DE69528502D1 - Statischer Induktionthyristor und Verfahren zur Herstellung - Google Patents

Statischer Induktionthyristor und Verfahren zur Herstellung

Info

Publication number
DE69528502D1
DE69528502D1 DE69528502T DE69528502T DE69528502D1 DE 69528502 D1 DE69528502 D1 DE 69528502D1 DE 69528502 T DE69528502 T DE 69528502T DE 69528502 T DE69528502 T DE 69528502T DE 69528502 D1 DE69528502 D1 DE 69528502D1
Authority
DE
Germany
Prior art keywords
manufacture
static induction
induction thyristor
thyristor
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69528502T
Other languages
English (en)
Other versions
DE69528502T2 (de
Inventor
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE69528502D1 publication Critical patent/DE69528502D1/de
Publication of DE69528502T2 publication Critical patent/DE69528502T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
DE69528502T 1994-09-05 1995-07-11 Statischer Induktionthyristor und Verfahren zur Herstellung Expired - Fee Related DE69528502T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21100894A JP3214987B2 (ja) 1994-09-05 1994-09-05 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69528502D1 true DE69528502D1 (de) 2002-11-14
DE69528502T2 DE69528502T2 (de) 2003-06-26

Family

ID=16598811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528502T Expired - Fee Related DE69528502T2 (de) 1994-09-05 1995-07-11 Statischer Induktionthyristor und Verfahren zur Herstellung

Country Status (4)

Country Link
US (2) US5602405A (de)
EP (1) EP0700079B1 (de)
JP (1) JP3214987B2 (de)
DE (1) DE69528502T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855978A (ja) * 1994-06-09 1996-02-27 Ngk Insulators Ltd 半導体装置およびその製造方法
JP3277075B2 (ja) * 1994-09-07 2002-04-22 日本碍子株式会社 半導体装置およびその製造方法
US5841155A (en) * 1995-02-08 1998-11-24 Ngk Insulators, Ltd. Semiconductor device containing two joined substrates
DE19804192A1 (de) * 1998-02-03 1999-08-12 Siemens Ag Verfahren zur Herstellung eines Leistungshalbleiterbauelementes
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch
JP3957038B2 (ja) * 2000-11-28 2007-08-08 シャープ株式会社 半導体基板及びその作製方法
US20030119278A1 (en) * 2001-12-20 2003-06-26 Mckinnell James C. Substrates bonded with oxide affinity agent and bonding method
US6887768B1 (en) * 2003-05-15 2005-05-03 Lovoltech, Inc. Method and structure for composite trench fill
KR100510821B1 (ko) * 2003-06-09 2005-08-30 한국전자통신연구원 미세 구조물이 형성된 기판과 그 기판의 제조방법
US7087472B2 (en) * 2003-07-18 2006-08-08 Semiconductor Components Industries, L.L.C. Method of making a vertical compound semiconductor field effect transistor device
US20150099358A1 (en) * 2013-10-07 2015-04-09 Win Semiconductors Corp. Method for forming through wafer vias in semiconductor devices

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1467354A (en) * 1974-05-10 1977-03-16 Gen Electric Power transistor
US4198645A (en) * 1976-01-27 1980-04-15 Semiconductor Research Foundation Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
JPS6019150B2 (ja) * 1979-10-05 1985-05-14 株式会社日立製作所 半導体装置の製造方法
JPS579226A (en) * 1980-06-19 1982-01-18 Ricoh Kk Safety device for capacitor
JPS5792262A (en) * 1980-11-29 1982-06-08 Matsushita Electric Works Ltd Storage box hanging construction of underfloor storage
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
JPS5917547A (ja) * 1982-07-20 1984-01-28 Shimadzu Corp Ｘ線透視撮影台
CH655103A5 (de) * 1983-03-11 1986-03-27 Sandoz Ag Azolderivate, verfahren zu ihrer herstellung und ihre verwendung.
JPS605064A (ja) * 1983-06-20 1985-01-11 株式会社東芝 窒化系セラミツクス成形用バインダ
JPS6050642A (ja) * 1983-08-31 1985-03-20 Toshiba Corp 光情報記録用媒体の製造方法
US4654679A (en) * 1983-10-05 1987-03-31 Toyo Denki Seizo Kabushiki Kaisha Static induction thyristor with stepped-doping gate region
DE3586735D1 (de) * 1984-10-19 1992-11-12 Bbc Brown Boveri & Cie Abschaltbares leistungshalbleiterbauelement.
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
JPH01261872A (ja) * 1988-04-12 1989-10-18 Yokogawa Electric Corp 半導体圧力センサの製造方法
JPS6426187A (en) * 1988-07-08 1989-01-27 Hitachi Ltd Core structure of nuclear reactor
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
JP2801127B2 (ja) * 1993-07-28 1998-09-21 日本碍子株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0700079B1 (de) 2002-10-09
JP3214987B2 (ja) 2001-10-02
US5602405A (en) 1997-02-11
DE69528502T2 (de) 2003-06-26
EP0700079A2 (de) 1996-03-06
US5702962A (en) 1997-12-30
JPH0878660A (ja) 1996-03-22
EP0700079A3 (de) 1996-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee