JPH07273074A - 集積回路製造 - Google Patents

集積回路製造

Info

Publication number
JPH07273074A
JPH07273074A JP7057836A JP5783695A JPH07273074A JP H07273074 A JPH07273074 A JP H07273074A JP 7057836 A JP7057836 A JP 7057836A JP 5783695 A JP5783695 A JP 5783695A JP H07273074 A JPH07273074 A JP H07273074A
Authority
JP
Japan
Prior art keywords
group
ligand
organic solvent
integrated circuit
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7057836A
Other languages
English (en)
Japanese (ja)
Inventor
Yaw S Obeng
サムエル オーベング ヤウ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Corp filed Critical American Telephone and Telegraph Co Inc
Publication of JPH07273074A publication Critical patent/JPH07273074A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP7057836A 1994-03-18 1995-03-17 集積回路製造 Pending JPH07273074A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/210,193 US5417802A (en) 1994-03-18 1994-03-18 Integrated circuit manufacturing
US210193 1994-03-18

Publications (1)

Publication Number Publication Date
JPH07273074A true JPH07273074A (ja) 1995-10-20

Family

ID=22781941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7057836A Pending JPH07273074A (ja) 1994-03-18 1995-03-17 集積回路製造

Country Status (8)

Country Link
US (1) US5417802A (https=)
EP (1) EP0674231B1 (https=)
JP (1) JPH07273074A (https=)
KR (1) KR950034566A (https=)
DE (1) DE69518682T2 (https=)
ES (1) ES2150528T3 (https=)
SG (1) SG24106A1 (https=)
TW (1) TW295694B (https=)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US6133158A (en) * 1998-01-27 2000-10-17 Lucent Technologies Inc. Process for removing alkali metals from solvents used in the manufacture of semiconductor wafers
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
MY129673A (en) 2000-03-20 2007-04-30 Avantor Performance Mat Inc Method and composition for removing sodium-containing material from microcircuit substrates
EP1303792B1 (en) 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
AU2001277907A1 (en) * 2000-07-17 2002-01-30 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
CN1696826A (zh) * 2000-08-01 2005-11-16 得克萨斯州大学系统董事会 用对激活光透明的模板在衬底上形成图案的方法及半导体器件
EP1390975A2 (en) * 2000-08-21 2004-02-25 The Board Of Regents, The University Of Texas System Flexure based translation stage
KR101031528B1 (ko) * 2000-10-12 2011-04-27 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US20040038840A1 (en) * 2002-04-24 2004-02-26 Shihying Lee Oxalic acid as a semiaqueous cleaning product for copper and dielectrics
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US20080206991A1 (en) * 2007-02-22 2008-08-28 Nadia Rahhal-Orabi Methods of forming transistor contacts and via openings

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3562295A (en) * 1968-12-18 1971-02-09 Du Pont Macrocyclic polyether compounds and ionic complexes thereof
US3813309A (en) * 1969-12-23 1974-05-28 Ibm Method for stripping resists from substrates
US3871929A (en) * 1974-01-30 1975-03-18 Allied Chem Polymeric etch resist strippers and method of using same
US3997562A (en) * 1974-10-01 1976-12-14 E. I. Du Pont De Nemours And Company Macrocyclic polyether/nitrile complexes
US4403029A (en) * 1982-09-02 1983-09-06 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
EP0367074A3 (en) * 1988-10-31 1991-06-12 LeaRonal, Inc. Preparing printed circuit boards for electroplating
EP0578507B1 (en) * 1992-07-09 2005-09-28 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials

Also Published As

Publication number Publication date
DE69518682D1 (de) 2000-10-12
ES2150528T3 (es) 2000-12-01
DE69518682T2 (de) 2001-02-01
US5417802A (en) 1995-05-23
SG24106A1 (en) 1996-02-10
KR950034566A (ko) 1995-12-28
TW295694B (https=) 1997-01-11
EP0674231A1 (en) 1995-09-27
EP0674231B1 (en) 2000-09-06

Similar Documents

Publication Publication Date Title
JPH07273074A (ja) 集積回路製造
JP3150306B2 (ja) 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
EP1128222B1 (en) Photoresist stripping composition
US5744402A (en) Method of manufacturing semiconductor devices
US6184134B1 (en) Dry process for cleaning residues/polymers after metal etch
JP2005109492A (ja) 処理室の清掃方法
US6303482B1 (en) Method for cleaning the surface of a semiconductor wafer
JP3876983B2 (ja) 高分子残渣の前洗浄方法
US6162733A (en) Method for removing contaminants from integrated circuits
JP2006135287A (ja) 洗浄液及びそれを用いた半導体素子の洗浄方法
KR20010112355A (ko) 산화물의 에칭이 감소된 잔사의 제거 방법
US6638365B2 (en) Method for obtaining clean silicon surfaces for semiconductor manufacturing
US5876509A (en) Cleaning solution for cleaning semiconductor device and cleaning method using the same
US20050136662A1 (en) Method to remove fluorine residue from bond pads
JP2002299315A (ja) 半導体装置の製造方法
US6500766B2 (en) Post-cleaning method of a via etching process
KR20010031136A (ko) 반도체 기판으로부터 잔류물을 스트리핑하는 조성물을함유하는 붕산 암모늄
CN112863999B (zh) 刻蚀方法
JPH08264399A (ja) 半導体基板の保管方法および半導体装置の製造方法
US6423646B1 (en) Method for removing etch-induced polymer film and damaged silicon layer from a silicon surface
US5990018A (en) Oxide etching process using nitrogen plasma
JP2618545B2 (ja) 半導体集積回路の製造方法
KR970001696B1 (ko) 폴리머 제거를 위한 반도체 소자 제조 방법
KR100234401B1 (ko) 웨이퍼 세정방법
JP4623254B2 (ja) フォトレジスト剥離剤組成物

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20020703