DE69518682T2 - Kronenetherhaltige Entschichtungsmittel - Google Patents

Kronenetherhaltige Entschichtungsmittel

Info

Publication number
DE69518682T2
DE69518682T2 DE69518682T DE69518682T DE69518682T2 DE 69518682 T2 DE69518682 T2 DE 69518682T2 DE 69518682 T DE69518682 T DE 69518682T DE 69518682 T DE69518682 T DE 69518682T DE 69518682 T2 DE69518682 T2 DE 69518682T2
Authority
DE
Germany
Prior art keywords
group
ligand
ions
organic solvent
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69518682T
Other languages
German (de)
English (en)
Other versions
DE69518682D1 (de
Inventor
Yaw Samuel Obeng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69518682D1 publication Critical patent/DE69518682D1/de
Application granted granted Critical
Publication of DE69518682T2 publication Critical patent/DE69518682T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE69518682T 1994-03-18 1995-03-16 Kronenetherhaltige Entschichtungsmittel Expired - Fee Related DE69518682T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/210,193 US5417802A (en) 1994-03-18 1994-03-18 Integrated circuit manufacturing

Publications (2)

Publication Number Publication Date
DE69518682D1 DE69518682D1 (de) 2000-10-12
DE69518682T2 true DE69518682T2 (de) 2001-02-01

Family

ID=22781941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518682T Expired - Fee Related DE69518682T2 (de) 1994-03-18 1995-03-16 Kronenetherhaltige Entschichtungsmittel

Country Status (8)

Country Link
US (1) US5417802A (https=)
EP (1) EP0674231B1 (https=)
JP (1) JPH07273074A (https=)
KR (1) KR950034566A (https=)
DE (1) DE69518682T2 (https=)
ES (1) ES2150528T3 (https=)
SG (1) SG24106A1 (https=)
TW (1) TW295694B (https=)

Families Citing this family (51)

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US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US6133158A (en) * 1998-01-27 2000-10-17 Lucent Technologies Inc. Process for removing alkali metals from solvents used in the manufacture of semiconductor wafers
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
MY129673A (en) 2000-03-20 2007-04-30 Avantor Performance Mat Inc Method and composition for removing sodium-containing material from microcircuit substrates
EP1303792B1 (en) 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
AU2001277907A1 (en) * 2000-07-17 2002-01-30 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
CN1696826A (zh) * 2000-08-01 2005-11-16 得克萨斯州大学系统董事会 用对激活光透明的模板在衬底上形成图案的方法及半导体器件
EP1390975A2 (en) * 2000-08-21 2004-02-25 The Board Of Regents, The University Of Texas System Flexure based translation stage
KR101031528B1 (ko) * 2000-10-12 2011-04-27 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US20040038840A1 (en) * 2002-04-24 2004-02-26 Shihying Lee Oxalic acid as a semiaqueous cleaning product for copper and dielectrics
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US20080206991A1 (en) * 2007-02-22 2008-08-28 Nadia Rahhal-Orabi Methods of forming transistor contacts and via openings

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562295A (en) * 1968-12-18 1971-02-09 Du Pont Macrocyclic polyether compounds and ionic complexes thereof
US3813309A (en) * 1969-12-23 1974-05-28 Ibm Method for stripping resists from substrates
US3871929A (en) * 1974-01-30 1975-03-18 Allied Chem Polymeric etch resist strippers and method of using same
US3997562A (en) * 1974-10-01 1976-12-14 E. I. Du Pont De Nemours And Company Macrocyclic polyether/nitrile complexes
US4403029A (en) * 1982-09-02 1983-09-06 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
EP0367074A3 (en) * 1988-10-31 1991-06-12 LeaRonal, Inc. Preparing printed circuit boards for electroplating
EP0578507B1 (en) * 1992-07-09 2005-09-28 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

Also Published As

Publication number Publication date
DE69518682D1 (de) 2000-10-12
ES2150528T3 (es) 2000-12-01
US5417802A (en) 1995-05-23
SG24106A1 (en) 1996-02-10
KR950034566A (ko) 1995-12-28
TW295694B (https=) 1997-01-11
EP0674231A1 (en) 1995-09-27
EP0674231B1 (en) 2000-09-06
JPH07273074A (ja) 1995-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee