DE69531823D1 - Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelgsicherungsschatung - Google Patents

Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelgsicherungsschatung

Info

Publication number
DE69531823D1
DE69531823D1 DE69531823T DE69531823T DE69531823D1 DE 69531823 D1 DE69531823 D1 DE 69531823D1 DE 69531823 T DE69531823 T DE 69531823T DE 69531823 T DE69531823 T DE 69531823T DE 69531823 D1 DE69531823 D1 DE 69531823D1
Authority
DE
Germany
Prior art keywords
output
latch circuit
fuse
asymmetrical
interlock circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69531823T
Other languages
English (en)
Other versions
DE69531823T2 (de
Inventor
Luigi Pascucci
Paolo Rolandi
Antonio Barcella
Marco Fontana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69531823D1 publication Critical patent/DE69531823D1/de
Application granted granted Critical
Publication of DE69531823T2 publication Critical patent/DE69531823T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
DE69531823T 1995-07-28 1995-07-28 Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelzsicherungsschatung Expired - Fee Related DE69531823T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830337A EP0756379B1 (de) 1995-07-28 1995-07-28 Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelgsicherungsschatung

Publications (2)

Publication Number Publication Date
DE69531823D1 true DE69531823D1 (de) 2003-10-30
DE69531823T2 DE69531823T2 (de) 2004-07-01

Family

ID=8221984

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69531823T Expired - Fee Related DE69531823T2 (de) 1995-07-28 1995-07-28 Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelzsicherungsschatung

Country Status (3)

Country Link
US (1) US5659498A (de)
EP (1) EP0756379B1 (de)
DE (1) DE69531823T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9600384D0 (en) 1996-01-09 1996-03-13 Nyfotek As Dna glycosylases
IT1286037B1 (it) * 1996-10-25 1998-07-07 Sgs Thomson Microelectronics Circuito per la abilitazione selettiva di una pluralita' di alternative circuitali di un circuito integrato
US6185126B1 (en) * 1997-03-03 2001-02-06 Cypress Semiconductor Corporation Self-initializing RAM-based programmable device
US6525955B1 (en) 2001-12-18 2003-02-25 Broadcom Corporation Memory cell with fuse element
US6693819B2 (en) 2002-01-08 2004-02-17 Broadcom Corporation High voltage switch circuitry
US7145370B2 (en) 2003-09-05 2006-12-05 Impinj, Inc. High-voltage switches in single-well CMOS processes
US7242614B2 (en) 2004-03-30 2007-07-10 Impinj, Inc. Rewriteable electronic fuses
US7177182B2 (en) 2004-03-30 2007-02-13 Impinj, Inc. Rewriteable electronic fuses
US7388420B2 (en) 2004-03-30 2008-06-17 Impinj, Inc. Rewriteable electronic fuses
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US7257033B2 (en) 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765002A (en) * 1971-04-20 1973-10-09 Siemens Ag Accelerated bit-line discharge of a mosfet memory
JPS5939833B2 (ja) * 1977-05-24 1984-09-26 日本電気株式会社 センス増幅器
US4669063A (en) * 1982-12-30 1987-05-26 Thomson Components-Mostek Corp. Sense amplifier for a dynamic RAM
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
JPS62232796A (ja) * 1986-04-01 1987-10-13 Toshiba Corp 半導体記憶装置
EP0365733B1 (de) * 1988-10-28 1994-01-05 International Business Machines Corporation Reprogrammierbare logische Sicherung für logische Anordnungen, basierend auf einer 6-Elementen-SRAM-Zelle
EP0650257A2 (de) * 1988-12-16 1995-04-26 Advanced Micro Devices, Inc. Initialisierungsschaltung
US5294819A (en) * 1992-11-25 1994-03-15 Information Storage Devices Single-transistor cell EEPROM array for analog or digital storage

Also Published As

Publication number Publication date
EP0756379B1 (de) 2003-09-24
US5659498A (en) 1997-08-19
DE69531823T2 (de) 2004-07-01
EP0756379A1 (de) 1997-01-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee