DE69524539T2 - Gehäuse mit einer leitfähigen Kappe und einem leitfähigen Substrat, enthaltend ein elektrisches Bauelement - Google Patents

Gehäuse mit einer leitfähigen Kappe und einem leitfähigen Substrat, enthaltend ein elektrisches Bauelement

Info

Publication number
DE69524539T2
DE69524539T2 DE69524539T DE69524539T DE69524539T2 DE 69524539 T2 DE69524539 T2 DE 69524539T2 DE 69524539 T DE69524539 T DE 69524539T DE 69524539 T DE69524539 T DE 69524539T DE 69524539 T2 DE69524539 T2 DE 69524539T2
Authority
DE
Germany
Prior art keywords
conductive
housing
electrical component
cap
conductive substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524539T
Other languages
English (en)
Other versions
DE69524539D1 (de
Inventor
Ljubisa Ristic
Daniel Koury
John E Schmiesing
Ronald J Gutteridge
Henry G Hughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69524539D1 publication Critical patent/DE69524539D1/de
Application granted granted Critical
Publication of DE69524539T2 publication Critical patent/DE69524539T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
DE69524539T 1994-10-27 1995-10-23 Gehäuse mit einer leitfähigen Kappe und einem leitfähigen Substrat, enthaltend ein elektrisches Bauelement Expired - Fee Related DE69524539T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/329,927 US5545912A (en) 1994-10-27 1994-10-27 Electronic device enclosure including a conductive cap and substrate

Publications (2)

Publication Number Publication Date
DE69524539D1 DE69524539D1 (de) 2002-01-24
DE69524539T2 true DE69524539T2 (de) 2002-07-04

Family

ID=23287618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524539T Expired - Fee Related DE69524539T2 (de) 1994-10-27 1995-10-23 Gehäuse mit einer leitfähigen Kappe und einem leitfähigen Substrat, enthaltend ein elektrisches Bauelement

Country Status (5)

Country Link
US (1) US5545912A (de)
EP (1) EP0709682B1 (de)
JP (1) JPH08136577A (de)
KR (1) KR100351574B1 (de)
DE (1) DE69524539T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7533570B2 (en) 2005-09-20 2009-05-19 Mitsubishi Denki Kabushiki Kaisha Electrostatic-capacitance-type acceleration sensor

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DE19537814B4 (de) * 1995-10-11 2009-11-19 Robert Bosch Gmbh Sensor und Verfahren zur Herstellung eines Sensors
US5644167A (en) * 1996-03-01 1997-07-01 National Semiconductor Corporation Integrated circuit package assemblies including an electrostatic discharge interposer
JP3278363B2 (ja) * 1996-11-18 2002-04-30 三菱電機株式会社 半導体加速度センサ
JP3455092B2 (ja) * 1997-10-27 2003-10-06 株式会社新川 半導体装置及びワイヤボンディング方法
JP4124867B2 (ja) * 1998-07-14 2008-07-23 松下電器産業株式会社 変換装置
US6534340B1 (en) 1998-11-18 2003-03-18 Analog Devices, Inc. Cover cap for semiconductor wafer devices
US6218687B1 (en) * 1998-12-21 2001-04-17 General Atomics Smart microsensor arrays with silicon-on-insulator readouts for damage control
US6514789B2 (en) 1999-10-26 2003-02-04 Motorola, Inc. Component and method for manufacture
US7434305B2 (en) 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
US7166910B2 (en) * 2000-11-28 2007-01-23 Knowles Electronics Llc Miniature silicon condenser microphone
US7439616B2 (en) * 2000-11-28 2008-10-21 Knowles Electronics, Llc Miniature silicon condenser microphone
US8617934B1 (en) 2000-11-28 2013-12-31 Knowles Electronics, Llc Methods of manufacture of top port multi-part surface mount silicon condenser microphone packages
JP2003240797A (ja) * 2002-02-18 2003-08-27 Mitsubishi Electric Corp 半導体加速度センサ
JP2005038911A (ja) * 2003-07-16 2005-02-10 Mitsubishi Electric Corp 半導体装置
US7030469B2 (en) * 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
US7237797B2 (en) * 2003-10-24 2007-07-03 Visteon Global Technologies, Inc. Instrument panel having modular airbag door assembly
DE10350460B4 (de) * 2003-10-29 2006-07-13 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von mikromechanische und/ oder mikroelektronische Strukturen aufweisenden Halbleiterbauelementen, die durch das feste Verbinden von mindestens zwei Halbleiterscheiben entstehen, und entsprechende Anordnung
US7034393B2 (en) * 2003-12-15 2006-04-25 Analog Devices, Inc. Semiconductor assembly with conductive rim and method of producing the same
US20050170609A1 (en) * 2003-12-15 2005-08-04 Alie Susan A. Conductive bond for through-wafer interconnect
US7608534B2 (en) * 2004-06-02 2009-10-27 Analog Devices, Inc. Interconnection of through-wafer vias using bridge structures
US20060037398A1 (en) * 2004-08-19 2006-02-23 Rich David B Method for making an impact detector
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005008511B4 (de) 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
JP4552783B2 (ja) * 2005-07-06 2010-09-29 株式会社デンソー 半導体センサ
DE102005053765B4 (de) 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
DE102005053767B4 (de) 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
US7180019B1 (en) 2006-06-26 2007-02-20 Temic Automotive Of North America, Inc. Capacitive accelerometer or acceleration switch
US7528468B2 (en) * 2006-09-25 2009-05-05 Freescale Semiconductor, Inc. Capacitor assembly with shielded connections and method for forming the same
US20080087979A1 (en) * 2006-10-13 2008-04-17 Analog Devices, Inc. Integrated Circuit with Back Side Conductive Paths
US8307674B2 (en) * 2008-07-16 2012-11-13 Ferro Corporation Hot-melt sealing glass compositions and methods of making and using the same
WO2010016094A1 (ja) * 2008-08-06 2010-02-11 パイオニア株式会社 静電容量検出型センサ
WO2012103087A1 (en) * 2011-01-24 2012-08-02 Analog Devices, Inc. Packaged microphone with reduced parasitics
US9364669B2 (en) * 2011-01-25 2016-06-14 The Board Of Regents Of The University Of Texas System Automated method of classifying and suppressing noise in hearing devices
CN103999484B (zh) 2011-11-04 2017-06-30 美商楼氏电子有限公司 作为声学设备中的屏障的嵌入式电介质和制造方法
US9078063B2 (en) 2012-08-10 2015-07-07 Knowles Electronics, Llc Microphone assembly with barrier to prevent contaminant infiltration
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement
US9794661B2 (en) 2015-08-07 2017-10-17 Knowles Electronics, Llc Ingress protection for reducing particle infiltration into acoustic chamber of a MEMS microphone package
JP2019039885A (ja) * 2017-08-29 2019-03-14 セイコーエプソン株式会社 物理量センサー、複合センサー、慣性計測ユニット、携帯型電子機器、電子機器、および移動体

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US3417626A (en) * 1965-05-25 1968-12-24 Gen Precision Inc Single-axis accelerometer
US4102202A (en) * 1976-11-26 1978-07-25 The Singer Company Electrostatic accelerometer
US5216490A (en) * 1988-01-13 1993-06-01 Charles Stark Draper Laboratory, Inc. Bridge electrodes for microelectromechanical devices
JPH088330B2 (ja) * 1989-07-19 1996-01-29 日本電気株式会社 Ｌｏｃ型リードフレームを備えた半導体集積回路装置
US5115291A (en) * 1989-07-27 1992-05-19 Honeywell Inc. Electrostatic silicon accelerometer
US5146389A (en) * 1991-07-22 1992-09-08 Motorola, Inc. Differential capacitor structure and method
FR2687777B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur capacitif a faible capacite parasite et procede de fabrication.
US5347867A (en) * 1993-02-03 1994-09-20 Minnetonka Warehouse Supply, Inc Accelerometer incorporating a driven shield

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7533570B2 (en) 2005-09-20 2009-05-19 Mitsubishi Denki Kabushiki Kaisha Electrostatic-capacitance-type acceleration sensor
DE102006025373B4 (de) * 2005-09-20 2013-06-20 Mitsubishi Denki K.K. Elektrostatischer Kapazitätsbeschleunigungssensor

Also Published As

Publication number Publication date
US5545912A (en) 1996-08-13
EP0709682A1 (de) 1996-05-01
KR100351574B1 (ko) 2003-01-06
JPH08136577A (ja) 1996-05-31
DE69524539D1 (de) 2002-01-24
KR960015866A (ko) 1996-05-22
EP0709682B1 (de) 2001-12-12

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee