DE69519703D1 - Verfahren zum Herstellen einer hochkristallinen dünnen Oxidfilms und Beschichtigungsvorrichtung für dieses Verfahren - Google Patents

Verfahren zum Herstellen einer hochkristallinen dünnen Oxidfilms und Beschichtigungsvorrichtung für dieses Verfahren

Info

Publication number
DE69519703D1
DE69519703D1 DE69519703T DE69519703T DE69519703D1 DE 69519703 D1 DE69519703 D1 DE 69519703D1 DE 69519703 T DE69519703 T DE 69519703T DE 69519703 T DE69519703 T DE 69519703T DE 69519703 D1 DE69519703 D1 DE 69519703D1
Authority
DE
Germany
Prior art keywords
producing
oxide film
coating device
thin oxide
highly crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69519703T
Other languages
English (en)
Other versions
DE69519703T2 (de
Inventor
Takao Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69519703D1 publication Critical patent/DE69519703D1/de
Publication of DE69519703T2 publication Critical patent/DE69519703T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/742—Annealing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69519703T 1994-08-26 1995-08-24 Verfahren zum Herstellen einer hochkristallinen dünnen Oxidfilms und Beschichtigungsvorrichtung für dieses Verfahren Expired - Fee Related DE69519703T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6225708A JPH0867968A (ja) 1994-08-26 1994-08-26 酸化物薄膜の作製方法

Publications (2)

Publication Number Publication Date
DE69519703D1 true DE69519703D1 (de) 2001-02-01
DE69519703T2 DE69519703T2 (de) 2001-05-03

Family

ID=16833563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69519703T Expired - Fee Related DE69519703T2 (de) 1994-08-26 1995-08-24 Verfahren zum Herstellen einer hochkristallinen dünnen Oxidfilms und Beschichtigungsvorrichtung für dieses Verfahren

Country Status (5)

Country Link
US (1) US5622918A (de)
EP (1) EP0698932B1 (de)
JP (1) JPH0867968A (de)
CA (1) CA2156992C (de)
DE (1) DE69519703T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897147A (ja) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp エピタキシャル結晶成長装置
US6541079B1 (en) * 1999-10-25 2003-04-01 International Business Machines Corporation Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
DE10061743A1 (de) 2000-01-17 2001-07-19 Siemens Ag Verfahren zur Verbesserung der optischen Trennung von Leuchtstoffschichten
US6582972B1 (en) * 2000-04-07 2003-06-24 Symetrix Corporation Low temperature oxidizing method of making a layered superlattice material
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
FR2840925B1 (fr) * 2002-06-18 2005-04-01 Riber Chambre d'evaporation de materiaux sous vide a pompage differentiel
WO2006071899A2 (en) * 2004-12-23 2006-07-06 Superconductor Technologies, Inc. Rf-properties-optimized compositions of (re)ba2cu3o7-d thin film superconductors
JP2007227086A (ja) * 2006-02-22 2007-09-06 Tokyo Electron Ltd 成膜装置および発光素子の製造方法
CN112126978A (zh) * 2020-09-03 2020-12-25 西安航空学院 一种二次单畴化生长钆钡铜氧超导块材的方法
CN112663013B (zh) * 2020-12-15 2022-12-27 华能新能源股份有限公司 一种真空蒸镀用基片辅助降温系统及工作方法
CN113533397B (zh) * 2021-07-01 2023-04-07 上海大学 一种原位研究二维材料低温晶体结构的装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63241810A (ja) * 1987-03-28 1988-10-07 Sumitomo Electric Ind Ltd 超電導積層材
EP0429536A4 (en) * 1988-08-19 1993-12-15 Regents Of The University Of Minnesota Preparation of superconductive ceramic oxides using ozone
US5004721A (en) * 1988-11-03 1991-04-02 Board Of Regents, The University Of Texas System As-deposited oxide superconductor films on silicon and aluminum oxide
CA2029038C (en) * 1989-10-31 1993-12-14 Keizo Harada Process and system for preparing a superconducting thin film of oxide
JPH04193703A (ja) * 1990-11-27 1992-07-13 Sharp Corp 超電導薄膜の作製方法
CA2093729C (en) * 1992-04-10 2001-01-02 Takao Nakamura Process for preparing superconducting thin film formed of oxide superconductor material
DE69422666T2 (de) * 1993-07-02 2000-07-27 Sumitomo Electric Industries Verfahren zur Herstellung eines hochkristallinen, dünnen SrTiO3 Oxidfilms

Also Published As

Publication number Publication date
US5622918A (en) 1997-04-22
CA2156992C (en) 1999-02-02
DE69519703T2 (de) 2001-05-03
EP0698932A2 (de) 1996-02-28
EP0698932B1 (de) 2000-12-27
CA2156992A1 (en) 1996-02-27
EP0698932A3 (de) 1997-10-22
JPH0867968A (ja) 1996-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee