988-09-06 1998-01-28 富士通株式会社 半導体装置の製造方法
EP0364929B1 (de) * 1988-10-20 1995-09-06 Fujitsu Limited Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
US5258246A (en) * 1989-08-07 1993-11-02 At&T Bell Laboratories Device manufacture involving lithographic processing
JPH0744145B2 (ja) * 1989-12-12 1995-05-15 株式会社東芝 電子ビーム露光方法及びその装置
US5227269A (en) * 1990-06-22 1993-07-13 Texas Instruments Incorporated Method for fabricating high density DRAM reticles
JP3105580B2 (ja) * 1991-07-29 2000-11-06 富士通株式会社 荷電粒子線描画用マスク作成方法及びマスク
US5260151A (en) * 1991-12-30 1993-11-09 At&T Bell Laboratories Device manufacture involving step-and-scan delineation
JPH05267142A (ja) * 1992-03-17 1993-10-15 Hitachi Ltd 電子線描画装置
US5189306A (en) * 1992-03-24 1993-02-23 International Business Machines Corporation Grey-splice algorithm for electron beam lithography post-processor
US5279925A (en) * 1992-12-16 1994-01-18 At&T Bell Laboratories Projection electron lithographic procedure

Also Published As

Publication number Publication date
EP0949654A3 (de) 2001-01-31
US5624774A (en) 1997-04-29
EP0949655A2 (de) 1999-10-13
EP0949654A2 (de) 1999-10-13
EP0688036A2 (de) 1995-12-20
EP0949655A3 (de) 2001-04-04
EP0688036B1 (de) 2004-05-12
EP0688036A3 (de) 1997-11-26

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Legal Events

Date Code Title Description
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