DE69525311D1 - Photovervielfacher - Google Patents

Photovervielfacher

Info

Publication number
DE69525311D1
DE69525311D1 DE69525311T DE69525311T DE69525311D1 DE 69525311 D1 DE69525311 D1 DE 69525311D1 DE 69525311 T DE69525311 T DE 69525311T DE 69525311 T DE69525311 T DE 69525311T DE 69525311 D1 DE69525311 D1 DE 69525311D1
Authority
DE
Germany
Prior art keywords
photomultiplier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525311T
Other languages
English (en)
Other versions
DE69525311T2 (de
Inventor
Motohiro Suyama
Masaharu Muramatsu
Makoto Oishi
Yoshitaka Ishikawa
Koei Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Application granted granted Critical
Publication of DE69525311D1 publication Critical patent/DE69525311D1/de
Publication of DE69525311T2 publication Critical patent/DE69525311T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/12—Anode arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE69525311T 1994-11-24 1995-11-14 Photovervielfacher Expired - Fee Related DE69525311T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6290070A JPH08148113A (ja) 1994-11-24 1994-11-24 光電子増倍管

Publications (2)

Publication Number Publication Date
DE69525311D1 true DE69525311D1 (de) 2002-03-21
DE69525311T2 DE69525311T2 (de) 2003-02-13

Family

ID=17751406

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525311T Expired - Fee Related DE69525311T2 (de) 1994-11-24 1995-11-14 Photovervielfacher

Country Status (4)

Country Link
US (1) US5654536A (de)
EP (1) EP0714117B1 (de)
JP (1) JPH08148113A (de)
DE (1) DE69525311T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3618013B2 (ja) * 1995-07-20 2005-02-09 浜松ホトニクス株式会社 光電子増倍管
JPH09297055A (ja) * 1996-05-02 1997-11-18 Hamamatsu Photonics Kk 電子管
US6297489B1 (en) 1996-05-02 2001-10-02 Hamamatsu Photonics K.K. Electron tube having a photoelectron confining mechanism
US5874728A (en) * 1996-05-02 1999-02-23 Hamamatsu Photonics K.K. Electron tube having a photoelectron confining mechanism
US5883466A (en) * 1996-07-16 1999-03-16 Hamamatsu Photonics K.K. Electron tube
US6198221B1 (en) 1996-07-16 2001-03-06 Hamamatsu Photonics K.K. Electron tube
JP3728352B2 (ja) * 1996-07-16 2005-12-21 浜松ホトニクス株式会社 電子管
DE69904881T2 (de) * 1998-07-01 2003-10-30 Asml Netherlands Bv Projektionsbelichtungsgerät
US6166365A (en) * 1998-07-16 2000-12-26 Schlumberger Technology Corporation Photodetector and method for manufacturing it
JP4040789B2 (ja) 1999-03-26 2008-01-30 浜松ホトニクス株式会社 光計測装置、シンチレーションカウンタ、パーティクルカウンタ、光計測方法、シンチレーション計数方法及び粒子計数方法
US6294414B1 (en) * 2000-05-04 2001-09-25 Agere Systems Guardian Corp. Method of fabricating heterointerface devices having diffused junctions
WO2002027284A1 (fr) 2000-09-25 2002-04-04 Hamamatsu Photonics K.K. Appareil et procede de mesure optique
JP4471609B2 (ja) 2003-09-10 2010-06-02 浜松ホトニクス株式会社 電子管
JP4471610B2 (ja) 2003-09-10 2010-06-02 浜松ホトニクス株式会社 電子管
US7176429B2 (en) 2003-09-10 2007-02-13 Hamamatsu Photonics K.K. Electron tube
JP4471608B2 (ja) 2003-09-10 2010-06-02 浜松ホトニクス株式会社 電子管
JP4424950B2 (ja) 2003-09-10 2010-03-03 浜松ホトニクス株式会社 電子線検出装置及び電子管
JP4593238B2 (ja) * 2004-10-29 2010-12-08 浜松ホトニクス株式会社 光電子増倍管及び放射線検出装置
US20070176160A1 (en) * 2006-01-27 2007-08-02 Hamamatsu Photonics K.K. Electron tube
US7667399B2 (en) * 2007-04-26 2010-02-23 The United States Of America As Represented By The Secretary Of The Navy Large area hybrid photomultiplier tube
US7687992B2 (en) * 2007-04-26 2010-03-30 The United States Of America As Represented By The Secretary Of The Navy Gating large area hybrid photomultiplier tube
DE102012009780A1 (de) * 2012-05-18 2013-11-21 Leica Microsystems Cms Gmbh Verfahren und Vorrichtung zum Untersuchen einer Probe
CN108428761B (zh) * 2018-03-19 2019-12-06 西北核技术研究所 基于SiC宽禁带半导体探测器的光电探测器
CN113512470A (zh) * 2021-03-31 2021-10-19 杭州安誉科技有限公司 光电倍增管用光电阴极及其制备方法
CN116504866B (zh) * 2023-06-29 2023-09-08 北京邮电大学 高时间分辨率单光子探测器及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5035793B1 (de) * 1970-09-11 1975-11-19
JPS5054290A (de) * 1973-09-11 1975-05-13
US4326211A (en) * 1977-09-01 1982-04-20 U.S. Philips Corporation N+PP-PP-P+ Avalanche photodiode
JPS5710987A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp Silicon avalanche photo diode
US5146296A (en) 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron
JPH0727762B2 (ja) * 1989-12-01 1995-03-29 浜松ホトニクス株式会社 ストリーク管
FR2666448B1 (fr) * 1990-09-04 1992-10-16 Thomson Tubes Electroniques Tube intensificateur d'image a isolation electrique optimisee.
US5120949A (en) * 1991-01-17 1992-06-09 Burle Technologies, Inc. Semiconductor anode photomultiplier tube
US5311044A (en) * 1992-06-02 1994-05-10 Advanced Photonix, Inc. Avalanche photomultiplier tube
JP3441101B2 (ja) * 1993-02-12 2003-08-25 浜松ホトニクス株式会社 電子管
JP3413241B2 (ja) * 1993-05-07 2003-06-03 浜松ホトニクス株式会社 電子管

Also Published As

Publication number Publication date
US5654536A (en) 1997-08-05
JPH08148113A (ja) 1996-06-07
DE69525311T2 (de) 2003-02-13
EP0714117A3 (de) 1998-03-04
EP0714117B1 (de) 2002-02-06
EP0714117A2 (de) 1996-05-29

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee