DE69523196D1 - Feldeffekttransistor mit einem Kondensator zwischen Source- und Drain-Elektroden - Google Patents
Feldeffekttransistor mit einem Kondensator zwischen Source- und Drain-ElektrodenInfo
- Publication number
- DE69523196D1 DE69523196D1 DE69523196T DE69523196T DE69523196D1 DE 69523196 D1 DE69523196 D1 DE 69523196D1 DE 69523196 T DE69523196 T DE 69523196T DE 69523196 T DE69523196 T DE 69523196T DE 69523196 D1 DE69523196 D1 DE 69523196D1
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- source
- field effect
- effect transistor
- drain electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6030672A JP2786104B2 (ja) | 1994-02-28 | 1994-02-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69523196D1 true DE69523196D1 (de) | 2001-11-22 |
DE69523196T2 DE69523196T2 (de) | 2002-07-04 |
Family
ID=12310221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69523196T Expired - Fee Related DE69523196T2 (de) | 1994-02-28 | 1995-02-27 | Feldeffekttransistor mit einem Kondensator zwischen Source- und Drain-Elektroden |
Country Status (4)
Country | Link |
---|---|
US (1) | US5650645A (de) |
EP (1) | EP0670602B1 (de) |
JP (1) | JP2786104B2 (de) |
DE (1) | DE69523196T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL1002783C2 (nl) * | 1996-04-03 | 1997-10-06 | Microtronic Nederland Bv | Geïntegreerde microfoon/versterker-eenheid, en versterkermodule daarvoor. |
US6420747B2 (en) | 1999-02-10 | 2002-07-16 | International Business Machines Corporation | MOSCAP design for improved reliability |
DE60011349T2 (de) | 1999-07-08 | 2005-06-16 | Matsushita Electric Industrial Co., Ltd., Kadoma | Kondensator-mikrofongerät und Verbindungsvorrichtung |
US6614088B1 (en) * | 2000-02-18 | 2003-09-02 | James D. Beasom | Breakdown improvement method and sturcture for lateral DMOS device |
US6747307B1 (en) * | 2000-04-04 | 2004-06-08 | Koninklijke Philips Electronics N.V. | Combined transistor-capacitor structure in deep sub-micron CMOS for power amplifiers |
JP2003230195A (ja) | 2002-02-06 | 2003-08-15 | Hosiden Corp | エレクトレットコンデンサマイクロホン |
US7149317B2 (en) | 2002-04-18 | 2006-12-12 | Sonionmicrotronic Nederland B.V. | CMOS high impedance circuit |
EP1623601A1 (de) * | 2003-04-28 | 2006-02-08 | Knowles Electronics, LLC | Verfahren und gerät zur wesentlichen verbesserung der störunterdrückung der stromversorgung in einer miniaturisierten mikrofonbaugruppe |
US8338923B1 (en) * | 2011-09-02 | 2012-12-25 | GEM Weltronics TWN Corporation | Package structure of multi-layer array type LED device |
CN103165671B (zh) * | 2011-12-12 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | Mos器件及其制备方法 |
US9679893B2 (en) * | 2015-05-15 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and transistor |
WO2017191699A1 (ja) | 2016-05-06 | 2017-11-09 | ソニー株式会社 | 情報処理装置、情報処理方法、プログラム及び情報処理システム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3492511A (en) * | 1966-12-22 | 1970-01-27 | Texas Instruments Inc | High input impedance circuit for a field effect transistor including capacitive gate biasing means |
JPS57114287A (en) * | 1981-01-08 | 1982-07-16 | Toshiba Corp | Semiconductor device |
JPS59129909A (ja) * | 1983-01-13 | 1984-07-26 | Seiko Epson Corp | 微分回路 |
US5202751A (en) * | 1984-03-30 | 1993-04-13 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit |
NL8800846A (nl) * | 1988-04-05 | 1989-11-01 | Philips Nv | Geintegreerde schakeling met een programmeerbare cel. |
US4981973A (en) * | 1988-06-30 | 1991-01-01 | Union Carbide Chemicals And Plastics Company, Inc. | Transvinylation reaction |
JPH0256438U (de) * | 1988-10-14 | 1990-04-24 | ||
DE4024728B4 (de) * | 1989-08-03 | 2004-09-30 | Fuji Electric Co., Ltd., Kawasaki | MOS-Halbleitereinrichtung und Verfahren zu ihrer Herstellung |
US4974039A (en) * | 1989-08-14 | 1990-11-27 | Raytheon Company | Field effect transistor having an integrated capacitor |
-
1994
- 1994-02-28 JP JP6030672A patent/JP2786104B2/ja not_active Expired - Fee Related
-
1995
- 1995-02-27 DE DE69523196T patent/DE69523196T2/de not_active Expired - Fee Related
- 1995-02-27 EP EP95102798A patent/EP0670602B1/de not_active Expired - Lifetime
-
1996
- 1996-02-29 US US08/608,945 patent/US5650645A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5650645A (en) | 1997-07-22 |
JPH07240424A (ja) | 1995-09-12 |
EP0670602B1 (de) | 2001-10-17 |
DE69523196T2 (de) | 2002-07-04 |
EP0670602A1 (de) | 1995-09-06 |
JP2786104B2 (ja) | 1998-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |